Abstract: A stackable, tray-type packaging unit for semiconductor discs, having a lr portion accommodating the discs and a matching lid, comprising two upright, elongated side walls in the lower portion and two narrow end walls, all walls as well as the lid consisting of deep-drawn plastic material inert to the disc material. A plurality of ribs are formed opposite to each other on the side walls, serving as guide means for the discs during the loading of the unit, stabilizing ribs for accommodating the discs are provided in the base of the lower portion on the joining line between opposite guide ribs. The lower part of the side walls are curved inwardly at an angle of 30.degree. to 60.degree. with respect to the perpendicular upper part.

Abstract: A process for deposition of polycrystalline silicon from the gas phase on ated carrier bodies of carbon, which comprises assembling the carrier bodies from extremely thin flexible graphite foils, heating the bodies to deposition temperature, while contacting them with a gaseous mixture containing a decomposable silicon compound and, if desired, hydrogen, and separating the deposited silicon from the carrier body, after termination of the deposition process, by mechanical means. The polycrystalline silicon can either be deposited in the form of shaped hollow bodies for use as laboratory equipment or in the semiconductor industries, or it may be processed to monocrystalline materials.

Abstract: Semi-conductor discs are cleaned, after being subjected to a polishing operation, by immersing the discs in a solution of about 30-100% by weight non-ionic or anionic surfactant and thereafter rinsing the discs with water.

Abstract: A process for the crucible-free zone pulling of a polycrystalline rod held ertically, together with a seed crystal fixed at its lower end, in which a melting zone is produced by means of an induction heating coil surrounding the rod, which zone, by means of relative movement of the coil and rod, traverses the entire length of the rod starting from the seed crystal, characterized in that after attaching the seed crystal to the rod, a support member is moved, below the induction heating coil, towards the rod, which support member rests gently against the rod and after being positioned, solidifies to form a firm support for the rod. A device for carrying out the process is also included.

Abstract: Process for producing large-size, self-supporting plates of silicon deposd from the gaseous phase on a substrate body, which comprises heating a graphite substrate to deposition temperature of silicon, which is deposited on the substrate from a gaseous compound to which a dopant has been added until a layer of about 200 to 650 .mu.m has formed, subsequently melting 40-100% of this layer from the free surface downward, resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward, and finally separating the silicon therefrom. The plates so formed are used primarily for making solar cells.

Abstract: A process for producing gallium arsenide or phosphide at temperatures below he sublimation point of arsenic and red phosphorus, respectively, which consists of grinding and tempering a mixture of the constituent elements of the compound to be obtained in substantially stoichiometric amounts.

Abstract: A tool for the contact-free support of discs by gas streams impinging on discs when emerging from the supporting face of the tool at an acute angle to the disc surface, which comprises a body having a supporting face, bores within said body for connection with an extraneous gas reservoir, means in said body directed at an acute angle with respect to the supporting face for discharge of gas flowing from the reservoir, said flow-through means consisting of nozzles or recesses being position at equal distance from each other on the surface of a cone whose base is enclosed by a circle concentric with an imaginary circle on the supporting face, said circle having a diameter of 0.2-0.6 supporting face-diameters, the cone having an angle of 20.degree.-150.degree. at the apex, and wherein the distance of the flow-through means on the surface of the cone is from 2/3r.pi. to 0r, measured at the periphery of the circle, and the radial widths of the flow-through means in the supporting face are about 0.

Abstract: A process for producing large-size, substrate-based semiconductor material of silicon deposited on a substrate body from the gaseous phase, which comprises the steps of heating a substrate body by direct current passage to deposition temperature, contacting said body with a gaseous silicon-containing mixture to which a dopant has been added, until a deposit having a thickness from about 10 to 200 .mu.m has been formed, subsequently melting 80 to 100% of the deposited silicon layer from the free surface downward, and resolidifying the molten silicon by adjustment of a temperature gradient from the substrate body upward. Large-sized plates obtained by cutting up the semiconductor material are used as solar cells.

Abstract: Halogenosilanes and halogenogermanes which are contaminated by a boron-coining impurity are purified by treatment with an effective amount of a hydrated metal oxide or a hydrated silicate containing from about 3 to about 8% by weight of water, and then distilling the treated halogenosilane or halogenogermane at a temperature about 3.degree. to about 15.degree. C above its boiling temperature, and at atmosphere pressure.

Abstract: A process for making crucible-drawn silicon rods containing volatile doping gents, especially antimony, said rods having narrow resistance tolerances, which comprises drawing from a pre-doped silicon melt a monocrystalline rod while passing through the melt a current of inert gas either intermittently or continuously.

Abstract: Process for doping a semiconductor rod which comprises securing a semicontor rod containing a dopant and having a substantially smaller cross section than the rod to be doped against said rod, with the axes of the two rods substantially parallel to one another, both rods consisting of the same semiconductor material, fusing the two rods into a single rod and subjecting the rod so formed to a crucible zone melting process either subsequently or simultaneously.

