Abstract: A FeFET and a method of its manufacture are provided, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm<dr<150 nm, without impairing the data retention property of not less than 105 seconds and the data rewrite endurance property of not less than 108 times, of those that have hitherto been developed, and the FeFET allowing a memory window of 0.40 V or more when a sweep amplitude of the gate voltage is not more than 3.3 V.

Abstract: [Object] To provide a FeFET and a method of its manufacture, the FeFET having a ferroelectric whose film thickness (dr) is made small and so nanofine as to range in: 59 nm<dr<150, without impairing the data retention property of not less than 105 seconds and the data rewrite withstand property of not less than 108 times, of those that have hitherto been developed, and the FeFET allowing data to be written with a writing voltage whose absolute value is not more than 3.3 volts. [Means for Solving] In methods of making a device in which an insulator, a film made of constituent elements of a bismuth layered perovskite crystalline ferroelectric and a metal are sequentially formed in the indicated order on a semiconductor substrate and thereafter are annealed for ferroelectric crystallization, thereby preparing the device composed of the semiconductor, insulator, ferroelectric and metal, a method of making a semiconductor ferroelectric memory element in which the film is composed of Ca.

Abstract: A semiconductor memory element is provided including a laminated structure, in which a memory member and a conductor are superposed on a semiconductor substrate. The memory member has a bottom surface in contact with the semiconductor substrate, an upper surface in contact with the conductor, and side surfaces, which are in contact with and surrounded by a partition wall; the bottom surface of the memory member has a width of equal to or not more than 100 nm; a shortest distance between the conductor and the semiconductor substrate is twice or more of the width of the bottom surface of the memory member; the side surface of the memory member has a width, which is either the same as the width of the bottom surface and constant at any position above the bottom surface, or the widest at a position other than the bottom surface and above the bottom surface.

Abstract: A ferroelectric device and a manufacturing method are provided. While holding a nonvolatile memory retention capability and a multiple rewriting endurance as the distinctive features of a ferroelectric device, the disclosed ferroelectric device is wider in memory window and more adaptively made microfiner than a conventional ferroelectric device that has used a ferroelectric mainly constituted of Sr—Bi—Ta—O as an oxide of strontium, bismuth and tantalum. Directly on or with intermediary of an insulator on a semiconductor there are layered a first ferroelectric and a conductor to form a gate stack, the first ferroelectric being mainly constituted of Sr—Ca—Bi—Ta—O as an oxide of strontium, calcium, bismuth and tantalum and being built up by a metal organic vapor deposition technique from a suitable film-forming raw material. The gate stack is heat-treated to cause the first ferroelectric to develop its ferroelectricity.

Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.

Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.

Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.

Abstract: Provided is a vaporizer that can efficiently cool a carrier gas, improve the effect of preventing a material from being clogged near the outlet port of a gas passage, contribute to prolonging the timing of maintenance and improving operating efficiency, and exert more uniform dispersing effect. A vaporizer includes: a center rod inserted into a carrier gas introduction hole formed in a disperser to form the gas passage in cooperation with the inner wall of the carrier gas introduction hole; a cooling part disposed on the outer circumferential side of the carrier gas introduction hole in the disperser to cool the inside of the gas passage; a cooling member insertion hole formed across almost the entire length of the center rod along the axial direction of the center rod; and a cooling member disposed in the inside of the cooling member insertion hole to cool the center rod.