Abstract: A silicon wafer is provided having a polished front surface with an epitaxial coating and a polished back surface, which is distinguished by a SFQRmax value of less than or equal to 0.10 &mgr;m (26 mm×8 mm; 99%). There is also a process for producing silicon wafers of this type by sawing up a single crystal, carrying out an abrasive step, simultaneously polishing a front surface and a back surface of at least three silicon wafers, and applying an epitaxial coating.
Type:
Application
Filed:
September 3, 2002
Publication date:
March 6, 2003
Applicant:
WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALEN AG
Inventors:
Guido Wenski, Ute Mareck, Thomas Altmann