Abstract: A holding strip is used to hold a semiconductor ingot during semiconductor wafer fabrication. The holding strip is formed from a semiconductor material, typically the same material used to form the ingot itself. The holding strip has a holding surface shaped to receive the ingot and at least one surface other than the holding surface, into which at least one notch is formed. The holding strip has a characteristic breaking strength that changes when a cut is formed through the holding surface and into the notch. In some embodiments, the notch has sides that are substantially parallel to each other, and in other embodiments, the notch has tapered sides. In alternative embodiments, the shape of the notch causes an abrupt change or a gradual change in the breaking strength of the holding strip as the cut penetrates into the notch. In either case, the notch can be shaped to cause a gradual change in breaking strength as the cut moves deeper into the notch.

Abstract: A holding unit is provided to support an ingot in a semiconductor wafer sawing machine, which minimizes the instability of a blade during a sawing process. The holding unit is formed from substantially the same material as an ingot resting thereon. The holding unit includes a top surface for receiving an ingot, a bottom surface, a pair of side walls, and a cavity formed in the holding unit. The cavity forms a plurality of break points in the holding unit. When contacted by the blade, the holding unit fractures at the break points to minimize the chipping of the wafer.

Abstract: A method for forming a solid solution alloy crystal includes forming a solid solution alloy crystal having at least the same diameter as a seed crystal. The seed crystal is exposed to a liquid containing a desired concentration of an alloying element to dissolve a portion of the seed crystal. The solid solution alloy crystal is then formed from the liquid. The method allows a large diameter solid solution alloy crystal to be grown in a reduced time or a larger diameter solid solution alloy crystal to be grown in a known fixed total process time.