Abstract: A method for measuring a thickness of a photolithography element, such as a pellicle, includes projecting a light beam from a first side of the pellicle and at a plane above a first surface of the pellicle, projecting the light beam from the first side of the pellicle and at a plane corresponding to a plane of the pellicle, and projecting the light beam from the first side of the pellicle and at a plane below a second surface of the pellicle. The light beam can be projected from a laser light source. The light beams are projected at different media above and below the pellicle. The light beams pass through the first side of the different media and exit at a second side opposite to the first side at different intensities. The light beam may not pass through the pellicle if the light beam is incident to an opaque pellicle frame, and thus has minimal intensity at the second side.

Abstract: A method of forming a HDPCVD oxide layer over metal lines, the metal lines having gaps between the metal lines having an aspect ratio of two or more. The method comprises the steps of: forming a liner oxide layer over the metal lines; and forming an HDPCVD oxide layer over the liner oxide layer, the formation of the HDPCVD oxide layer being done such that the deposition-to-sputter ratio is increasing as the gaps are being filled.

Abstract: A method to monitor a dimension of a pellicle includes projecting a first light signal against a surface of the pellicle. A second light signal reflected from the surface of the pellicle is detected, with the second light signal being a representation of the first light signal. The method determines if the dimension of the pellicle is within an allowable value based on a characteristic of the detected second light signal. The characteristic of the detected second light signal can include time periods between pulses of the detected second light signal, an intensity of the detected second light signal, or a positional displacement of the detected second light signal.

Abstract: A method of forming a silicon dioxide layer in a process chamber is disclosed. The process comprises: flowing silane into the process chamber; flowing N2O into the process chamber; generating a RF signal at a first predetermined power at a first frequency; and generating a RF signal at a second predetermined power at a second frequency.