Abstract: A conveyorized atmospheric pressure chemical vapor deposition apparatus having a heated muffle and a conveyor belt for conveying objects to be coated through said muffle. At least one chemical vapor deposition zone is provided in the muffle. An injector assembly is also provided for uniformly injecting first and second reactant gases in the deposition zone across the width of the conveyor belt and against the surfaces of the objects to be coated. The gases exit from slots connected to distribution plenums. Polished cooled surfaces are used on the injector assembly to minimize deposition of chemicals thereon.

Abstract: The foregoing and other objects of the invention are achieved by a drive system which includes a base and a support assembly for rotatably supporting one end of the first arm from said base and for raising and lowering the arm with respect to the base. A second arm has one end rotatably supported at the other end of the first arm and an effector mount is rotatably supported at the other end of the second arm. Drive structure mounted on said base rotate said support assembly. Drive structure mounted at the lower end of said support assembly raise and lower the arm. Drive structure for rotating said second arm and drive structure for rotating said effector are mounted at the upper end of said support. All of said drive structure are mounted within an enclosed housing.

Abstract: A microwave amplifier that both multiplicatively and additively amplifies microwave frequency signals. The amplifier, herein coined a matrix amplifier, is a distributed amplifier with two or more tiers (rows) of transistors. Each tier has a plurality of transistors which additively amplify the signal entering that row of the amplifier, and each row multiplicatively amplifies the output of the previous row. The gates of the transistors in each row are sequentially coupled to an input transmission line having a series of transmission elements. The outputs of all the transistors from each row are sequentially coupled to the input transmission line of the next tier, except that the outputs of the last tier are coupled to an output transmission line for transmitting the output of the amplifier to an output node. Furthermore, each transmission lines has (1) at least one line termination at one of its ends for absorbing signals incident on that end of the transmission line, and (2) biasing means for d.c.

Abstract: A connector for interconnecting packaged microwave integrated circuits having a connector body with a central contact and outwardly extending rims and a disk shaped compression gasket for providing electrical contact between the circuit package and the connector body.

Abstract: A microwave circuit and housing in which the housing cavity is reduced in size by providing threaded slots in side walls of the housing which receive tabs extending from the microwave circuit carriers. Pillars are inserted in the slots for maintaining the carriers in position on the bottom surface of the housing and for filling the slots. Reduced weight, height, and width is achieved with a reduced number of piece parts.

Abstract: A microwave device is housed in a plastic injected molded body which has been plated with an electrical conductor to provide shielding. Holes through the walls of the housing are plated and cooperatively function with electrical conductors as coaxial input and output lines.

Abstract: An RF amplifier including first and second FETs which are interconnected to function as a single transistor with improved gate. An input signal is applied across the gate and source of the first FET, and an output signal is obtained across the drain and source of the second transistor. RF coupling of the FETs is provided by first and second serially connected transmission lines connected between the drain of the first FET and the gate of the second FET. A third transmission line connects the common terminal of the first and second transmission line to circuit ground. In a preferred embodiment, the amplifier comprises a monolithic circuit formed in gallium arsenide with the transmission lines comprising microstrip.

Abstract: A controlled voltage yttrium iron garnet (YIG) resonator incorporates a clipping diode in order to maintain a constant output voltage. The clipping diode is connected either across an input or an output loop associated with the resonator. The resonator, as a result of its high Q characteristic, is insensitive to changes in capacitance of the clipping diode.

Abstract: An electron bombarded semiconductor amplifier including an elongated envelope having an electron gun projecting a sheet electron beam towards a distributed element semiconductor target which propagates an output signal including a single extended area semiconductor diode or a plurality of series-connected semiconductor diodes which are reverse biased and a doubly-distributed deflection means adapted to receive an input signal and cooperate with said sheet electron beam to deflect the beam in accordance with an input signal in synchronism with electron beam velocity and target signal propagation velocity to strike the target and generate an amplifier output signal.

Abstract: A microwave oscillator including a tuning varactor and a transistor in a thin film series resonant circuit.

Abstract: A bulk semiconductor oscillator subassembly is carried on a support pin. The oscillator assembly includes a semiconductor diode mounted on the pin with one terminal connected thereto. The other terminal is connected to one end of an input coupling loop which has its other end connected to the pin through a by-pass capacitor. Biasing voltages are applied to the diode via a lead connected to the loop. The loop is coupled to a Yttrium Iron Garnet (YIG) sphere which serves as a resonator. The resonant frequency of the resonator is tuned by adjusting a DC magnetic field applied thereto. The output is obtained by an output loop which is located orthogonally with respect to the input loop and coupled to the YIG whereby the input and output loops are coupled through the YIG resonator.

Abstract: An electron bombarded semiconductor amplifier with a simplified target construction where the common point of the diode array is returned to ground enabling the radio frequency bypassing capacitors to be made a smaller size and the dc blocking capacitors to be provided by separate capacitors outside of the vacuum envelope and also optimized.

Abstract: An electron-bombarded semiconductor (EBS) source including plural EBS diodes connected in series at the fundamental radio frequency operating range delivers power to a load. A single voltage supply is provided and radio frequency isolation means is connected between the series connected diodes and said supply to effectively connect the diodes in parallel with respect to said supply voltage and current.

Abstract: A laminar flow electron gun employing a narrow, elongated cathode for forming a rectangular beam and a plurality of electrodes having narrow, elongated apertures cooperating with said cathode to draw electrons from said cathode and operate on the electrons to focus the rectangular beam onto a target by providing a parallel flow region adjacent said cathode, followed by a divergent flow region, in turn, followed by a convergent flow or focusing region.