Abstract: A method for producing a semiconductor wafer includes the deposition of an epitaxial layer onto a substrate wafer in a deposition reactor. The semiconductor wafer, following the deposition of the epitaxial layer, undergoes treatment in an ozone-containing atmosphere.

Abstract: A method is for simultaneously cutting off a multiplicity of wafers from a hard, brittle workpiece which has a longitudinal axis and a peripheral surface. The workpiece is guided, by means of a translational relative movement, directed perpendicular to the longitudinal axis, between the workpiece and a wire web of a wire saw with the aid of a feed device, through the wire web which is formed by a sawing wire. The workpiece is rotated about the longitudinal axis while the wafers are being cut off. There is also a wire saw which is suitable for carrying out the method and has a device for holding and for rotating the workpiece about the longitudinal axis.

Abstract: A method for removing combustible, metallurgical dust out of the exhaust gas from installations for drawing single silicon crystals is provided. The dust contaminated exhaust gas and a reactive gas, such as air, oxygen or ozone, are fed into a reactor operated at a temperature of 50 to 500° C. where the reactive gas combusts the dust to form solid products. The reactor may be equipped with a catalyst, such as nickel, palladium or platinum, to promote the reaction. The solid products-containing exhaust gas is passed through a filter. By combusting the dust in the reactor, spontaneous explosions can be minimized.

Abstract: A grinding machine has a swivel head (1) with at least one plunge-grinding wheel (2), a cup wheel (3) and a measuring gauge (7) for measuring the diameter and the length of the workpiece.

Abstract: A method for pulling a single crystal has a monocrystalline seed crystal being brought into contact with molten material and an interface being formed between solid and molten material, and molten material being caused to solidify with the formation of a thin-necked crystal and a cylindrical single crystal. The method is one wherein, during the pulling of the thin-necked crystal, it is ensured that the ratio V/G(r) is above a constant Ccrit having the value 1.3*10−3 cm2/Kmin, with V being the pulling rate, with G(r) being the axial temperature gradient at the interface and r being the radial distance from the center of the thin-necked crystal.

Abstract: A process and device for the production of a single crystal of semiconductor material is by pulling the single crystal from a melt, which is contained in a crucible and is heated by a side heater surrounding the crucible. The melt is additionally heated, in an annular region around the single crystal, by an annular heating device which surrounds the single crystal and is positioned above the melt.

Abstract: A wire saw for cutting shaped articles from a workpiece, having at least two wire webs made from sawing wire, which are used for cutting off the shaped articles and which lie one above the other at a distance h and are tensioned between wire-guide rollers. The wire webs are formed by one or more adjacent and parallel wire segments. In this wire saw, no wire segment covers any other wire segment congruently when the wire webs are viewed from above. The invention also relates to a process for cutting a workpiece with the wire saw.

Abstract: A process for producing a silicon single crystal has the crystal being pulled using the Czochralski method while being doped with oxygen and nitrogen. The single crystal is doped with oxygen at a concentration of less than 6.5*1017 atoms cm−3 and with nitrogen at a concentration of more than 5*1013 atoms cm−3 while the single crystal is being pulled. Another process is for producing a single crystal from a silicon melt, in which the single crystal is doped with nitrogen and the single crystal is pulled at a rate V, an axial temperature gradient G(r) being set up at the interface of the single crystal and the melt, in which the ratio V/G(r) in the radial direction is at least partially less than 1.3*10−3cm2min−1 K−1.

Abstract: A method and device for detecting an incorrect position of a semiconductor wafer during a high-temperature treatment of the semiconductor water in a quartz chamber which is heated by IR radiators, has the semiconductor wafer lying on a rotating support and being held at a specific temperature with the aid of a control system. Thermal radiation which is emitted by the semiconductor wafer and the IR radiators is recorded using a pyrometer. The radiation temperature of the recorded thermal radiation is determined. The semiconductor wafer is assumed to be in an incorrect position if the temperature of the recorded thermal radiation fluctuates to such an extent over the course of time that the fluctuation width lies outside a fluctuation range &Dgr;T which is regarded as permissible.