Abstract: Provided is an electromagnetic wave shielding sheet, a flexible printed circuit board attached with the electromagnetic wave shielding sheet, and a manufacturing method thereof. The flexible printed circuit board attached with the electromagnetic wave shielding sheet comprises: an electromagnetic wave shielding sheet including a nonwoven fabric having a plated surface and including an adhesive layer adsorbed therein without containing conductive particles, and a nonwoven fabric layer including a first insulating layer formed on the nonwoven fabric; and a flexible printed circuit board attached with the electromagnetic wave shielding sheet, wherein the flexible printed circuit board includes: a base film having a wiring pattern and a ground pattern formed on one side; and a second insulating layer covering the wiring pattern and exposing the ground pattern, and the nonwoven fabric layer having the adhesive layer adsorbed therein is in direct contact with the ground pattern.

Abstract: A surface acoustic wave (SAW) device including resonators formed on piezoelectric substrates of different heights and a method for manufacturing the same are provided. The SAW device includes: a support substrate; a piezoelectric substrate disposed on the support substrate and including a first region, a second region, and a step region disposed between the first and second regions; a first resonator formed on the first region of the piezoelectric substrate; a second resonator formed on the second region of the piezoelectric substrate; and a bus bar formed on the step region of the piezoelectric substrate. The piezoelectric substrate has different thicknesses between the first and second regions, and a surface of the step region connecting the first and second regions forms an angle of 60 degrees or less with the top surface of the first or second region.

Abstract: The present disclosure relates to an elastic wave device and a method of manufacturing the same. The elastic wave device according to one embodiment comprises: a support substrate having a first surface; a piezoelectric substrate having a second surface adjacent to or in contact with the first surface of the support substrate forming a cavity defined by the space, and a third surface opposite the second surface; a first adhesive layer disposed between the support substrate and the piezoelectric substrate, forming a bonding interface to bond the first surface and the second surface; a second adhesive layer formed on at least one of the first surface and the second surface where the bonding interface is not formed, and exposed within the cavity; and an IDT electrode formed on the third surface, and a thickness of the first adhesive layer is greater than a thickness of the second adhesive layer.

Abstract: The present invention relates to an elastic wave device and a method of manufacturing the same, wherein the elastic wave device according to one embodiment comprises: a piezoelectric substrate having a first surface and a second surface; a support substrate having a third surface adjacent or in contact with the first surface to form a cavity defined by a space; a first adhesive layer disposed between the support substrate and the piezoelectric substrate, forming a bonding interface to join the first surface and the third surface; a second adhesive layer formed on at least one of the third surface and the first surface, which are surfaces where the bonding interface is not formed, the second adhesive layer being exposed within the cavity; and an IDT electrode formed on the second surface, and wherein a thickness of the first adhesive layer is greater than that of the second adhesive layer.

Abstract: An acoustic wave device for suppressing spurious waves in Lamb waves, and a filter including the same, are provided. The acoustic wave device comprises a support substrate; a piezoelectric substrate supported by the support substrate and defining a first resonator region; and a first resonator and a second resonator disposed in the first resonator region, each comprising a plurality of interdigital transducer (IDT) electrodes and electrically connected to each other. The support substrate includes a first cavity formed beneath the first resonator and a second cavity formed beneath the second resonator, wherein the first cavity and the second cavity are interconnected within the support substrate.

Abstract: A surface acoustic wave device having an electrode structure with improved nonlinearity, a filter including the same, and a method for manufacturing the surface acoustic wave device are provided. The surface acoustic wave device comprises a piezoelectric substrate and a plurality of IDT electrodes formed on the piezoelectric substrate, wherein each of the plurality of IDT electrodes comprises a lower electrode formed on a surface of the piezoelectric substrate and an upper electrode formed on the lower electrode, and wherein the lower electrode has a hardness of 12 GPa to 16 GPa.

Abstract: A surface acoustic wave wafer level package includes a substrate, an interdigital transducer (IDT) formed on the substrate, a sidewall formed on the substrate along a periphery of the IDT, a cover formed above the sidewall and the IDT to form a hollow above the IDT with the sidewall, a connection electrode formed on the substrate and extending outward from a periphery of the sidewall, a connection terminal electrically connected to a part of the connection electrode which extends outward from the periphery of the sidewall, and an organic solderability preservative coating layer formed on at least a top surface of the connection terminal.

