Abstract: An integrated MEMS pressure sensor is provided, including, a CMOS substrate layer, an N+ implant doped silicon layer, a field oxide (FOX) layer, a plurality of implant doped silicon areas forming CMOS wells, a two-tier polysilicon layer with selective ion implantation forming a membrane, including an implant doped polysilicon layer and a non-doped polysilicon layer, a second non-doped polysilicon layer, a plurality of implant doped silicon areas forming CMOS source/drain, a gate poly layer made of polysilicon forming CMOS transistor gates, said CMOS wells, CMOS transistor sources/drains and CMOS gates forming CMOS transistors, an oxide layer embedded with an interconnect contact layer, a plurality of metal layers interleaved with a plurality of via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. N+ implant doped silicon layer and implant doped/un-doped composition polysilicon layer forming a sealed vacuum chamber.

Abstract: An integrated MEMS microphone is provided, including, a bonding wafer layer, a bonding layer, an aluminum layer, CMOS substrate layer, an N+ implant doped silicon layer, a field oxide (FOX) layer, a plurality of implant doped silicon areas forming CMOS wells, a two-tier polysilicon layer with selective ion implantation forming a diaphragm, a plurality of implant doped silicon areas forming CMOS source/drain, a gate poly layer forming CMOS transistor gates, said CMOS wells, said CMOS transistor sources/drains and said CMOS gates forming CMOS transistors, an oxide layer embedded with an interconnect contact layer, a plurality of metal layers interleaved with a plurality of via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. Diaphragm is sandwiched between a small top chamber and a small back chamber, and substrate layer includes a large back chamber.

Abstract: A compact MEMS motion sensor device is provided, including a CMOS substrate layer, with plural anchor posts having an isolation oxide layer surrounding a conductive layer. On one side of the CMOS substrate layer, the device further includes a field oxide (FOX) layer, a first set and a second set of implant doped silicon areas, a first polysilicon layer, an oxide layer embedded with plural metal layers interleaved with via hole layers, a Nitride deposition layer, an under bump metal (UBM) layer and a plurality of solder spheres. On the other side of the CMOS substrate layer, it further includes a backside interconnect isolation oxide layer, a first MEMS bonding layer, a first metal compound layer, a second MEMS bonding layer, a MEMS layer, a first MEMS eutectic bonding layer, a second metal compound layer, a second MEMS eutectic bonding layer, and a MEMS cap layer.

Abstract: An apparatus for converting MEMS inductive capacitance to digital is provided, for converting the induced analog voltage of MEMS element into digital signal. The apparatus includes an ADC, a reference voltage circuit and a controller. With the integral circuit and the comparator of the ADC and the reference voltages generated by the reference voltage circuit, the apparatus of the present invention uses the switch signals generated by the controller to generate digital signals. The present invention can also be integrated with MEMS element into a single chip to achieve single-chip MEMS.

Abstract: A direct capacitance-to-digital converter is provided, including a plurality of switches, an ADC, a reference voltage circuit and a trigger unit. By using trigger unit to control a plurality of switches, and combining the reference voltages outputted by the reference voltage circuit, the converter can directly sense the external to-be-measured capacitor and related stray capacitor, and directly convert the capacitance of the to-be-measured capacitor into accurate digital signal. The present invention can be integrated with other sensors into a single chip to form an integrated direct capacitance-to-digital converter.

Abstract: The invention provides a MEMS package including: a MEMS chip including a first surface, a second surface, a first cavity, and a sensing device, the sensing device defining a first end of the first cavity; a leadframe including a second cavity and being electrically connected to the first surface of the MEMS chip, the second cavity being adjacent to the sensing device of the MEMS chip; a conductive layer disposed on the second surface of the MEMS chip to define a second end of the first cavity and grounded via the leadframe that is electrically connected to the conductive layer so as to provide electromagnetic shielding to the MEMS chip; and an encapsulant covering the MEMS chip, the leadframe, and the conductive layer to define an shape of the MEMS package and allowing outer surfaces of the leadframe to emerge from the MEMS package.