Abstract: A memory apparatus and methods are provided for preventing read errors on weak pages in a non-volatile memory system. In one example, a method includes identifying a weak page in a non-volatile memory device along a word line, wherein the weak page is partially written with at least some data; buffering data associated with the weak page to a weak page buffer that is coupled in communication with the non-volatile memory device; determining that an amount of data in the weak page buffer has reached a predetermined data level; and writing the data from the weak page buffer into the weak page along the word line in the non-volatile memory device.

Abstract: In one implementation, flash memory chips are provided with an operating power supply voltage to substantially match a power supply voltage expected at an edge connector of a dual inline memory module. The one or more of the flash memory chips and a memory support application integrated circuit (ASIC) may be mounted together into a multi-chip package for integrated circuits. The one or more flash memory chips and the memory support ASIC may be electrically coupled together by routing one or more conductors between each in the multi-chip package. The multi-chip package may be mounted onto a printed circuit board (PCB) of a flash memory DIMM to reduce the number of packages mounted thereto and reduce the height of the flash memory DIMM. The number of printed circuit board layers may also be reduced, such as by integrating address functions into the memory support ASIC.

Abstract: A first portion of an asymmetric memory is configured as temporary storage for application data units with sizes corresponding to a small memory block that is smaller than the size of a logical write unit associated with the asymmetric memory. A portion of the remaining asymmetric memory is configured as a reconciled storage for application data units with varying sizes. A first application data unit is received for writing to the asymmetric memory. Based on computing the size of the first application data unit as corresponding to the small memory block, the first application data unit is written to the temporary storage. Upon determining that a threshold is reached, a memory write operation is performed for writing the application data units from the temporary storage to the reconciled storage. The application data units written to the reconciled storage are removed from the temporary storage.

Abstract: First data is received for storing in a first asymmetric memory device. A first writing phase is identified as a current writing phase. A first segment included in the first asymmetric memory device is identified as next segment available for writing data. The first data is written to the first segment. Information associated with the first segment is stored, along with information indicating that the first segment is written in the first writing phase. Second data is received for storing in the asymmetric memory. A second segment included in the first asymmetric memory device is identified as the next segment available for writing data. The second data is written to the second segment. Information associated with the second segment and the second memory block is stored along with information indicating that the second segment is written in the second writing phase.

Abstract: In one embodiment of the invention, a memory apparatus for improved write performance is disclosed. The memory apparatus includes a base printed circuit board (PCB) having an edge connector for plugging into a host server system; a card level power source to provide card level power during a power failure; a memory controller coupled to the card level power source and having one or more memory channels; and one or more non-volatile memory devices (NVMDs) coupled to the card level power source and organized to respectively couple to the memory channels controlled by the memory controller. Each memory controller provides queuing and scheduling of memory operations on a channel for each NVMD in the memory channels. Responsive to power failure, the memory controller receives card level power and changes the scheduling of memory operations to the NVMDs in each memory channel.

Abstract: Metadata that corresponds to application data is distributed across different disruption regions of an asymmetric memory component such that metadata is written in the same disruption region as the application data to which it corresponds. A first block of application data is written to a first disruption region and a second block of application data is written to a second disruption region. A first block of metadata corresponding to the first block of application data and a second block of metadata corresponding to the second block of application data both are generated. The first block of metadata is written to the first disruption region and the second block of metadata is written to the second disruption region such that the first and second blocks of metadata are written to the same disruption regions as the blocks of application data to which they correspond.

Abstract: An apparatus includes a printed circuit board with a plurality of printed circuit board traces, a memory controller mounted on the printed circuit board coupled to one or more of the plurality of printed circuit board traces, a plurality of non-volatile type of memory integrated circuits coupled to the printed circuit board, and a plurality of support integrated circuits coupled between the memory controller and the plurality of non-volatile type of memory integrated circuits.

Abstract: A memory apparatus and methods are provided for preventing read errors on weak pages in a non-volatile memory system. In one example, a method includes identifying a weak page in a non-volatile memory device along a word line, wherein the weak page is partially written with at least some data; buffering data associated with the weak page to a weak page buffer that is coupled in communication with the non-volatile memory device; determining that an amount of data in the weak page buffer has reached a predetermined data level; and writing the data from the weak page buffer into the weak page along the word line in the non-volatile memory device.