Patents Assigned to Vishay-Silconix
  • Ultra-low drain-source resistance power MOSFET
    Patent number: 8409954
    Abstract: Ultra-low drain-source resistance power MOSFET. In accordance with an embodiment of the preset invention, a semiconductor device comprises a plurality of trench power MOSFETs. The plurality of trench power MOSFETs is formed in a second epitaxial layer. The second epitaxial layer is formed adjacent and contiguous to a first epitaxial layer. The first epitaxial layer is formed adjacent and contiguous to a substrate highly doped with red Phosphorous. The novel red Phosphorous doped substrate enables a desirable low drain-source resistance.
    Type: Grant
    Filed: March 21, 2006
    Date of Patent: April 2, 2013
    Assignee: Vishay-Silconix
    Inventors: The-Tu Chau, Sharon Shi, Qufei Chen, Martin Hernandez, Deva Pattanayak, Kyle Terrill, Kuo-In Chen