Abstract: A process for the production of a monocrystalline silicon rod by withdrawal rom a silicon melt in a drawing chamber by means of a drawing spindle, comprises passing a stream of a protective gas, such as argon, into said chamber during the drawing operation and through a tube which surrounds the drawing spindle and the growing silicon rod, the chamber being maintained under reduced pressure.

Abstract: Process for making haze-free surfaces of semiconductor bodies which comprs a first step of polishing the surface by means of a polishing agent containing at least one member of the group consisting of quartz, silica, silicates and fluosilicates, and a second step of polishing the surface by means of a polishing agent containing in addition to the above defined agents from 0.1 to 10% by weight calculated on the polishing agent of a nitrogen-free surfactant selected from the group consisting of anionic and non-ionic surfactants, and a mixture thereof.

Abstract: Process for producing haze free semiconductor surfaces, especially surfaces of (111)-oriented gallium arsenide, by polishing, which comprises subjecting the surfaces to the polishing action of a mixture of (a) an aqueous suspension containing one or several polishing agents selected from quartz, silica, a silicate and a fluosilicate, and having a pH within the range of from 6 to 8 and, (b) an aqueous solution of hydrogen peroxide having a pH likewise ranging from 6 to 8, the latter being present in an amount of 2 to 15% by weight of H.sub.2 O.sub.2. The invention also relates to the haze free semiconductor surfaces so made.

Abstract: A process for the continuous production of silicon rods or tubes by the dsition of silicon from the gaseous phase on the inner wall of a carrier tube heated to the deposition temperature, in which a cooled, hollow metal cylinder is placed in a reactor having one open end, and a flexible band, substantially resistant to silicon at the deposition temperature, is continuously wound onto the cylinder in an overlapping manner at an angle of pitch from 5.degree. to 40.degree. so as to form the carrier tube for the silicon to be deposited; the tube is continuously drawn off the metal cylinder by a rotary traction movement and the portion of the tube adjacent the metal cylinder and still in the reactor is heated to the deposition temperature of about 1050.degree. to 1250.degree. C, while at the same time the gaseous mixture is passed for decomposition through the tube under a pressure exceeding the external atmospheric pressure by 0.

Abstract: A process for making hollow silicon bodies by decomposition from a gaseous ompound containing silicon and depositing said silicon on heated carrier bodies, which comprises assembling in a decomposition device a number of board-shaped members of silicon to form a hollow carrier body, heating said body to the decomposition temperature of the gaseous compound, introducing the gas into the device whereby it is thermally decomposed, causing the silicon released thereby to become inseparately united with the hollow carrier body, the hollow silicon body so formed being immediately available for use in the semiconductor industries. The invention also comprises the silicon bodies so made.

Abstract: Device for supporting a crystalline rod during crucible-free zone melting ich comprises a zone-drawing apparatus, a rotating shaft in said apparatus, means for fastening the shaft in the apparatus, a screw bolt mounted for rotation with the shaft, the top end of the screw bolt having a bore for receiving a seed crystal, two or more swivel arms mounted adjacent to the bore and capable of being opened and closed, a ring coaxially surrounding the bolt and means for vertically moving the ring.

Abstract: A stackable plastics pallet for packaging semiconductor discs on a gas-ti foil covering, said pallet having a plurality of circular depressions each for accommodating a semiconductor disc, and means for securing the discs between the pallets, the securing means being in the form of sloping part-sector shaped surfaces surrounding said depressions, with two opposite sets of sloping surfaces clamping the semiconductor discs at their outermost rims and immobilizing them thereby.

Abstract: Process for determining the donor content of polycrystalline silicon of high purity to be used in the semiconductor industries, the silicon having a known acceptor content of up to 0.02 atomic % and a donor content of up to 0.1 atomic %, the determination comprising the steps of introducing a test rod into a gas-tight quartz tube of only slightly larger internal diameter than the test rod, converting the rod into the oligocrystalline state by zone drawing with a seed crystal within a streaming protective gas, forming a melting zone in the test rod travelling vertically over the entire length, measuring the resistance of the so formed oligocrystalline test rod, and calculating the donor concentration from the measured resistance, the protective gas being a noble gas with an admixture of 10 - 800 ppm of oxygen.

Abstract: Process for polishing semiconductor surfaces, especially gallium phosphide urfaces, with an aqueous suspension of aluminum and/or gallium hydroxide precipitated from the elements by an alkaline compound at the pH value between 7.5 and 8, the suspension further containing an alkali hypochlorite in such an amount that in addition to 0.05-0.6 mol hydroxide per liter, the molar content of hypochlorite will be three to ten times that of the hydroxide; the surfaces are subjected to a buffing action with said suspension. The invention also relates to the polishing agent used in the process.

Abstract: Process of the removal of point defects and point defect agglomerates from emiconductor discs, which comprises the steps of providing one side of the discs with a mechanical stress field and then subjecting the discs to a heat treatment.

Abstract: Process for the determination of the boron content of pure halogensilanes pecially silicon tetrachloride and trichlorosilane, which contain up to 0.1% of atoms of acceptors and donors, which comprises the steps of converting the halogen silanes into the gaseous state in a testing apparatus by contacting said halogensilanes with an evaporator surface heated to a temperature ranging from 80.degree. C to 350.degree. C, passing the generated gases to a support heated to the decomposition temperature of the gases whereby the released silicon is deposited on the support, removing the support and the deposit thereon from the testing apparatus and determining the boron content by calculation from the measured value of the specific resistance of the support plus the deposited silicon. It should be understood that all parts of the testing apparatus which come into contact with the generated gas, with the exception of the support heated to the required deposition temperature, should be at the temperature above 80.

Abstract: A residual melt of liquid silicon is removed from a crucible containing the ame by immersing in the melt a capillary body of carbon felt, the melt being absorbed by the capillary body, and removing the capillary body and absorbed melt from the crucible.

Abstract: Device for making monocrystalline gallium arsenide by drawing the crystal from a gallium arsenide-containing melt with adjustment of an arsenic vapor pressure while rotating and lifting the drawing means, said device comprising means for rotating the crucible containing an uncovered melt, and if desired, lifting or lowering the crucible independently of the system, that is to say without rotating the entire quartz apparatus. The means for rotating the crucible includes a ground-in joint formed by the core of the crucible driving shaft and a quartz glass sleeve. The core is made of a material havinga higher coefficient of expansion than quartz glass at the operating temperature of the joint. The accurate seating of the ground-in joint avoids the formation of surface waves on the melt.

Abstract: A method and apparatus for making a reproducible, pressure and surface coant metal to semiconductor contact for voltage capacitance measurements on semiconductor samples with mercury as the metal component, wherein the mercury is pressed through a contact tubule having a constant diameter against a semiconductor surface by means of a movable pressure piston under a reproducible constant pressure from a supply vessel.