Patents Assigned to Wacker-Chemitronic Gesellschaft fur Elektronic-Grundstoffe mbH
  • Holding device and method for treating wafer-like objects, and a method of treating them
    Patent number: 5093550
    Abstract: A wafer holding device including a frame (2) which surrounds a wafer (1) ch is received without contact, which can be moved with the wafer having at least three holding elements (3) which are directed toward the outside circumference of the wafer and which can be changed from a holding position to a release position. The wafer can be supported in the holding device during many steps associated with movement in the production process so that a multiplicity of gripping and release operations which stress the wafer surface are unnecessary.
    Type: Grant
    Filed: April 10, 1990
    Date of Patent: March 3, 1992
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronic-Grundstoffe mbH
    Inventors: Hans A. Gerber, Georg Hochgesang, Alfred Pardubitzki, Manfred Schmiedlindl, Werner Zipf, Arthur Schweighofer
  • Silicon wafers for producing oxide layers of high breakdown strength and process for the production thereof
    Patent number: 4954189
    Abstract: Silicon wafers and a process for the production thereof which produces was having intrinsic gettering action and on which thin oxide layers with high breakdown strength can be produced. During the production, the wafers are subjected to a treatment which smooths the wafer surface, for example, by repolishing, after the intrinsic getters have been produced in the interior of the wafer. Oxide layers subsequently deposited are outstanding for an increased breakdown strength compared with untreated wafers.
    Type: Grant
    Filed: September 28, 1988
    Date of Patent: September 4, 1990
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronic-Grundstoffe mbH
    Inventors: Peter Hahn, Hubert Piontek, Anton Schnegg, Werner Zulehner
  • Method for the manufacture of dislocation-free monocrystalline silicon rods
    Patent number: 4722764
    Abstract: A method for crucible-free zone pulling of silicon monocrystalline rods is described. According to the invention, a polycrystalline silicon rod obtained by crucible pulling according to the Czochralski procedure is used in lieu of the polycrystalline silicon rod produced by vapor deposition.
    Type: Grant
    Filed: May 1, 1986
    Date of Patent: February 2, 1988
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronic-Grundstoffe mbH
    Inventors: Heinz Herzer, Wolfgang Hensel, Gunter Matuszak
  • Process for the manufacture of high-purity monocrystals
    Patent number: 4330361
    Abstract: In the crucible-pulling of crystalline rods by the Czochralski technique, pulling plants that operate with a radiation screen offer a number of advantages. This process is optimized according to the invention by the use of a radiation screen which is joined to a lifting and pivoting mechanism that can be operated throughout the entire pulling process, and which is brought into position above the melt only when the contents of the crucible have been melted.
    Type: Grant
    Filed: February 6, 1981
    Date of Patent: May 18, 1982
    Assignee: Wacker-Chemitronic Gesellschaft fur Elektronic-Grundstoffe mbH
    Inventors: Franz Kuhn-Kuhnenfeld, Franz Kohl, Friedrich Nemetz, Gerhard Zechmeister