Patents Assigned to Wedtech Corp.
  • Patent number: 4697570
    Abstract: An electronic ignition system for a magneto-operated internal combustion engine eliminates Zener diodes as nonlinear elements for control of the advance and employs a unilateral switch utilizing a diode feedback element to provide a logarithmic response for controlling a SCR which is thereby triggered into conduction to discharge a capacitor and fire a sparkplug.
    Type: Grant
    Filed: May 23, 1986
    Date of Patent: October 6, 1987
    Assignee: Wedtech Corp.
    Inventors: Dragos Ionescu, Mihai Soiman
  • Patent number: 4610237
    Abstract: An electronic ignition circuit for a magneto engine utilizes a nonlinear network which responds to the low voltage signal developed in the magneto to control an electronic switch triggering the discharge of a capacitor through a high voltage coil for firing the spark plug so that the system provides automatic advance by virtue of the shift in response to the magneto signal in the nonlinear circuit.
    Type: Grant
    Filed: February 21, 1985
    Date of Patent: September 9, 1986
    Assignee: Wedtech Corp.
    Inventors: Dragos Ionescu, Mihai Soiman
  • Patent number: 4609564
    Abstract: Complex shapes are coated with material at least in part evaporated from an elongated electrode shaped to conform to the substrate and juxtaposed therewith over the length of the electrode. An arc is struck at one end and depositions occur over a surface of the electrode which recedes from the arc. The other end of the electrode is heated to maintain the electrode during deposition at a constant temperature.
    Type: Grant
    Filed: May 13, 1983
    Date of Patent: September 2, 1986
    Assignee: Wedtech Corp.
    Inventor: Eduard Pinkhasov
  • Patent number: 4596719
    Abstract: The adhesion of conductive layers to ceramic substrates in the application of such layers by low-energy techniques is improved by interposing between the high-conductivity metal layer and the substrate a layer of refractory metal which is preferably also applied by low-energy vaporization. The metal layers can be provided in succession by reversing the polarity of electrodes composed of the metals of these layers which strike an arc vaporizing the metal to be deposited. One of the electrodes can be shifted out of position and replaced by a substitute electrode and the process repeated to deposit a further layer of metal from the substitute electrode on the substrate.
    Type: Grant
    Filed: November 2, 1984
    Date of Patent: June 24, 1986
    Assignee: Wedtech Corp.
    Inventor: Eduard Pinkhasov
  • Patent number: 4575401
    Abstract: High-purity silicon bars can be produced by electrically melting a portion of a mass of silicon granules in a crystal so that the mass around the melt isolates the melt from the crucible wall and thereby prevents contamination of the melt from the crucible and softening of the crucible wall by the melting heat. The current flow is promoted by the heating of the silicon granules and/or electrodes and a seed can be lowered into the melt so that a bar can be withdrawn therefrom for cutting up into wafers for use in the production of semiconductors.
    Type: Grant
    Filed: June 7, 1984
    Date of Patent: March 11, 1986
    Assignee: Wedtech Corp
    Inventor: Eduard Pinkhasov
  • Patent number: 4569733
    Abstract: Rock is melted between electrodes and the resulting melt is subjected to electrolysis to recover oxygen and selected metals therefrom and to produce a melt of a unique composition so that it can be cast to produce structures with various properties.
    Type: Grant
    Filed: July 20, 1984
    Date of Patent: February 11, 1986
    Assignee: Wedtech Corp.
    Inventor: Eduard Pinkhasov
  • Patent number: 4569307
    Abstract: An apparatus for producing high purity silicon melts utilizes a solid silicon body which is drilled to provide bores into which electrodes are inserted. The electrodes preferably are also of silicon and an electric arc-current is passed through the electrodes to generate an arc which melts out the body to define a cavity therein containing the melt. The melt may be used for the drawing of a silicon bar or for the deposition of silicon in vapor form from the melt upon a substrate in a vacuum chamber.
    Type: Grant
    Filed: March 29, 1985
    Date of Patent: February 11, 1986
    Assignee: Wedtech Corp.
    Inventor: Eduard Pinkhasov
  • Patent number: 4565711
    Abstract: A silicon crucible for use in holding a silicon melt in the drawing of silicon bars for the production of silicon wafers in the semiconductor industry is provided with a protective coating, e.g. of silicon nitride, by the use of a vapor generator in which granules of a low electrical conductivity and low thermal conductivity material are disposed between a pair of electrodes and an electric current is supplied with induces localized vaporization from the granules at their contact points but without bodily melting the granules. Nitrogen can be applied to the mass as a carrier gas and to react with the silicon vapor thus formed.
    Type: Grant
    Filed: June 29, 1984
    Date of Patent: January 21, 1986
    Assignee: Wedtech Corp.
    Inventor: Eduard Pinkhasov
  • Patent number: 4548670
    Abstract: A high-purity method of forming a silicon melt utilizes a solid silicon body which is drilled to provide bores into which electrodes are inserted. The electrodes preferably are also of silicon and an electric arc-current is passed through the electrodes to generate an arc which melts out the body to define a cavity therein containing the melt. The melt may be used for the drawing of a silicon bar or for the deposition of silicon in vapor form from the melt upon a substrate in a vacuum chamber.
    Type: Grant
    Filed: July 20, 1984
    Date of Patent: October 22, 1985
    Assignee: Wedtech Corp.
    Inventor: Eduard Pinkhasov
  • Patent number: 4537794
    Abstract: The adhesion of conductive layers to ceramic substrates in the application of such layers by low-energy techniques is improved by interposing between the high-conductivity metal layer and the substrate a layer of a refractory metal which is preferably also applied by low-energy vaporization. The metal layers can be provided in succession by reversing the polarity of electrodes composed of the metals of these layers which strike an arc vaporizing the metal to be deposited.
    Type: Grant
    Filed: June 29, 1984
    Date of Patent: August 27, 1985
    Assignee: Wedtech Corp.
    Inventor: Eduard Pinkhasov
  • Patent number: 4505948
    Abstract: Quartz crucibles for the melting of silicon and ceramic substrates are coated with protective materials or metals at least in part evaporated from an electrode with which an arc is struck at low voltage and current to deposit material from the electrode on the substrate in a vacuum chamber. The electrode may be heated and the substrate may be sandblasted and preheated.
    Type: Grant
    Filed: May 25, 1984
    Date of Patent: March 19, 1985
    Assignee: Wedtech Corp.
    Inventor: Eduard Pinkhasov