Abstract: A method for pulling a silicon single crystal has the single crystal being pulled at a speed defined as maximum pulling speed in the vertical direction with respect to a silicon melt held in a crucible. The value of the maximum pulling speed is approximately proportional to the axial temperature gradient in the growing single crystal.
Type:
Grant
Filed:
December 5, 1994
Date of Patent:
January 30, 1996
Assignee:
Wacker-Chemitronic Gesellschaft fuer Eletronik-Grundstoffe mbH
Inventors:
Wilfried von Ammon, Erich Dornberger, Hans Oelkrug, Peter Gerlach, Franz Segieth