Abstract: A photodetector and method of making the same including a semiconductor and a 2D material. The space charge region is located directly at the surface of the semiconductor. A photon with a small wavelength, once it enters the semiconductor, is immediately inside the space charge region in which an electron-hole pair generated by the photon can contribute to a photocurrent. This makes the photodetector an efficient UV detector. Interdigitated oxide structures between the semiconductor and the 2D material further enhance the sensitivity of the photodetector to, for example, UV light.

Abstract: Devices, methods, and systems for detecting proximity. A first light emitter emits light for a first time period while a light detector is not sensing. A second light emitter emits light for a second time period while the light detector is sensing. In some implementations, the first light emitter directly illuminates the light detector during the first time period, whereas the second light emitter is obstructed from directly illuminating the light detector during the second time period. In some implementations, the first light emitter is obstructed from illuminating a display during the first time period, and the second light emitter is obstructed from directly illuminating the light detector during the second time period. In some implementations, the first light emitter emits the light during the first time period such that the light detector maintains a linear responsivity during the second time period.

Abstract: A chip level package photodiode includes a first conductive layer located at a first side of the chip level package photodiode. A first contact is located at a second side of the chip level package photodiode. A dopant diffusion layer is formed between the first conductive layer and the first contact electrically connecting the first conductive layer to the first contact, the dopant diffusion layer proceeding from the first side of the chip level package photodiode to the second side of the chip level package photodiode completely through a depletion zone of the chip level package photodiode.

Abstract: A photosensitive transistor is disclosed herein that includes: a semiconductor substrate of the first conductivity type as a collector layer; above it a less doped layer of the first conductivity type having regions of different thickness; a semiconductor base layer of the second conductivity type above at least parts of the regions of the less doped layer; and an emitter layer of the first conductivity type above at least parts of the base layer, but not above at least one part of the part of the base layer disposed above the thinner region of the less doped layer.

Abstract: A display device and a method for operating a display device disclosed herein include transmitting a proximity signal from a proximity sensor, the proximity sensor being positioned under a lower surface of a surface layer with an illumination component being positioned between the surface layer and the proximity sensor, in response to the illumination component being deactivated, receiving a reflected proximity signal based on the proximity signal, determining a proximity value based on the reflected proximity signal and modifying an operation of the display device based on the proximity value. The modifying the operation of the display device includes any one or a combination of activating the illumination component, deactivating the illumination component, or modifying a property of the illumination component.

Abstract: Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information; and controlling brightness of the display based on the ambient light level result.

Abstract: Devices, methods, and systems for detecting proximity. A first light emitter emits light for a first time period while a light detector is not sensing. A second light emitter emits light for a second time period while the light detector is sensing. In some implementations, the first light emitter directly illuminates the light detector during the first time period, whereas the second light emitter is obstructed from directly illuminating the light detector during the second time period. In some implementations, the first light emitter is obstructed from illuminating a display during the first time period, and the second light emitter is obstructed from directly illuminating the light detector during the second time period. In some implementations, the first light emitter emits the light during the first time period such that the light detector maintains a linear responsivity during the second time period.

Abstract: Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information; and controlling brightness of the display based on the ambient light level result.

Abstract: A display device and a method for operating a display device disclosed herein include transmitting a proximity signal from a proximity sensor, the proximity sensor being positioned under a lower surface of a surface layer with an illumination component being positioned between the surface layer and the proximity sensor, in response to the illumination component being deactivated, receiving a reflected proximity signal based on the proximity signal, determining a proximity value based on the reflected proximity signal and modifying an operation of the display device based on the proximity value.

Abstract: Techniques for generating an indication of ambient light intensity are provided. The techniques include obtaining a set of one or more low light level measurements during a low light level display panel period of a display; obtaining a set of one or more high light level measurements during a high light level display panel period of the display; and generating an ambient light level result based on analysis of the set of one or more low light level measurements, the set of one or more high light level measurements, and calibration information.

Abstract: Techniques, devices, and systems disclosed herein include detecting a vertical synchronization (VSYNC) signal cycle, determining a high frequency trigger pulse based on detecting an illumination component's pulse width modulation (PWM) signal, the high frequency trigger pulse corresponding to the illumination component's deactivation times, receiving a delay time period and activating a first sensor, at a first time, within the VSYNC signal cycle, the first time determined based on the high frequency trigger pulse and the delay time period. The first sensor may sense a first sensor reading and may be deactivated after being activated. A display setting may be adjusted based at least on the first sensor reading and the illumination component may be activated after the first sensor is deactivated.