Abstract: An etching agent for III/V semiconductor material consisting of(a) 1 to 30 percent by weight of hydrofluoric acid,(b) 2 to 30 percent by weight of hydrogen peroxide,(c) 1 to 75 percent by weight of sulfuric acid,(d) 15 to 95 percent by weight of water,Wherein the quantities by weight of the individual components are so chosen that they will add up to 100 percent by weight.

Abstract: A process for the production of a monocrystalline silicon rod by withdrawal rom a silicon melt in a drawing chamber by means of a drawing spindle, comprises passing a stream of a protective gas, such as argon, into said chamber during the drawing operation and through a tube which surrounds the drawing spindle and the growing silicon rod, the chamber being maintained under reduced pressure.

Abstract: A process for the continuous production of silicon rods or tubes by the dsition of silicon from the gaseous phase on the inner wall of a carrier tube heated to the deposition temperature, in which a cooled, hollow metal cylinder is placed in a reactor having one open end, and a flexible band, substantially resistant to silicon at the deposition temperature, is continuously wound onto the cylinder in an overlapping manner at an angle of pitch from 5.degree. to 40.degree. so as to form the carrier tube for the silicon to be deposited; the tube is continuously drawn off the metal cylinder by a rotary traction movement and the portion of the tube adjacent the metal cylinder and still in the reactor is heated to the deposition temperature of about 1050.degree. to 1250.degree. C, while at the same time the gaseous mixture is passed for decomposition through the tube under a pressure exceeding the external atmospheric pressure by 0.

Abstract: Process for producing haze free semiconductor surfaces, especially surfaces of (111)-oriented gallium arsenide, by polishing, which comprises subjecting the surfaces to the polishing action of a mixture of (a) an aqueous suspension containing one or several polishing agents selected from quartz, silica, a silicate and a fluosilicate, and having a pH within the range of from 6 to 8 and, (b) an aqueous solution of hydrogen peroxide having a pH likewise ranging from 6 to 8, the latter being present in an amount of 2 to 15% by weight of H.sub.2 O.sub.2. The invention also relates to the haze free semiconductor surfaces so made.

Abstract: A process for making hollow silicon bodies by decomposition from a gaseous ompound containing silicon and depositing said silicon on heated carrier bodies, which comprises assembling in a decomposition device a number of board-shaped members of silicon to form a hollow carrier body, heating said body to the decomposition temperature of the gaseous compound, introducing the gas into the device whereby it is thermally decomposed, causing the silicon released thereby to become inseparately united with the hollow carrier body, the hollow silicon body so formed being immediately available for use in the semiconductor industries. The invention also comprises the silicon bodies so made.

Abstract: A stackable plastics pallet for packaging semiconductor discs on a gas-ti foil covering, said pallet having a plurality of circular depressions each for accommodating a semiconductor disc, and means for securing the discs between the pallets, the securing means being in the form of sloping part-sector shaped surfaces surrounding said depressions, with two opposite sets of sloping surfaces clamping the semiconductor discs at their outermost rims and immobilizing them thereby.

Abstract: Process for determining the donor content of polycrystalline silicon of high purity to be used in the semiconductor industries, the silicon having a known acceptor content of up to 0.02 atomic % and a donor content of up to 0.1 atomic %, the determination comprising the steps of introducing a test rod into a gas-tight quartz tube of only slightly larger internal diameter than the test rod, converting the rod into the oligocrystalline state by zone drawing with a seed crystal within a streaming protective gas, forming a melting zone in the test rod travelling vertically over the entire length, measuring the resistance of the so formed oligocrystalline test rod, and calculating the donor concentration from the measured resistance, the protective gas being a noble gas with an admixture of 10 - 800 ppm of oxygen.

Abstract: Process of the removal of point defects and point defect agglomerates from emiconductor discs, which comprises the steps of providing one side of the discs with a mechanical stress field and then subjecting the discs to a heat treatment.

Abstract: Process for the determination of the boron content of pure halogensilanes pecially silicon tetrachloride and trichlorosilane, which contain up to 0.1% of atoms of acceptors and donors, which comprises the steps of converting the halogen silanes into the gaseous state in a testing apparatus by contacting said halogensilanes with an evaporator surface heated to a temperature ranging from 80.degree. C to 350.degree. C, passing the generated gases to a support heated to the decomposition temperature of the gases whereby the released silicon is deposited on the support, removing the support and the deposit thereon from the testing apparatus and determining the boron content by calculation from the measured value of the specific resistance of the support plus the deposited silicon. It should be understood that all parts of the testing apparatus which come into contact with the generated gas, with the exception of the support heated to the required deposition temperature, should be at the temperature above 80.