Abstract: A semiconductor memory device formed on a semiconductor chip includes first memory arrays, a plurality of second memory arrays, a first voltage generator, and first bonding pads. The semiconductor chip is divided into first, second and third rectangle regions and the third rectangle region is arranged between the first rectangle region and the second rectangle region. The first memory arrays are formed in the first rectangle region. The second memory arrays are formed in the second rectangle region. The voltage generator and first bonding pads are arranged in the third rectangle region. The first bonding pads are arranged between the first rectangle region and the voltage generator and no bonding pads are arranged between the voltage generator and the second memory arrays.

Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

Abstract: A semiconductor memory device, in which peripheral circuits are arranged in a cross area of a semiconductor chip composed of the longitudinal center portions and the transverse center portions, and in which memory arrays are arranged in the four regions which are divided by the cross area. This structure in which the peripheral circuits are arranged at the center portion of the chip permits the longest signal transition paths to be shortened to about one half of the chip size to speed up the DRAM which is intended to have a large storage capacity.

Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel s

Abstract: A semiconductor memory device, in which peripheral circuits are arranged in a cross area of a semiconductor chip composed of the longitudinal center portions and the transverse center portions, and in which memory arrays are arranged in the four regions which are divided by the cross area. A benefit of this structure in which the peripheral circuits are arranged at the center portion of the chip, is that the longest signal transmission paths can be shortened to about one half of the chip size to speed up the DRAM which is intended to have a large storage capacity.

Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel s

Abstract: A nonvolatile storage element of a single-layer gate type structure is arranged so that a floating gate is formed of a conductive layer which partly overlaps with a control gate, formed of a diffused layer, and is provided with a barrier layer covering a part of or the whole surface of the floating gate. Nonvolatile storage elements characterized as such are used for redundancy control of defects or change of functions.

Abstract: A microcomputer MCU adopting the general purpose register method is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding as in the RISC machine having a fixed length instruction format of the prior art, by adopting a fixed length instruction format having a power of 2 but a smaller bit number than that of the maximum data word length fed for instruction execution. And, the control of the coded division is executed by noting the code bits.

Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel s

Abstract: A microcomputer MCU adopting the general purpose register method is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding as in the RISC machine having a fixed length instruction format of the prior art, by adopting a fixed length instruction format having a power of 2 but a smaller bit number than that of the maximum data word length fed for instruction execution. And, the control of the coded division is executed by noting the code bits.

Abstract: A microcomputer CMU adopting the general purpose register method is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding as in the RISC machine having a fixed length instruction format of the prior art, by adopting a fixed length instruction format having a power of 2 but a smaller bit number than that of the maximum data word length fed for instruction execution. And, the control of the coded division is executed by noting the code bits.

Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in those active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions, comprising: the step of for forming a first mask by a non-oxidizable mask and an etching mask sequentially over the principal surface of the active regions of the substrate; the step of forming a second mask on and in self-alignment with the side walls of the first mask by a non-oxidizable mask thinner than the non-oxidizable mask of the first mask and an etching mask respectively; the step of etching the principal surface of the inactive regions of the substrate by using the first mask and the second mask; the step of forming the element separating insulating film over the principal surface of the inactive regions of the substrate by an oxidization using the first mask and the second mask; and the step of forming the channel s

Abstract: Herein disclosed is a microcomputer MCU adopting the general purpose register method. The microcomputer is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding as in the RISC machine having a fixed length instruction format of the prior art, by adopting a fixed length instruction format having a power of 2 but a smaller bit number than that of the maximum data word length fed to instruction execution means. And, the control of the coded division is executed by noting the code bits.

Abstract: Herein disclosed is a semiconductor integrated circuit device fabricating process for forming MISFETs over the principal surface in active regions of a substrate, which are surrounded by inactive regions formed of an element separating insulating film and channel stopper regions. The disclosed process includes forming insulating films over wiring lines including uppermost wiring lines, the uppermost wiring lines having gaps between adjacent uppermost wiring lines. The insulating films include forming a silicon oxide film over the wiring lines and in the gaps between adjacent uppermost wiring lines, and forming a silicon nitride film over the silicon oxide film, the silicon nitride film being formed by plasma chemical vapor deposition. The silicon oxide film is formed to have a thickness of at least one-half of the gap between adjacent uppermost wiring lines, with the silicon nitride film being thicker than the silicon oxide film.

Abstract: A nonvolatile storage element of single-layer gate structure constructed by arranging a floating gate formed of a conductive layer to partly overlap with a control gate formed of a diffused layer is provided with a barrier layer covering a part or the whole of the surface of the floating gate. Such nonvolatile storage elements are used for redundancy control of defects or change of functions.

Abstract: A single chip semiconductor integrated circuit device having a central processing unit (CPU) and a flash memory which stores data to be processed by the CPU and which provides data to the CPU through the data bus in response to accessing instructions from the CPU through the address bus. The flash memory is constituted by a plurality of memory blocks each of which has a plurality of electrically programmable nonvolatile memory cells arranged in rows and columns in which each nonvolatile memory cell is coupled to one of a plurality of word lines and one of a plurality of data lines of the flash memory. The memory blocks formed can be facilitated with different memory capacities, including through controlling the number of rows or columns of memory cells associated therewith.

Abstract: Herein disclosed is a microcomputer MCU adopting the general purpose register method. The microcomputer is enabled to have a small program capacity or a high program memory using efficiency and a low system cost, while enjoying the advantage of simplification of the instruction decoding as in the RISC machine having a fixed length instruction format of the prior art, by adopting a fixed length instruction format having a power of 2 but a smaller bit number than that of the maximum data word length fed to instruction execution means. And, the control of the coded division is executed by noting the code bits.

Abstract: A division method and circuit performs a division for signed data by adding or subtracting a divisor to or from the dividend or the partial remainder from the division, according to the sign of the divisor or the dividend and the partial remainder to acquire a new partial remainder. The division is repeated a predetermined number of times in which a quotient bit is acquired according to the sign of the acquired partial remainder or the divisor. The dividend is corrected by subtracting 1, which is the significance of an LSB of the corresponding dividend, from the dividend when the sign of the dividend is negative, and the corrected dividend is used for the division processing.

Abstract: Ends of inner leads are disposed in the vicinity of a peripheral end of a semiconductor chip and a portion of an insulating film tape is affixed to a main surface of the semiconductor chip by an adhesive while other portions of the insulating film tape are affixed to portions of the inner leads by an adhesive. Electrode pads provided in the main surface of the semiconductor chip are electrically connected to the ends of the corresponding inner leads by bonding wires, and the semiconductor chip, the inner leads, the electrode pads, the insulating film tape and the bonding wires are sealed by a resin molding. The thickness of the insulating film tape is smaller than a height from the main surface of the semiconductor chip to an apex of the bonding wire. Surfaces of the ends of the inner leads connected to the bonding wires are positioned lower than the main surface of the semiconductor chip and the inner leads are positioned between the main surface and an opposite surface of the semiconductor chip.

Abstract: One object of the present invention is to provide the reduced projection exposure method which enables the exposure of various and fine patterns in manufacturing process of semiconductor devices or semiconductor integrated circuit devices. Structure of the present invention to attain the above object is to carry out the reduced projection exposure using a phase shift mask provided with a prescribed correction pattern on the end of the mask pattern domain of a constant mode or the boundary of the mask pattern domain of plural modes. According to this structure, as the end effects etc. are canceled by the correction pattern, the various and fine patterns can be exposed.