Patents Assigned to WEEN
  • Patent number: 11264450
    Abstract: The embodiments of the invention provides a semiconductor device and a method for manufacturing it The semiconductor device provided by the embodiments of the invention comprises: a first electrode layer; a substrate layer positioned on the first electrode layer; an epitaxy layer positioned on the substrate layer and comprising a first surface far from the substrate layer; a plurality of well regions disposed by extending from the first surface into the epitaxy layer and orthographic projections thereof on the first surface are spaced from each other; a second electrode layer, comprising first metal layers, each disposed between adjacent two of the well regions on the first surface and forms a Schottky contact with the epitaxy layer, wherein the Schottky contact has variable barrier height. The semiconductor device provided by the embodiments of the invention may improve the forward conduction ability without affecting the reverse blocking ability.
    Type: Grant
    Filed: August 21, 2019
    Date of Patent: March 1, 2022
    Assignee: WeEn Semiconductors Technology Co., Ltd.
    Inventors: Jingjing Cui, Eddie Huang, Jianfeng Zhang
  • Publication number: 20210335996
    Abstract: The embodiments of the invention provides a semiconductor device and a method for manufacturing it The semiconductor device provided by the embodiments of the invention comprises: a first electrode layer; a substrate layer positioned on the first electrode layer; an epitaxy layer positioned on the substrate layer and comprising a first surface far from the substrate layer; a plurality of well regions disposed by extending from the first surface into the epitaxy layer and orthographic projections thereof on the first surface are spaced from each other; a second electrode layer, comprising first metal layers, each disposed between adjacent two of the well regions on the first surface and forms a Schottky contact with the epitaxy layer, wherein the Schottky contact has variable barrier height. The semiconductor device provided by the embodiments of the invention may improve the forward conduction ability without affecting the reverse blocking ability.
    Type: Application
    Filed: August 21, 2019
    Publication date: October 28, 2021
    Applicant: WeEn Semiconductors Technology Co., Ltd.
    Inventors: Jingjing CUI, Eddie HUANG, Jianfeng ZHANG
  • Patent number: 10012404
    Abstract: The invention relates to a method for adjusting temperatures of a built structure provided with a thermal adjustment system configured to adjust the built structure to a predetermined living temperature. Said method includes implementing, via a data processing module, the steps of: (a) detecting absence of a user, (b) sending, to said system, a limiting instruction whereby said system interrupts adjustment to the living temperature; (c) estimating a return travel time of the user on the basis of geolocation data; (d) determining a return temperature on the basis of a comfort temperature, different from the living temperature, and on the basis of the return travel time, the return temperature allowing said system to reach the comfort temperature during the return travel time; and (e) sending, to said system, a return instruction whereby said system adjusts to the return temperature.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: July 3, 2018
    Assignee: WEEN
    Inventors: Nathanael Munier, Jean-Laurent Schaub
  • Patent number: D962738
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: September 6, 2022
    Assignee: U-WEEN ENTERPRISE CO., LTD.
    Inventor: Yi-Ko Lin