Patents Assigned to VLSI Limited - Justia Patents Search

Patents Assigned to VLSI Limited

Method for fabricating a semiconductor device including a step for forming an amorphous silicon layer followed by a crystallization thereof

Patent number: 5843829

Abstract: A method for fabricating a semiconductor device includes the steps of depositing an amorphous silicon layer on a substrate, and forming an oxidation film on a surface of the amorphous silicon layer by treating the surface of the amorphous silicon layer with an oxidation gas. The forming step occurs before crystallization of the amorphous silicon layer.

Type: Grant

Filed: November 17, 1995

Date of Patent: December 1, 1998

Assignees: Fujitsu Limited, VLSI Limited

Inventors: Masaki Kuramae, Fumitake Mieno