Abstract: A trench MOSFET with trench contact holes and a method for fabricating the same are disclosed. The MOSFET includes an N type substrate, an N type epitaxial layer on the substrate; a P well region on top of the epitaxial layer; a source region formed on the P well region; an oxide layer on the source region; a plurality of trenches which traverse the source region and the P well region and contact the epitaxial layer; a gate oxide layer and polysilicon formed in the trenches; a source contact hole and a gate contact hole, wherein the source contact hole and the gate contact hole have a titanium metal layer, a titanium nitride layer, and tungsten metal sequentially, respectively; a P+ implanted region; a source electrode formed above the source contact hole and a gate electrode formed above the gate contact hole.
Type:
Grant
Filed:
June 4, 2010
Date of Patent:
April 15, 2014
Assignee:
Will Semiconductor Ltd.
Inventors:
Gang Ji, Jianping Gu, Kaibin Ni, Tianbing Zhong
Abstract: A trench MOSFET with trench contact holes and a method for fabricating the same are disclosed. The MOSFET includes an N type substrate, an N type epitaxial layer on the substrate; a P well region on top of the epitaxial layer; a source region formed on the P well region; an oxide layer on the source region; a plurality of trenches which traverse the source region and the P well region and contact the epitaxial layer; a gate oxide layer and polysilicon formed in the trenches; a source contact hole and a gate contact hole, wherein the source contact hole and the gate contact hole have a titanium metal layer, a titanium nitride layer, and tungsten metal sequentially, respectively; a P+ implanted region; a source electrode formed above the source contact hole and a gate electrode formed above the gate contact hole.
Type:
Application
Filed:
June 4, 2010
Publication date:
April 19, 2012
Applicant:
WILL SEMICONDUCTOR LTD.
Inventors:
Gang Ji, Jianping Gu, Kaibin Ni, Tianbing Zhong