Abstract: Four related but independent aspects are described: (1) a method and a system to derive mesh surface descriptions (also called connectivity-wireframes) and material properties from objects represented as a scalar field (e.g. discrete multi-dimensional data), scalar functions (e.g. implicit surfaces) or any other surface description, (2) a compact, optionally multi-scalable, optionally view-dependent, optionally animation-friendly, multi-dimensional surface representation method and system comprising a combination of a surface mesh description and material properties associated with a reference grid, (3) a digital coding and decoding method and system of a combined surface mesh representation with connectivity information and material properties and a reference grid, and (4) a method and system for conversion of other surface descriptions to the combined surface mesh representation and reference grid.
Type:
Grant
Filed:
July 19, 2005
Date of Patent:
May 26, 2009
Assignees:
Interuniversitair Micro-Elektronica Centrum (IMEC), Vrije Universiteit Brussel (VUB )
Abstract: The present invention may provide a particle detector or imager which may be used for accurate recording of medical (2-D) X-ray images. The imager includes at least one detector panel. The detector panel includes a microgap detector with an array of pixel electrodes of a novel form. Each pixel electrode is insulated from a planar cathode by means of an insulating layer. Each pixel electrode is connected to an underlying contact by means of a via hole in the insulating layer. The insulating layer is preferable conformal with the electrodes. The underlying contact is connected to an electronic measuring element which preferably lies underneath the electrode and is about the same size as the electrode. The measuring element may be a storage device, a digital counter or similar. A switching transistor is connected to the measuring device. The switching transistor may be a thin film transistor. Alternatively, both measuring element and transistor may be formed in a single crystal semiconductor, e.g.
Type:
Grant
Filed:
February 10, 1998
Date of Patent:
September 19, 2000
Assignees:
YEDA Research and Development Co., Ltd., Vrije Universiteit Brussel (VUB), Interuniversitair Micro-Electronics Centrum vzw (IMEC vzw)
Inventors:
Eric Beyne, Amos Breskin, Rachel Chechik, Stefaan Tavernier, Walter Van Doninck