Patents Assigned to Wavesquare Inc.
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Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
Patent number: 9502603Abstract: A method for manufacturing a vertically structured Group III nitride semiconductor LED chip includes a first step of forming a light emitting structure laminate; a second step of forming a plurality of separate light emitting structures by partially removing the light emitting structure laminate to partially expose the growth substrate; a third step of forming a conductive support, which conductive support integrally supporting the light emitting structures; a fourth step of separating the growth substrate by removing the lift-off layer; and a fifth step of dividing the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure. A first through-hole is formed to open in a central region of each of the light emitting structures such that at least the lift-off layer is exposed, and an etchant is supplied from the first through-hole in the fourth step.Type: GrantFiled: May 12, 2011Date of Patent: November 22, 2016Assignees: WAVESQUARE INC., DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang, Ryuichi Toba, Yoshitaka Kadowaki -
Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
Patent number: 9012935Abstract: A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon (“n” is a positive integer) having rounded corners.Type: GrantFiled: September 4, 2013Date of Patent: April 21, 2015Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang, Ryuichi Toba, Tatsunori Toyota, Yoshitaka Kadowaki -
Patent number: 8963290Abstract: The purpose of the present invention is to provide a good ohmic contact for an n-type Group-III nitride semiconductor. An n-type GaN layer and a p-type GaN layer are aequentially formed on a lift-off layer (growth step). A p-side electrode is formed on the top face of the p-type GaN layer. A copper block is formed over the entire area of the top face through a cap metal. Then, the lift-off layer is removed by making a chemical treatment (lift-off step). Then, a laminate structure constituted by the n-type GaN layer, with which the surface of the N polar plane has been exposed, and the p-type GaN layer is subjected to anisotropic wet etching (surface etching step). The N-polar surface after the etching has irregularities constituted by {10-1-1} planes. Then, an n-side electrode is formed on the bottom face of the n-type GaN layer (electrode formation step).Type: GrantFiled: December 28, 2010Date of Patent: February 24, 2015Assignees: Dowa Electronics Materials Co., Ltd., Wavesquare Inc.Inventors: Ryuichi Toba, Yoshitaka Kadowaki, Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang
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Vertically structured group III nitride semiconductor LED chip and method for manufacturing the same
Patent number: 8962362Abstract: A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon (“n” is a positive integer) having rounded corners.Type: GrantFiled: November 5, 2009Date of Patent: February 24, 2015Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang, Ryuichi Toba, Tatsunori Toyota, Yoshitaka Kadowaki -
VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME
Publication number: 20140319557Abstract: A method for manufacturing a vertically structured Group III nitride semiconductor LED chip includes a first step of forming a light emitting structure laminate; a second step of forming a plurality of separate light emitting structures by partially removing the light emitting structure laminate to partially expose the growth substrate; a third step of forming a conductive support, which conductive support integrally supporting the light emitting structures; a fourth step of separating the growth substrate by removing the lift-off layer; and a fifth step of dividing the conductive support between the light emitting structures thereby singulating a plurality of LED chips each having the light emitting structure. A first through-hole is formed to open in a central region of each of the light emitting structures such that at least the lift-off layer is exposed, and an etchant is supplied from the first through-hole in the fourth step.Type: ApplicationFiled: May 12, 2011Publication date: October 30, 2014Applicants: DOWA ELECTRONICS MATERIALS CO., LTD., WAVESQUARE INC.Inventors: Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang, Ryuichi Toba, Yoshitaka Kadowaki -
Publication number: 20140217457Abstract: There is provided a light-emitting element chip which can be safely assembled and a manufacturing method therefor. A light-emitting element chip 10 has a semiconductor layer 12 including a luminescent layer 12a on a supporting portion 11. The supporting portion 11 has a concave shape, providing a support substrate in this light-emitting element chip 10, and being connected to one electrode on the semiconductor layer 12. The outer peripheral portion of the supporting portion 11 (a supporting portion outer peripheral portion 11a) surrounds the semiconductor layer 12, and is protruded to be set at a level higher than the other face 12d and the n-side electrode 15 of the semiconductor layer 12.Type: ApplicationFiled: May 25, 2011Publication date: August 7, 2014Applicants: WAVESQUARE INC., DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang, Ryuichi Toba, Yoshitaka Kadowaki
