Patents Assigned to Vishay Lite-On Power Semicon Corp.
  • Method for preventing the snap down effect in power rectifier with higher breakdown voltage
    Patent number: 6114193
    Abstract: A method for preventing the snap down effect in a power rectifier with higher breakdown voltage comprises the step of forming an isolation layer between the semiconductor substrate and the epitaxy layer. The isolation layer can prevent the dislocation occurred upon the semiconductor substrate from influencing the p-n junction atop. Therefore, the power rectifier manufactured by the method of the present invention can work under a higher breakdown voltage exceeding 450 V with reduced cost.
    Type: Grant
    Filed: May 5, 1998
    Date of Patent: September 5, 2000
    Assignee: Vishay Lite-On Power Semicon Corp.
    Inventors: Yen Hui Chang, Kuo Wei Chiang