Abstract: The present disclosure relates to a semiconductor device that includes a semiconductor substrate, a plurality of transistors disposed on the semiconductor substrate and each transistor including a gate electrode, a source electrode, and a drain electrode, a plurality of pads disposed on the semiconductor substrate and disposed at the outside of the plurality of transistors, a plurality of resistors disposed on the semiconductor substrate and electrically connected to the plurality of pads, respectively, and a plurality of upper metal layers disposed on the semiconductor substrate and configured to come into contact with the resistors. At least one of the plurality of resistors is an anti-resonance resistor that is disposed between two gate pads and is electrically connected to at least one gate pad of the two gate pads through the upper metal layer.

Abstract: The present invention relates to a semiconductor device. The semiconductor device according to an embodiment of the present invention includes a semiconductor substrate, a lower metal layer disposed under the semiconductor substrate and grounded, at least one transistor disposed on an upper portion of the semiconductor substrate, and at least one first through-via configured to pass through the semiconductor substrate and connected to the lower metal layer, wherein the transistor includes a gate electrode, a source electrode, and a drain electrode that are disposed on the semiconductor substrate, an inside of the at least one first through-via is filled with a conductive material, and the conductive material is electrically connected to the lower metal layer, and the at least one first through-via transfers heat generated in the transistor downward from the semiconductor substrate.

Abstract: A phase-synchronized RF power generator includes: an RF power amplifier for amplifying an RF power signal; a first directional coupler; an isolator for adjusting impedance mismatch generated by the first directional coupler, and transferring the RF power signal transferred by the first directional coupler to the output terminal; a second directional coupler for transferring part of the feedback signal transferred by the first directional coupler to be compared with a frequency of a reference signal provided by a crystal oscillator, and transferring rest of the feedback signal to a feedback loop; a digital phase shifter for adjusting a phase of the feedback signal transferred by the second directional coupler at predetermined intervals; an analog phase shifter for continuously adjusting the phase of the feedback signal discretely adjusted by the digital phase shifter; and a frequency comparator.

Abstract: A nozzle structure applying an RF heating device for a 3D printer, the structure includes: a nozzle unit for melting and discharging an inflowing material using heat transferred from the outside; a transfer unit for transferring the material to the nozzle unit; an RF nozzle heating unit for heating up the nozzle unit using a high frequency so that the material is melted in the nozzle unit; and a cooling unit for cooling down the heat discharged from the nozzle unit 100 to the outside.

Abstract: A lead frame for a hermetic RF chip package includes: a first capacitor unit formed of a conductive material in a rectangular shape having a width smaller than a length to receive an input of an RF signal applied to the package circuit; a first inductor unit connected to the first capacitor unit and formed of a conductive material in a rectangular shape having a width greater than a length; a second capacitor unit connected to the first inductor unit and formed of a conductive material in a rectangular shape having a width smaller than a length; and a second inductor unit connected to the second capacitor unit and formed of a conductive material in a rectangular shape having a width greater than a length to transfer an RF signal input through the first capacitor unit to the RF chip.

Abstract: An LC oscillator capable of temperature compensation includes a differential voltage supplier providing a positive differential voltage to a positive node and a negative differential voltage to a negative node and a differential oscillation frequency signal output unit outputting a positive oscillation frequency signal using the positive differential voltage provided to the positive node by the differential voltage supplier and a negative oscillation frequency signal using the negative differential voltage provided to the negative node by the differential voltage supplier.