Abstract: An aligner structure comprises: a first alignment unit (100) for sequentially and firstly aligning the substrate (S) and the mask (M) by the first relative displacement between the substrate (S) and the mask (M); and a second alignment unit (200) for sequentially and secondarily aligning the substrate (S) and the mask (M) by the second relative displacement between the substrate (S) and the mask (M) after the first alignment by the first alignment unit (100). The displacement scale of the second relative displacement is smaller than the displacement scale of the first relative displacement so that the substrate (S) and the mask (M) can be quickly and precisely aligned by performing the first relative displacement between the substrate (S) and the mask (M) with a relatively small displacement scale after finishing the first relative displacement between the substrate (S) and the mask (M) with a relatively large displacement scale.

Abstract: An atomic layer deposition apparatus and an atomic layer deposition system, capable of reducing space for installing the apparatus and significantly improving production speed by forming a thin film on a surface of each of a plurality of rectangular substrates by rotating the substrates with respect to a gas spray portion, with the substrates being supported by one substrate support portion. The atomic layer deposition apparatus includes: a vacuum chamber; a gas supply portion, which is provided above or below the vacuum chamber, and which supplies gas so that a thin film is deposited on a surface of each of substrates; and a substrate support portion, which is provided in the vacuum chamber so as to horizontally rotate about the gas supply portion, and which supports the two or more rectangular substrates arranged in the circumferential direction with respect to the center of rotation of the substrate support portion.