Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X=N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X=N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Abstract: Compounds and method of preparation of Si—X and Ge—X compounds (X?N, P, As and Sb) via dehydrogenative coupling between the corresponding unsubstituted silanes and amines (including ammonia) or phosphines catalyzed by metallic catalysts is described. This new approach is based on the catalytic dehydrogenative coupling of a Si—H and a X—H moiety to form a Si—X containing compound and hydrogen gas (X?N, P, As and Sb). The process can be catalyzed by transition metal heterogenous catalysts such as Ru(0) on carbon, Pd(0) on MgO) as well as transition metal organometallic complexes that act as homogeneous catalysts. The —Si—X products produced by dehydrogenative coupling are inherently halogen free. Said compounds can be useful for the deposition of thin films by chemical vapor deposition or atomic layer deposition of Si-containing films.

Abstract: The present invention relates to a process for the preparation of stannane and deuterostannane by reacting a stannic halide with lithium aluminum hydride or aluminum deuteride respectively in a polydentate solvent.

Abstract: A method for making a higher silane from a lower silane comprises heating a lower silane containing stream without exposing it to temperatures more than 20° C. more than the maximum temperature of a first reaction temperature range. The heated lower silane containing stream is introduced into a first reaction zone and allowed to react. The method further comprises mixing a first gaseous mixture from the first reaction zone with a higher silane containing stream and introducing the mixed streams into a second reaction zone operating within a second reaction temperature range. A second gaseous mixture exiting the second reaction zone is separated into various streams. One stream containing unreacted lower silanes is recycled to an earlier heating step and first reaction zone. The higher silane containing stream is mixed with the first gaseous mixture. Average residence time is low to prevent decomposition and formation of undesired silane byproducts.

Abstract: A process and system for the purification of germane containing phosphine to provide a purified germane product. One aspect of the present invention is a process for making a purified germane product containing less than 50 ppb of phosphine which comprises providing a phosphine contaminated germane gas hydrogen gas mixture; passing the germane gas hydrogen gas mixture through an adsorbent which selectively adsorbs phosphine and withdrawing therefrom a purified germane gas hydrogen mixture; and separating the purified germane gas from the hydrogen germane gas mixture.