Abstract: A method for forming a bump of a probe card is disclosed. In accordance with the method, a bump having a high aspect ratio for supporting a probe tip and a probe beam is formed using a semiconductor substrate as a mold eliminating a need for a photoresist film.
Abstract: A method for manufacturing a probe structure is disclosed. In accordance with the method, two semiconductor substrates having different crystal directions are bonded and selectively etched utilizing an etch selectivity due to the different crystal directions to form a probe tip region and a probe beam region. A cantilever structure for a probe card is formed by filling the probe tip region and the probe beam region with a conductive material.
Type:
Grant
Filed:
July 25, 2007
Date of Patent:
November 2, 2010
Assignee:
Will Technology Co., Ltd.
Inventors:
Bong Hwan Kim, Bum Jin Park, Jong Bok Kim, Chi Woo Lee
Abstract: A method for manufacturing a cantilever structure of a probe card is disclosed. In accordance with the method of the present invention, a first sacrificial wafer is used as a mold to form a cantilever structure having various shapes, a microscopic pitch and a high aspect ratio. In accordance with the method of the present invention, a probe tip may be formed by using a second sacrificial substrate and a bonding.
Abstract: A method for manufacturing a bump of a probe card is disclosed. In accordance with the present invention, the bump has a high aspect ratio, a high elasticity, a high durability suitable for testing a high speed device. The bump is formed using a sacrificial substrate as a mold to have a shape of ? or II for elasticity and durability.