Abstract: The present invention is for providing a method for designing an SAW resonator and a computing device-readable recording medium on which the method is recorded, wherein, instead of directly measuring characteristics of SAW of the SAW resonator, a 4-port transmission line model for an SAW IDT electrode is established, and parameters of the 4-port transmission line model are calculated by using an initial parameter measured from a sample of the SAW resonator, thereby configuring an SAW filter over a wide frequency band from hundreds of MHz to several GHz.

Abstract: The present invention relates to a SAW resonator design method, a SAW filter and a design method therefor, and a computing device-readable recording medium having same recorded thereon, which may improve a quality factor of the SAW resonator by designing a structure, such as an input IDT finger, an output IDT finger, and an interval between fingers in an IDT electrode of the SAW resonator under optimal conditions without changing a material of the SAW resonator or changing a manufacturing process, and may obtain reduced insertion loss and improved frequency characteristics by configuring the SAW filter by using the SAW resonator described above.

Abstract: The present invention provides a method for design acoustic wave RF filter robust against variations of frequency response in passband by resonance frequency modulation of IDT enabling to improve the skirt characteristics in the passband of the filter by resonance frequency modulation with respect to the IDT electrodes of the resonators constituting the acoustic wave filter and determining the design parameters for the IDT electrodes based on the resonance frequency modulation so as to compensate for variations in frequency response due to effects of temperature variations as well as other factors.

Abstract: An acoustic wave element having reflectors providing capacitance according to the present invention further improves skirt characteristics of the acoustic wave element steeply by configuring the reflector structure of the acoustic wave element such as a SAW resonator, a composite resonator, and DMS as a capacitive reflector structure so that the parallel resonance frequency can be shifted toward the series resonance frequency without additional capacitors connected to the acoustic wave element while maintaining the area.

Abstract: The present invention relates to a SAW resonator design method, a SAW filter and a design method therefor, and a computing device-readable recording medium having same recorded thereon, which may improve a quality factor of the SAW resonator by designing a structure, such as an input IDT finger, an output IDT finger, and an interval between fingers in an IDT electrode of the SAW resonator under optimal conditions without changing a material of the SAW resonator or changing a manufacturing process, and may obtain reduced insertion loss and improved frequency characteristics by configuring the SAW filter by using the SAW resonator described above.

Abstract: The present invention provides a method for design acoustic wave RF filter robust against variations of frequency response in passband by resonance frequency modulation of IDT enabling to improve the skirt characteristics in the passband of the filter by resonance frequency modulation with respect to the IDT electrodes of the resonators constituting the acoustic wave filter and determining the design parameters for the IDT electrodes based on the resonance frequency modulation so as to compensate for variations in frequency response due to effects of temperature variations as well as other factors.

Abstract: An arrangement for reducing interference between circuit blocks having differences in the amount of input power and phase differences includes isolation wires located between the circuit blocks and connected to a ground.

Abstract: A broadband power amplifier is embodied by realizing a substantially two-section output matching circuit or a substantially two-section input matching circuit using a quarter wave transformer itself as the input matching circuit or the output matching circuit. The broadband power amplifier is advantageous in view of integration and miniaturization due to the low characteristic impedance of the quarter wave transformer and enables both reduction of sizes of chips and circuits due to its simple circuit structure and reduction in cost due to the reduced number of passive devices.

Abstract: The present invention relates to a power amplifier; and, more particularly, to a Doherty power amplifier. The power amplifier includes at least one carrier amplifier; at least one peaking amplifier arranged in parallel with the carrier amplifier in such a manner that the carrier amplifier and the peaking amplifier collectively operate as a Doherty amplifier; a plurality of input matching circuits, at least one of which is respectively connected to an input ends of the carrier amplifier and the peaking amplifier; at least one impedance control circuit, each of which is connected to an output end of each carrier amplifier for controlling a load line impedance of the said each carrier amplifier; at least one output matching circuit directly or indirectly connected to output ends of the impedance control circuit and the peaking amplifier; and at least one first delay circuit for matching delays between the carrier amplifier and the peaking amplifier.

Abstract: An arrangement for reducing interference between circuit blocks having differences in the amount of input power and phase differences includes isolation wires located between the circuit blocks and connected to a ground.

Abstract: A broadband power amplifier is embodied by realizing a substantially two-section output matching circuit or a substantially two-section input matching circuit using a quarter wave transformer itself as the input matching circuit or the output matching circuit. The broadband power amplifier is advantageous in view of integration and miniaturization due to the low characteristic impedance of the quarter wave transformer and enables both reduction of sizes of chips and circuits due to its simple circuit structure and reduction in cost due to the reduced number of passive devices.