Abstract: A stabilized wafer for monitoring and calibrating oxide charge test equipment. The stabilized wafer comprises; a silicon wafer, a SiO2 layer of at least 100 angstroms upon the silicon wafer, and a phosphosilicate glass layer containing phosphorus formed in the SiO2 layer for providing the stabilized wafer by stabilizing an SiO2 interface and containing oxygen ions. The stabilized wafer is used for monitoring and calibrating oxide charge test equipment.