Patents Assigned to W&Wsens Devices, Inc.
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Patent number: 11830954Abstract: Microstructures of micro and/or nano holes on one or more surfaces enhance photodetector optical sensitivity. Arrangements such as a CMOS Image Sensor (CIS) as an imaging LIDAR using a high speed photodetector array wafer of Si, Ge, a Ge alloy on SI and/or Si on Ge on Si, and a wafer of CMOS Logic Processor (CLP) ib Si fi signal amplification, processing and/or transmission can be stacked for electrical interaction. The wafers can be fabricated separately and then stacked or can be regions of the same monolithic chip. The image can be a time-of-flight image. Bayer arrays can be enhanced with microstructure holes. Pixels can be photodiodes, avalanche photodiodes, single photon avalanche photodiodes and phototransistors on the same array and can be Ge or Si pixels. The array can be of high speed photodetectors with data rates of 56 Gigabits per second, Gbps, or more per photodetector.Type: GrantFiled: October 26, 2022Date of Patent: November 28, 2023Assignee: W&WSens Devices Inc.Inventors: Shih-Yuan Wang, Shih-Ping Wang
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Patent number: 11791432Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.Type: GrantFiled: February 23, 2021Date of Patent: October 17, 2023Assignee: W&WSens Devices, Inc.Inventors: Shih-Yuan Wang, Shih-Ping Wang
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Patent number: 11121271Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.Type: GrantFiled: August 1, 2019Date of Patent: September 14, 2021Assignee: W&WSens, Devices, Inc.Inventors: Shih-Yuan Wang, Shih-Ping Wang
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Patent number: 10700225Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.Type: GrantFiled: July 23, 2018Date of Patent: June 30, 2020Assignee: W&WSENS DEVICES, INC.Inventors: Shih-Yuan Wang, Shih-Ping Wang
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Patent number: 10622498Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.Type: GrantFiled: November 20, 2015Date of Patent: April 14, 2020Assignee: W&WSENS DEVICES, INC.Inventors: Shih-Yuan Wang, Shih-Ping Wang
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Publication number: 20200028000Abstract: Lateral and vertical microstructure enhanced photodetectors and avalanche photodetectors are monolithically integrated with CMOS/BiCMOS ASICs and can also be integrated with laser devices using fluidic assembly techniques. Photodetectors can be configured in a vertical PIN arrangement or lateral metal-semiconductor-metal arrangement where electrodes are in an inter-digitated pattern. Microstructures, such as holes and protrusions, can improve quantum efficiency in silicon, germanium and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.Type: ApplicationFiled: August 1, 2019Publication date: January 23, 2020Applicant: W&Wsens Devices, Inc.Inventors: Shih-Yuan WANG, Shih-Ping WANG
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Patent number: 10468543Abstract: Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.Type: GrantFiled: March 8, 2019Date of Patent: November 5, 2019Assignee: W&Wsens Devices, Inc.Inventors: Shih-Yuan Wang, Shih-Ping Wang, M. Saif Islam
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Patent number: 10446700Abstract: Microstructure enhanced photodiodes and avalanche photodiodes are monolithically integrated with CMOS/BiCMOS circuitry such as transimpedance amplifiers. Microstructures, such as holes, can improve quantum efficiency in silicon and III-V materials and can also reduce avalanche voltages for avalanche photodiodes. Applications include optical communications within and between datacenters, telecommunications, LIDAR, and free space data communication.Type: GrantFiled: October 30, 2017Date of Patent: October 15, 2019Assignee: W&Wsens Devices, Inc.Inventors: Shih-Yuan Wang, Shih-Ping Wang, M. Saif Islam
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Patent number: 9818893Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.Type: GrantFiled: November 17, 2015Date of Patent: November 14, 2017Assignee: W&WSENS DEVICES, INC.Inventors: Shih-Yuan Wang, Shih-Ping Wang
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Patent number: 9530905Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.Type: GrantFiled: November 17, 2015Date of Patent: December 27, 2016Assignee: W&WSENS DEVICES, INC.Inventors: Shih-Yuan Wang, Shih-Ping Wang
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Patent number: 9525084Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures are described. The microstructures, such as holes, effectively increase the absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more. Their thickness dimensions allow them to be conveniently integrated on the same Si chip with CMOS, BiCMOS, and other electronics, with resulting packaging benefits and reduced capacitance and thus higher speeds.Type: GrantFiled: November 18, 2015Date of Patent: December 20, 2016Assignee: W&Wsens Devices, Inc.Inventors: Shih-Yuan Wang, Shih-Ping Wang
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Patent number: 9496435Abstract: Techniques for enhancing the absorption of photons in semiconductors with the use of microstructures arc described. The microstructures, such as pillars and/or holes, effectively increase the effective absorption length resulting in a greater absorption of the photons. Using microstructures for absorption enhancement for silicon photodiodes and silicon avalanche photodiodes can result in bandwidths in excess of 10 Gb/s at photons with wavelengths of 850 nm, and with quantum efficiencies of approximately 90% or more.Type: GrantFiled: May 22, 2014Date of Patent: November 15, 2016Assignee: W&Wsens Devices, Inc.Inventors: Shih-Yuan Wang, Shih-Ping Wang