Abstract: The present invention relates to a terminal-integrated package method for a metal base package module that can effectively prevent short-circuit or breakage by not using wire bonding for connection with an external circuit.

Abstract: A method of manufacturing a package module structure of a high power device using a metal substrate that can improve reliability by minimizing stress due to a thermal expansion coefficient difference between a metal substrate and a semiconductor device includes: preparing a metal substrate; forming an oxide layer by selectively anodizing the metal substrate; forming a mounting groove for mounting a semiconductor device by etching a portion of the oxide layer; installing a shock-absorbing substrate that is made of a material having a thermal expansion coefficient in a range similar to a material of a semiconductor device to expose the entirety or a portion of a bottom portion of the mounting groove; mounting the semiconductor device in the shock-absorbing substrate exposed to the mounting groove; and electrically connecting an electrode terminal of the semiconductor device and an electrode line formed in an upper surface of the oxide layer.

Abstract: The present invention relates to a terminal-integrated package method for a metal base package module that can effectively prevent short-circuit or breakage by not using wire bonding for connection with an external circuit.

Abstract: A method of manufacturing a package module structure of a high power device using a metal substrate that can improve reliability by minimizing stress due to a thermal expansion coefficient difference between a metal substrate and a semiconductor device includes: preparing a metal substrate; forming an oxide layer by selectively anodizing the metal substrate; forming a mounting groove for mounting a semiconductor device by etching a portion of the oxide layer; installing a shock-absorbing substrate that is made of a material having a thermal expansion coefficient in a range similar to a material of a semiconductor device to expose the entirety or a portion of a bottom portion of the mounting groove; mounting the semiconductor device in the shock-absorbing substrate exposed to the mounting groove; and electrically connecting an electrode terminal of the semiconductor device and an electrode line formed in an upper surface of the oxide layer.

Abstract: A method of manufacturing a metal base package having a via structure that can provide via forming technology for a cheap 3D package and form a via having a high aspect ratio of various sizes is provided. The method of manufacturing a metal base package having a via structure includes: preparing a metal substrate; forming an oxidation prevention mask pattern in the prepared metal substrate; forming a metal oxide layer by oxidizing a metal substrate portion that is exposed between the oxidation prevention mask patterns in a predetermined depth; removing the oxidation prevention mask pattern; forming a via forming mask pattern on the metal substrate and the metal oxide layer; forming a via in the metal oxide layer by performing chemical etching; removing the via forming mask pattern; and forming a conducting layer with a conductive material at the inside of the formed via.

Abstract: A metal-based photonic device package module that is capable of greatly improving heat releasing efficiency and implementing a thin package is provided. The metal-based photonic device package module includes a metal substrate that is formed the shape of a plate, a metal oxide layer that is formed on the metal substrate to have a mounting cavity, a photonic device that is mounted in the mounting cavity of the metal oxide layer, and a reflecting plane that is formed at an inner surface of the mounting cavity of the metal oxide layer.

Abstract: Provided is a three-dimensional aluminum package module including: an aluminum substrate; an aluminum oxide layer formed on the aluminum substrate and having at least one first opening of which sidewalls are perpendicular to an upper surface of the aluminum substrate; a semiconductor device mounted in the first opening using an adhesive; an organic layer covering the aluminum oxide layer and the semiconductor device; and a first interconnection line and a passive device circuit formed on the organic layer and the aluminum oxide layer.

Abstract: Provided is a three-dimensional aluminum package module including: an aluminum substrate; an aluminum oxide layer formed on the aluminum substrate and having at least one first opening of which sidewalls are perpendicular to an upper surface of the aluminum substrate; a semiconductor device mounted in the first opening using an adhesive; an organic layer covering the aluminum oxide layer and the semiconductor device; and a first interconnection line and a passive device circuit formed on the organic layer and the aluminum oxide layer.

Abstract: Provided are a high efficiency light emitting diode and a method for fabricating the same, in which a multi-layer reflector is laminated to a surface emission type light emitting diode to improve the efficiency of a light emitting diode. A high efficiency reflector is integrated on the light emitting diode using a dry etching process and a wet etching process. Although light produced from an active layer when applying a current thereto is emitted in several directions, the reflectors formed both sides of the active layer reflect the emitted light toward a surface of a semiconductor substrate, thus improving the light efficiency. Compared with the existing light emitting diode, the structure of the proposed light emitting diode is more efficient and therefore it can be used as a light source having low power consumption and high brightness. Also, the light emitting diode can be fabricated using the existing semiconductor process, thus reducing the complexity of the fabricating process.

