Abstract: The invention relates to the preparation of a material more favorably pri that the usual quartz crucible for use in the crucible-pulling of silicon according to Czochralski. To prevent reaction of the crucible wall with molten silicon, the surface of the shaped carbon body is coated by means of chemical vapor deposition first with a carbon-enriched silicon carbide layer and then with a carbon-enriched silicon nitride layer. The carbon-enriched silicon carbide layer is obtained by reacting a gaseous silicon compound with a gaseous carbon compound at a temperature of the shaped carbon body to be coated at 1250.degree. to 1350.degree. C. while the carbon-enriched silicon nitride layer is obtained by reacting a gaseous organosilicon compound with ammonia at a temperature of the shaped carbon body of 1000.degree. to 1200.degree. C.