Patents Assigned to Wavefront Holdings, LLC
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Patent number: 11217719Abstract: Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.Type: GrantFiled: September 3, 2019Date of Patent: January 4, 2022Assignee: WAVEFRONT HOLDINGS, LLCInventor: Jie Yao
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Patent number: 10453984Abstract: Disclosed are phototransistors, and more specifically a detector that includes two or more phototransistors, conductively isolated from each other. Embodiments also relate to methods of making the detector.Type: GrantFiled: March 23, 2017Date of Patent: October 22, 2019Assignee: WAVEFRONT HOLDINGS, LLCInventor: Jie Yao
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Patent number: 10121819Abstract: Disclosed herein is a phototransistor (PT) comprising an emitter, a collector and a floating base; wherein the floating base, a p-n junction between the emitter and base (E-B junction) and a p-n junction between the base and the collector (B-C junction) are collectively in direct physical contact only with and completely encapsulated only by the emitter, the collector, and a section of a dielectric. Under an operating condition of the PT, a DC current density averaged over the E-B junction or a DC current density averaged over the B-C junction may be at least 100 times of a DC current density averaged over an opto-electronically active region of the PT. A sum of a capacitance of the E-B junction and a capacitance of the B-C junction may be less than 1 fF.Type: GrantFiled: December 8, 2016Date of Patent: November 6, 2018Assignee: WAVEFRONT HOLDINGS, LLCInventor: Jie Yao
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Patent number: 10002979Abstract: Disclosed are a semiconductor photodiode (PD) or phototransistor (PT) photo detector with a unipolarly doped edge region containing a portion of the photon absorption layer and occupying over 99% of the photo detector area as projected on a plane parallel to the semiconductor substrate. Embodiments also relate to methods of making the photo detector.Type: GrantFiled: May 30, 2017Date of Patent: June 19, 2018Assignee: WAVEFRONT HOLDINGS, LLCInventor: Jie Yao
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Patent number: 9269846Abstract: Disclosed herein is a phototransistor (PT) comprising an emitter, a collector, a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being lower than one single photon within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being below a photon shot noise of the photon flux within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux is 1/?{square root over (?)} of a photon shot noise of the photon flux within f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being below 2f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being 2f/?, wherein f is an electrical bandwidth of the PT and ? is a current amplification gain of the PT.Type: GrantFiled: February 17, 2014Date of Patent: February 23, 2016Assignee: WAVEFRONT HOLDINGS, LLCInventor: Jie Yao
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Publication number: 20150280046Abstract: Disclosed herein is a phototransistor (PT) comprising an emitter, a collector, a floating base, wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being lower than one single photon within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux being below a photon shot noise of the photon flux within f, or wherein the PT is configured to detect a photon flux incident on the PT and the photon flux is 1/?{square root over (?)} of a photon shot noise of the photon flux within f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being below 2f, or wherein the PT is capable of detecting a photon flux incident on the PT and the photon flux being 2f/?, wherein f is an electrical bandwidth of the PT and ? is a current amplification gain of the PT.Type: ApplicationFiled: February 17, 2014Publication date: October 1, 2015Applicant: Wavefront Holdings, LLCInventor: Jie YAO
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Patent number: 8354324Abstract: A two-terminal mesa phototransistor and a method for making it are disclosed. The photo transistor has a mesa structure having a substantially planar semiconductor surface. In the mesa structure is a first semiconductor region of a first doping type, and a second semiconductor region of a second doping type opposite to that of the first semiconductor region, forming a first semiconductor junction with the first region. In addition, a third semiconductor region of the first doping type forms a second semiconductor junction with the second region. The structure also includes a dielectric layer. The second semiconductor region, first semiconductor junction, and second semiconductor junction each has an intersection with the substantially planar semiconductor surface. The dielectric covers, and is in physical contact with, all of the intersections.Type: GrantFiled: July 19, 2012Date of Patent: January 15, 2013Assignee: Wavefront Holdings, LLCInventor: Jie Yao
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Patent number: 8314446Abstract: A sensor including an array of light sensitive pixels, each pixel including: at least one hetero-junction phototransistor having a floating base without contact, wherein each phototransistor is a mesa device having active layers exposed at side-walls of the mesa device; and at least one atomic layer deposited high-k dielectric material adjacent to and passivating at least the side-wall exposed active layers.Type: GrantFiled: October 3, 2008Date of Patent: November 20, 2012Assignee: Wavefront Holdings, LLCInventor: Jie Yao
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Publication number: 20120282720Abstract: A two-terminal mesa phototransistor and a method for making it are disclosed. The photo transistor has a mesa structure having a substantially planar semiconductor surface. In the mesa structure is a first semiconductor region of a first doping type, and a second semiconductor region of a second doping type opposite to that of the first semiconductor region, forming a first semiconductor junction with the first region. In addition, a third semiconductor region of the first doping type forms a second semiconductor junction with the second region. The structure also includes a dielectric layer. The second semiconductor region, first semiconductor junction, and second semiconductor junction each has an intersection with the substantially planar semiconductor surface. The dielectric covers, and is in physical contact with, all of the intersections.Type: ApplicationFiled: July 19, 2012Publication date: November 8, 2012Applicant: WAVEFRONT HOLDINGS, LLCInventor: Jie YAO
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Patent number: 8253215Abstract: A two-terminal mesa phototransistor and a method for making it are disclosed. The photo transistor has a mesa structure having a substantially planar semiconductor surface. In the mesa structure is a first semiconductor region of a first doping type, and a second semiconductor region of a second doping type opposite to that of the first semiconductor region, forming a first semiconductor junction with the first region. In addition, a third semiconductor region of the first doping type forms a second semiconductor junction with the second region. The structure also includes a dielectric layer. The second semiconductor region, first semiconductor junction, and second semiconductor junction each has an intersection with the substantially planar semiconductor surface. The dielectric covers, and is in physical contact with, all of the intersections.Type: GrantFiled: January 14, 2010Date of Patent: August 28, 2012Assignee: Wavefront Holdings, LLCInventor: Jie Yao