Patents Assigned to WaferTech, L.L.C.
  • Method for depositing high density plasma chemical vapor deposition oxide with improved topography
    Patent number: 6251795
    Abstract: A method of forming a self-planarized HDPCVD oxide layer over a substrate having uneven topography in a process chamber is disclosed. The method comprising the steps of: depositing HDPCVD oxide over said uneven topography; and performing a sputter-only step in said process chamber.
    Type: Grant
    Filed: April 8, 1999
    Date of Patent: June 26, 2001
    Assignee: WaferTech, L.L.C.
    Inventors: Jesse C. Shan, Chang-Kuei Huang, Steve H. Y. Yang