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Publication number: 20140015105Abstract: The purpose of the present invention is to provide a good ohmic contact for an n-type Group-III nitride semiconductor. An n-type GaN layer and a p-type GaN layer are aequentially formed on a lift-off layer (growth step). A p-side electrode is formed on the top face of the p-type GaN layer. A copper block is formed over the entire area of the top face through a cap metal. Then, the lift-off layer is removed by making a chemical treatment (lift-off step). Then, a laminate structure constituted by the n-type GaN layer, with which the surface of the N polar plane has been exposed, and the p-type GaN layer is subjected to anisotropic wet etching (surface etching step). The N-polar surface after the etching has irregularities constituted by {10-1-1} planes. Then, an n-side electrode is formed on the bottom face of the n-type GaN layer (electrode formation step).Type: ApplicationFiled: December 28, 2010Publication date: January 16, 2014Applicants: WAVESQUARE INC., DOWA ELECTRONICS MATERIALS CO., LTD.Inventors: Ryuichi Toba, Yoshitaka Kadowaki, Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang
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VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME
Publication number: 20140001511Abstract: A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon (“n” is a positive integer) having rounded corners.Type: ApplicationFiled: September 4, 2013Publication date: January 2, 2014Applicants: DOWA ELECTRONICS MATERIALS CO., LTD., WAVESQUARE INC.Inventors: Meoung Whan CHO, Seog Woo LEE, Pil Guk JANG, Ryuichi TOBA, Tatsunori TOYOTA, Yoshitaka KADOWAKI -
VERTICALLY STRUCTURED GROUP III NITRIDE SEMICONDUCTOR LED CHIP AND METHOD FOR MANUFACTURING THE SAME
Publication number: 20120248458Abstract: A method for manufacturing vertically structured Group III nitride semiconductor LED chips includes a step of forming a light emitting laminate on a growth substrate; a step of forming a plurality of separate light emitting structures by partially removing the light emitting laminate to partially expose the growth substrate; a step of forming a conductive support on the plurality of light emitting structures; a step of lifting off the growth substrate from the plurality of light emitting structures; and a step of cutting the conductive support thereby singulating a plurality of LED chips each having the light emitting structure. The step of partially removing the light emitting laminate is performed such that each of the plurality of light emitting structures has a top view shape of a circle or a 4n-gon en” is a positive integer) having rounded corners.Type: ApplicationFiled: November 5, 2009Publication date: October 4, 2012Applicants: DOWA ELECTRONICS MATERIALS CO., LTD., WAVESQUARE INC.Inventors: Meoung Whan Cho, Seog Woo Lee, Pil Guk Jang, Ryuichi Toba, Tatsunori Toyota, Yoshitaka Kadowaki -
Patent number: 8124504Abstract: A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.Type: GrantFiled: January 21, 2010Date of Patent: February 28, 2012Assignees: Tohoku Techno Arch Co., Ltd., Furukawa Co., Ltd., Mitsubishi Chemical Corporation, Wavesquare Inc., Dowa Holdings Co., Ltd., Epivalley Co. Ltd.Inventors: Takafumi Yao, Meoung-Whan Cho
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Patent number: 8119499Abstract: A semiconductor substrate fabrication method according to the first aspect of this invention is characterized by including a preparation step of preparing an underlying substrate, a stacking step of stacking, on the underlying substrate, at least two multilayered films each including a peeling layer and a semiconductor layer, and a separation step of separating the semiconductor layer.Type: GrantFiled: August 24, 2006Date of Patent: February 21, 2012Assignees: Tohoku Techno Arch Co., Ltd., Furukawa Co., Ltd., Mitsubishi Chemical Corporation, Dowa Holdings Co., Ltd., Epivalley Co., Ltd., Wavesquare Inc.Inventors: Takafumi Yao, Meoung-Whan Cho
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Patent number: 7829435Abstract: A GaN-based thin film (thick film) is grown using a metal buffer layer grown on a substrate. (a) A metal buffer layer (210) made of, for example, Cr or Cu is vapor-deposited on a sapphire substrate (120). (b) A substrate obtained by vapor-depositing the metal buffer layer (210) on the sapphire substrate (120) is nitrided in an ammonia gas ambient, thereby forming a metal nitride layer (212). (c) A GaN buffer layer (222) is grown on the nitrided metal buffer layers (210, 212). (d) Finally, a GaN single-crystal layer (220) is grown. This GaN single-crystal layer (220) can be grown to have various thicknesses depending on the objects. A freestanding substrate can be fabricated by selective chemical etching of the substrate fabricated by the above steps. It is also possible to use the substrate fabricated by the above steps as a GaN template substrate for fabricating a GaN-based light emitting diode or laser diode.Type: GrantFiled: August 21, 2009Date of Patent: November 9, 2010Assignees: Tohoku Techno Arch Co., Ltd., Furukawa Co., Ltd., Mitsubishi Chemical Corporation, Dowa Holdings Co., Ltd., Epivalley Co., Ltd., Wavesquare Inc.Inventors: Takafumi Yao, Meoung-Whan Cho
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Patent number: D703862Type: GrantFiled: March 27, 2013Date of Patent: April 29, 2014Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki
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Patent number: D703863Type: GrantFiled: March 27, 2013Date of Patent: April 29, 2014Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki
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Patent number: D711581Type: GrantFiled: March 26, 2012Date of Patent: August 19, 2014Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki
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Patent number: D711582Type: GrantFiled: March 26, 2012Date of Patent: August 19, 2014Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki
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Patent number: D711583Type: GrantFiled: March 26, 2012Date of Patent: August 19, 2014Assignees: Wavesquare Inc., Dowa Electronics Materials Co., Ltd.Inventors: Meoung Whan Cho, Seog Woo Lee, Ryuichi Toba, Yoshitaka Kadowaki