Abstract: Systems and methods to implement a USB and Thunderbolt optical signal transceiver are described. One method includes detecting presence of a USB sideband signal received over an optical communication channel and associated with a USB communication request. Responsive to the detecting, the method may determine that the USB communication request corresponds to a USB communication mode and perform a sideband negotiation. The USB communication mode may be enabled. A specified number of channels associated with the USB communication request may be determined. USB communication may be performed using the specified number of channels over the optical communication channel in the USB communication mode.

Abstract: Systems and methods to implement a USB and Thunderbolt optical signal transceiver are described. One method includes detecting presence of a USB sideband signal received over an optical communication channel and associated with a USB communication request. Responsive to the detecting, the method may determine that the USB communication request corresponds to a USB communication mode and perform a sideband negotiation. The USB communication mode may be enabled. A specified number of channels associated with the USB communication request may be determined. USB communication may be performed using the specified number of channels over the optical communication channel in the USB communication mode.

Abstract: Systems and methods to transmit audio-video signals over an optical communication channel are described. One aspect includes receiving a plurality of audio-video electrical signals at an optical transmitter. The optical transmitter may also receive a plurality of out-of-band electrical signals. The optical transmitter may collectively modulate the audio-video electrical signals to generate a composite electrical signal. In one aspect, the optical transmitter bias current-modulates a bias current level of the composite electrical signal using the electrical out-of-band signals, and generates a modulated electrical signal based on the bias current-modulating. The optical transmitter may convert the modulated electrical signal into a modulated optical signal using a laser diode, and transmit the modulated optical signal to an optical receiver over an optical communication channel.

Abstract: Optical fiber interconnection systems and methods are described. One aspect includes receiving a pulse-amplitude modulated (PAM4) electrical signal at a transmitter for transmission to a receiver. The PAM4 electrical signal is decoded into a pair of non-return-to-zero (NRZ) electrical signals. The pair of NRZ electrical signals is converted into a corresponding pair of NRZ optical signals including a first NRZ optical signal and a second NRZ optical signal. The first NRZ optical signal is transmitted to a receiver over an communication channel. The second NRZ optical signal is transmitted to the receiver over the optical communication channel.

Abstract: Voltage converter systems and methods are described. One aspect includes extracting energy from one or more data lines. A feedback voltage is derived from the extracted energy. Responsive to the value of the feedback voltage being less than a reference voltage value, a waveform modulation controller is switched to a pulse-frequency modulation (PFM) mode. Subsequent to switching the waveform modulation controller to the PFM mode, additional energy is extracted from the one or more digital data lines. Another feedback voltage is derived from the additional extracted energy. Responsive to the value of other feedback voltage being greater than the reference voltage value, the waveform modulation controller is further switched from the PFM mode to a pulse-skipping modulation (PSM) mode.

Abstract: Systems and methods for HDMI signal communication over an optical communication link are described. One aspect includes receiving an HDMI control signal from an HDMI master device, and another HDMI control signal from an HDMI sink terminal via a communication resources. The method identifies half-duplex communication resource contention between the HDMI control signal and the other HDMI control signal, and transitions a communication direction of the half-duplex communication resources to give the HDMI control signal precedence over the other HDMI control signal. Subsequent to transitioning the communication direction, the method transfers the HDMI control signal to the HDMI sink terminal via the communication resources. Subsequent to transferring the HDMI control signal, the method again transitions the direction of the half-duplex communication resources, and transfers the other HMDI control signal to the HDMI master device.

Abstract: A single-channel high-speed low-power-consumption optical transceiver chip is provided, which comprises an optical transmitter module, an optical receiver module, and a common module, wherein the optical transmitter module comprises a data buffer, a first clock and data recovery unit, a first data selector, a laser driver, a power controller, a first clock buffer, a light-emitting diode, and a first photodiode; the optical receiver module comprises a second photodiode, a direct-current bias module, a transimpedance amplifier, a feedback resistor, a second clock and data recovery unit, a second clock buffer, a second data selector, and an output driver; the common module comprises a power supply controller, a direct-current bias, a logic controller, a serial interface, a memory, and a pseudo random data generator and checker; and the common module also provides a communication loop for the optical transmitter module and the optical receiver module.

Abstract: Provided is an anti-interference semiconductor device for an optical transceiver. The semiconductor device includes: a back metallization layer, a p++ bearing wafer layer, a P-type epitaxial layer, an isolation layer and a metal layer arranged from bottom to top. The back metallization layer serves as a substrate, on which the p++ bearing wafer layer is formed. The P-type epitaxial layer is formed on the p++ bearing wafer layer. The metal layer is formed on the isolation layer. The semiconductor device includes at least two N-type heavily doped grooves, two P-type heavily doped grooves and a plurality of deep through-silicon vias, which are formed in the P-type epitaxial layer and the isolation layer. The deep through-silicon vias are distributed and divided into at least two rows. The N-type heavily doped grooves and the P-type heavily doped grooves are alternately arranged at two sides of the deep through-silicon vias.