Abstract: The objective of the present invention is to provide a web substrate treating system that allows a web substrate to be wound around, or unwound from, a roller in a direction perpendicular to the ground to prevent particles, arcing, and the like. The present invention provides a web substrate treating system comprising: a loading roller (100) around which a web substrate (W) to be treated is wound; at least one rotary drum (200) that rotates to convey the web substrate (W) unwound from the loading roller (100) while supporting the web substrate (W); an unloading roller (300) around which the web substrate (W) treated via the rotary drums (200) is wound; and substrate treating units (400) arranged around the rotary drum (200) to treat the web substrate (W) conveyed while being supported on the outer circumferential surface of the rotary drum (200), whereby it is possible to prevent particles, arcing, and the like.

Abstract: Provided is a smart device that can be attached to, and detached from a watch. The smart device includes: a display for displaying information; a controller that controls the display and displays information; a storage medium unit that is controlled by the controller and in which data is stored; a wireless communication unit that is controlled by the controller and performs wireless communication; a power supply unit that supplies power to the display, the controller, the storage medium unit, and the wireless communication unit; and a housing in which the display, the controller, the storage medium unit, the wireless communication unit, and the power supply unit are installed, wherein the housing includes an attachment/detachment part where a time display unit is attached and detached so that the housing can be attached to, and detached from a watch.

Abstract: A dielectric window supporting structure of inductively coupled plasma (ICP) processing apparatus that includes a main container that houses a substrate to perform plasma processing, a substrate mounting unit on which the substrate is mounted, an exhaust system, a plurality of dielectric windows that form an upper window of the main container, a dielectric supporting unit coupled to an upper end of the main container and supports the dielectric window to seal the inside of the main container, and one or more RF antennas installed to correspond to plurality of the dielectric windows outside the main container. The dielectric supporting unit includes a central frame which supports a bottom edge of the dielectric window and an outer frame which supports the central frame. The outer frame is supported by the upper end of the main container. The central frame includes ceramic material and the outer frame includes metallic material.

Abstract: A dielectric window supporting structure of inductively coupled plasma (ICP) processing apparatus that includes a main container that houses a substrate to perform plasma processing, a substrate mounting unit on which the substrate is mounted, an exhaust system, a plurality of dielectric windows that form an upper window of the main container, a dielectric supporting unit coupled to an upper end of the main container and supports the dielectric window to seal the inside of the main container, and one or more RF antennas installed to correspond to plurality of the dielectric windows outside the main container. The dielectric supporting unit includes a central frame which supports a bottom edge of the dielectric window and an outer frame which supports the central frame. The outer frame is supported by the upper end of the main container. The central frame includes ceramic material and the outer frame includes metallic material.

Abstract: An RF antenna structure of an inductively coupled plasma (ICP) processing apparatus that includes a main container 10 that houses a substrate to be processed S to perform plasma processing, a substrate mounting unit 20 on which the substrate to be processed S is mounted in the main container 10, an exhaust system 30 that discharges gas from inside of the main container 10, one or more dielectric windows 100 that form an upper window of the main container 10, a dielectric supporting unit 400 that is coupled to an upper end of the main container 10 and supports the dielectric window 100 to seal the inside of the main container 10, and one or more RF antennas 40 which are installed to correspond to the dielectric windows 100 outside the main container 10 and to which RF power is applied to form induced electric field in the main container 10, wherein the RF antenna 40 has a plate structure having width and thickness and is at least partly a combination of a horizontal antenna portion 41 and a vertical antenna po

Abstract: An Dielectric window of an inductively coupled plasma (ICP) processing apparatus that includes a main container 10 that houses a substrate to be processed S to perform plasma processing, a substrate mounting unit 20 on which the substrate to be processed S is mounted in the main container 10, an exhaust system 30 that discharges gas from inside of the main container 10, a dielectric window 100 that form an upper window of the main container 10, and one or more RF antennas 40 which are installed to correspond to the dielectric windows 100 outside the main container 10 and to which RF power is applied to form induced electric field in the main container 10, wherein the dielectric window 100 is integrated from a plurality of dielectric members 110 divided in a horizontal direction, is provided, so it is possible to minimize power loss by the replacement of a dielectric supporting structure at a region where an antenna is installed, with ceramic.

Abstract: An Dielectric window of an inductively coupled plasma (ICP) processing apparatus that includes a main container 10 that houses a substrate to be processed S to perform plasma processing, a substrate mounting unit 20 on which the substrate to be processed S is mounted in the main container 10, an exhaust system 30 that discharges gas from inside of the main container 10, a dielectric window 100 that form an upper window of the main container 10, and one or more RF antennas 40 which are installed to correspond to the dielectric windows 100 outside the main container 10 and to which RF power is applied to form induced electric field in the main container 10, wherein the dielectric window 100 is formed as one body from one or more dielectric members, and bonded with a ceramic reinforcing member 120 to at least one surface of the upper surface and the lower surface of the dielectric window 100, including a dielectric window supporting unit 500 supporting at least one of the dielectric window 100 and the ceramic re

Abstract: A gas supply structure for an inductively coupled plasma (ICP) processing apparatus that includes a main container 10 that houses a substrate to be processed S to perform plasma processing, a substrate mounting unit 20 on which the substrate to be processed S is mounted in the main container 10, an exhaust system 30 that discharges gas from inside of the main container 10, one or more dielectric windows 100 that form an upper window of the main container 10, and one or more RF antennas 40 which are installed to correspond to the dielectric windows 100 outside the main container 10 and to which RF power is applied to form induced electric field in the main container 10, comprising a first diffusion plate 210 that firstly diffuses the processing gas and is connected with a processing gas supplying pipe 300, and a second diffusion plate 220 that diffuses the processing gas diffused by the first diffusion plate 210 into the main container 10 and is installed under the first diffusion plate 210, wherein the second

Abstract: An aligner structure comprises: a first alignment unit (100) for sequentially and firstly aligning the substrate (S) and the mask (M) by the first relative displacement between the substrate (S) and the mask (M); and a second alignment unit (200) for sequentially and secondarily aligning the substrate (S) and the mask (M) by the second relative displacement between the substrate (S) and the mask (M) after the first alignment by the first alignment unit (100). The displacement scale of the second relative displacement is smaller than the displacement scale of the first relative displacement so that the substrate (S) and the mask (M) can be quickly and precisely aligned by performing the first relative displacement between the substrate (S) and the mask (M) with a relatively small displacement scale after finishing the first relative displacement between the substrate (S) and the mask (M) with a relatively large displacement scale.

Abstract: An atomic layer deposition apparatus and an atomic layer deposition system, capable of reducing space for installing the apparatus and significantly improving production speed by forming a thin film on a surface of each of a plurality of rectangular substrates by rotating the substrates with respect to a gas spray portion, with the substrates being supported by one substrate support portion. The atomic layer deposition apparatus includes: a vacuum chamber; a gas supply portion, which is provided above or below the vacuum chamber, and which supplies gas so that a thin film is deposited on a surface of each of substrates; and a substrate support portion, which is provided in the vacuum chamber so as to horizontally rotate about the gas supply portion, and which supports the two or more rectangular substrates arranged in the circumferential direction with respect to the center of rotation of the substrate support portion.