Abstract: A photosensitive transistor is disclosed herein that includes: a semiconductor substrate of the first conductivity type as a collector layer; above it a less doped layer of the first conductivity type having regions of different thickness; a semiconductor base layer of the second conductivity type above at least parts of the regions of the less doped layer; and an emitter layer of the first conductivity type above at least parts of the base layer, but not above at least one part of the part of the base layer disposed above the thinner region of the less doped layer.

Abstract: Techniques, devices, and systems disclosed herein include detecting a vertical synchronization (VSYNC) signal cycle, determining a high frequency trigger pulse based on detecting an illumination component's pulse width modulation (PWM) signal, the high frequency trigger pulse corresponding to the illumination component's deactivation times, receiving a delay time period and activating a first sensor, at a first time, within the VSYNC signal cycle, the first time determined based on the high frequency trigger pulse and the delay time period. The first sensor may sense a first sensor reading and may be deactivated after being activated. A display setting may be adjusted based at least on the first sensor reading and the illumination component may be activated after the first sensor is deactivated.

Abstract: An optoelectronic apparatus is provided having a carrier device that has at least one optoelectronic transmitter and/or at least one optoelectronic receiver at an upper side; at least one first optical element, a second optical element, and a third optical element that are arranged in a layer arrangement above the carrier device, with the second optical element being arranged above the first optical element and the third optical element being arranged above the second optical element, and with each of the at least three optical elements comprising a lens element, an aperture element or a filter element; and a holding device that holds at least the first optical element and the second optical element relative to the carrier device and partly surrounds them, with the holding device furthermore either holding the third optical element relative to the carrier device and partly surrounding the third optical element or forming the third optical element.

Abstract: An optoelectronic apparatus is provided, comprising a carrier device that has a longitudinal extent and a transverse extent, wherein the carrier device has a plurality of electrically conductive tracks aligned in parallel with the longitudinal extent, and wherein the carrier device has a plurality of contact chambers aligned in parallel with the transverse extent at an upper side. Each of the contact tracks is electrically contactable in each contact chamber to be able to install at least one optoelectronic transmitter and/or at least one optoelectronic receiver in a variable mounting in the respective chamber.

Abstract: A surface mountable electronic component free of connecting wires comprises a semiconductor substrate, wherein a plurality of solderable connection areas are arranged at the underside of the component. The component comprises at least one recess is formed in the region of the edges bounding the underside; and in that the recess is covered with an insulating layer. A method for the manufacture of such a component comprises the formation of corresponding recesses.

Abstract: An optoelectronic apparatus is provided, comprising a carrier device that has a longitudinal extent and a transverse extent, wherein the carrier device has a plurality of electrically conductive tracks aligned in parallel with the longitudinal extent, and wherein the carrier device has a plurality of contact chambers aligned in parallel with the transverse extent at an upper side. Each of the contact tracks is electrically contactable in each contact chamber to be able to install at least one optoelectronic transmitter and/or at least one optoelectronic receiver in a variable mounting in the respective chamber.

Abstract: An optoelectronic apparatus is provided that has at least one optoelectronic transmitter and at least one optoelectronic receiver. The optoelectronic apparatus furthermore has a storage device having at least one non-volatile memory that is adapted to store an individual data set. A data interface is furthermore provided that is adapted to at least partly read the individual data set out of the non-volatile memory of the storage device.

Abstract: An optoelectronic apparatus is provided having a carrier device that has at least one optoelectronic transmitter and/or at least one optoelectronic receiver at an upper side; having a lens element that is provided above the carrier device and that has at least one lens section for the at least one optoelectronic transmitter and/or for the at least one optoelectronic receiver; and having a holding device that at least partly surrounds the carrier device and the lens element. The lens element has a mechanical coding section that projects out of the holding device and that enables at least one coding element for identifying the optoelectronic apparatus.

Abstract: An optoelectronic apparatus is provided having a carrier device that has at least one optoelectronic transmitter and/or at least one optoelectronic receiver at an upper side; at least one first optical element, a second optical element, and a third optical element that are arranged in a layer arrangement above the carrier device, with the second optical element being arranged above the first optical element and the third optical element being arranged above the second optical element, and with each of the at least three optical elements comprising a lens element, an aperture element or a filter element; and a holding device that holds at least the first optical element and the second optical element relative to the carrier device and partly surrounds them, with the holding device furthermore either holding the third optical element relative to the carrier device and partly surrounding the third optical element or forming the third optical element.