Abstract: A package substrate, a manufacturing method thereof, a base package module, and a multi-layered package module having package substrates laminated on upper and lower portions of a base package module are provided. The base package module includes a base metal substrate, a first metal oxide layer that is formed on the base metal substrate to have a cavity therein, a device that is mounted in the cavity on the base metal substrate and insulated by the first metal oxide layer formed on a sidewall in the cavity, and a conductor that is connected to the device and a wiring pad formed on the first metal oxide layer on the base metal substrate. The package substrate includes a wiring pad, a conductor line, a second metal oxide layer having an opening that exposes a device, and a via that is connected to the wiring pad through a connection pad in the second metal oxide layer.

Abstract: Provided is a three-dimensional aluminum package module including: an aluminum substrate; an aluminum oxide layer formed on the aluminum substrate and having at least one first opening of which sidewalls are perpendicular to an upper surface of the aluminum substrate; a semiconductor device mounted in the first opening using an adhesive; an organic layer covering the aluminum oxide layer and the semiconductor device; and a first interconnection line and a passive device circuit formed on the organic layer and the aluminum oxide layer.

Abstract: A method for manufacturing passive devices and semiconductor packages using a thin metal piece is provided. According to the method, an adhesive layer is formed on a dummy substrate; a thin metal piece is bonded on the adhesive layer; a masking material is attached to the thin metal piece, a dielectric layer is formed; a masking material is attached to form metal pads; a metal pad is formed, and the formed device is attached to a lower substrate using the metal pads; the adhesive layer and the dummy substrate are removed, a masking material is attached on a surface exposed, a region where passive devices are to be formed is patterned, and the thin metal piece is etched at a predetermined depth; and solder bumps for surface mounting are formed.

Abstract: A metal-based photonic device package module that is capable of greatly improving heat releasing efficiency and implementing a thin package is provided. The metal-based photonic device package module includes a metal substrate that is formed the shape of a plate, a metal oxide layer that is formed on the metal substrate to have a mounting cavity, a photonic device that is mounted in the mounting cavity of the metal oxide layer, and a reflecting plane that is formed at an inner surface of the mounting cavity of the metal oxide layer.

Abstract: A method for allowing an easier electric connection between layers of a multi-layer package structure using a metal pin fabricated based on semiconductor device processes is provided. A metal pin having a high aspect ratio is formed on a lower substrate, while a via hole is formed in an upper substrate. The metal pin is inserted into the via hole and adhered together to make an electric connection between the lower and upper substrates. The metal pin is obtained by patterning a thick photoresist material and plating a material thereon. The metal pin may have a core member obtained by performing a plating process on the surface of a patterned polymer based pin. Solder or gold is used for adhesion and electric connection between the signal line and the metal pin. The above electric connection method can be simpler and have improved structural stability compared with the typical connection method.

Abstract: Provided are a high efficiency light emitting diode and a method for fabricating the same, in which a multi-layer reflector is laminated to a surface emission type light emitting diode to improve the efficiency of a light emitting diode. A high efficiency reflector is integrated on the light emitting diode using a dry etching process and a wet etching process. Although light produced from an active layer when applying a current thereto is emitted in several directions, the reflectors formed both sides of the active layer reflect the emitted light toward a surface of a semiconductor substrate, thus improving the light efficiency. Compared with the existing light emitting diode, the structure of the proposed light emitting diode is more efficient and therefore it can be used as a light source having low power consumption and high brightness. Also, the light emitting diode can be fabricated using the existing semiconductor process, thus reducing the complexity of the fabricating process.

Abstract: Provided is a three-dimensional aluminum package module including: an aluminum substrate; an aluminum oxide layer formed on the aluminum substrate and having at least one first opening of which sidewalls are perpendicular to an upper surface of the aluminum substrate; a semiconductor device mounted in the first opening using an adhesive; an organic layer covering the aluminum oxide layer and the semiconductor device; and a first interconnection line and a passive device circuit formed on the organic layer and the aluminum oxide layer.