Abstract: A semiconductor memory element is provided including a laminated structure, in which a memory member and a conductor are superposed on a semiconductor substrate. The memory member has a bottom surface in contact with the semiconductor substrate, an upper surface in contact with the conductor, and side surfaces, which are in contact with and surrounded by a partition wall; the bottom surface of the memory member has a width of equal to or not more than 100 nm; a shortest distance between the conductor and the semiconductor substrate is twice or more of the width of the bottom surface of the memory member; the side surface of the memory member has a width, which is either the same as the width of the bottom surface and constant at any position above the bottom surface, or the widest at a position other than the bottom surface and above the bottom surface.

Abstract: Heretofore, silicon nitride film formed by low pressure plasma CVD has been used for an antireflection film of a solar battery. But it is difficult to reduce the production cost of a solar battery, because, in a low pressure process, facility cost and process cost are expensive. As disclosed, a nitride film is formed by atmospheric pressure plasma CVD using dielectric barrier discharge generated by a plasma head where a plurality of plasma head unit parts is installed in parallel to generate plasma by applying electric field or magnetic field via a dielectric member. Stable glow discharge is formed even under atmospheric pressure by dielectric barrier discharge. And nitride film deposition under atmospheric pressure and low cost production of a solar battery is materialized by using dielectric barrier discharge and by reacting different plasmas generated from plasma supply openings laying side-by-side.

Abstract: As the antireflection film of solar cells, a nitride film was used which was conventionally formed by reduced pressure plasma CVD. However, reducing solar cell production costs has been difficult due to high equipment costs and processing costs involved in reduced pressure treatment. By means of a plasma head comprising multiple plasma head unit members which, arranged in rows, apply an electric or magnetic field via a dielectric member and generate plasma, this CVD film production method forms a nitride film with atmospheric pressure plasma CVD using dielectric-barrier discharge. The dielectric discharge is capable of forming a glow discharge plasma stable even at atmospheric pressure, and, by generating and reacting different plasmas from neighboring plasma outlets, it is possible to form a nitride film in atmospheric pressure, making it possible to produce low-cost solar cells.