Abstract: Methods for the prevention and/or alleviation of androgen-mediated disorders treatable by administering a chroman-derived anti-androgen compound are provided by the present invention. The invention further provides pharmaceutical and nutraceutical compositions containing chroman-derived anti-androgen compounds useful in the prevention and/or alleviation of androgen-mediated disorders, particularly prostate cancer.

Abstract: A resonant tunneling diode is produced in a gallium arsenide material system formed with barrier layers of AlGaAs with a quantum well layer of low band-gap material between them. The material of the well is selected to adjust the second energy level to the edge of the conduction band in GaAs, with a preferred quantum well layer formed of InGaAs. The resonant tunneling diode structure is grown by a metal organic chemical vapor deposition process on the surface of the nominally exact (100) GaAs substrate. Layers of doped GaAs may be formed on either side of the multilayer resonant tunneling diode structure, and spacer layers of GaAs may also be provided on either side of the barrier layers to reduce the intrinsic capacitance of the structure.

Abstract: An active drive circuit for high power IGBTs provides optimized switching performance for both turn-on and turn-off by incorporating a three-stage action to improve performance characteristics. The gate drive circuit includes a semiconductor switch such as a MOSFET connected in series with a low resistance gate turn-on resistor between the supply line and the gate input line, and a parallel connected bipolar transistor. During the first and third stages of turn-on, the MOSFET switch is turned on to provide rapid charging of the gate, whereas during the second stage the bipolar transistor is turned on to provide a controlled level of current charging of the gate. Similarly, a switch such as an MOSFET is connected in series with a low resistance gate turn-off resistor between the turn-off supply voltage line and the gate input line, and a bipolar transistor is connected in parallel therewith across the supply line and the gate input line.