Abstract: A method of manufacturing a bulk acoustic wave (BAW) resonator according to an embodiment of the present invention may include: forming a lower electrode above a substrate; forming a nitrogen layer on an upper surface of the lower electrode through nitrogen (N2) plasma surface treatment; forming a piezoelectric layer made of an AlScN material above the nitrogen layer to align an upper surface of the piezoelectric layer to an N polarity; and forming an upper electrode above the piezoelectric layer aligned to the N polarity.

Abstract: Provided is a method of manufacturing a piezoelectric substrate for SAW resonators with improved resonance characteristics and a piezoelectric substrate for SAW resonators manufactured by this method. The manufacturing method of a piezoelectric substrate for a SAW resonator includes preparing a laminated substrate, and heat-treating the laminated substrate to reduce the gas contained in at least one layer of the laminated substrate.

Abstract: Provided is a resonator with a common reflector, and more specifically, to a resonator with a common reflector in a surface acoustic wave (SAW) device having multiple resonators, where a reflector of one resonator is shared with the reflector of another resonator. By forming a common reflector, the area required for resonator formation on the substrate can be reduced.

Abstract: Disclosed is an acoustic resonator including a substrate including a first cavity, a first electrode formed above the substrate, a piezoelectric layer formed on one surface of the first electrode, and a second electrode formed on one surface of the piezoelectric layer. Here, the piezoelectric layer includes a longitudinal section not to cover a longitudinal section of the first electrode. Also, the second electrode covers the longitudinal section of the piezoelectric layer and extends to a first interpolar cavity which spaces the first electrode at least partially apart from the piezoelectric layer. A quality factor may be increased by fixing an increase in resistance which occurs due to thin film electrodes.

Abstract: A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance includes: a first substrate having a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and first bonding pads connected to the bottom electrodes or the top electrodes of the FBARs; and a second substrate having a plurality of vias passing therethrough, second bonding pads located on one end surface of the vias facing the first substrate, and external connection pads located on the other end surface of the vias which does not face the first substrate, wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads.

Abstract: A surface acoustic wave (SAW) device according to the present invention includes: a substrate; an intermediate layer formed on an upper surface of the substrate; a piezoelectric layer formed on an upper surface of the intermediate layer; and an inter-digital transducer (IDT) electrode formed on an upper surface of the piezoelectric layer to generate a SAW, wherein an upper portion of the substrate is deformed by a predetermined thickness by ion implantation to form an ion trap layer and the intermediate layer is formed on an upper surface of the ion trap layer.

Abstract: Disclosed is a film bulk acoustic resonator (FBAR) including a substrate, a lower electrode formed above the substrate, a piezoelectric layer formed above the lower electrode, an upper electrode formed above the piezoelectric layer, and a first protection layer formed above the upper electrode. Here, the first protection layer covers the upper electrode while extending downward along a side surface of one end of the upper electrode to cover a certain area of the piezoelectric layer.

Abstract: Provided is an acoustic resonator including: a substrate including a first cavity; a first electrode formed above the substrate; a piezoelectric layer formed on one surface of the first electrode; and a second electrode formed on one surface of the piezoelectric layer, wherein the first electrode and the piezoelectric layer include an overlapping area that corresponds to a first end and a second end of the first cavity, the first electrode has a termination surface formed as an inclined surface of a first acute angle ?1 outside the overlapping area with respect to the second end of the first cavity, the piezoelectric layer is formed to include a first air bridge area that has a second cavity and is formed between the piezoelectric layer and the first electrode in a vertical direction and between the second end of the first cavity and the termination surface in a horizontal direction.

Abstract: An air-gap type film bulk acoustic resonator (FBAR) according to the present invention may include: a substrate comprising an air gap portion on an upper surface thereof; a lower electrode formed on the substrate; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a protective layer formed on the upper electrode; and a beam structure extended in a dome shape from one side of the upper electrode to define a space portion between the upper electrode and the piezoelectric layer, wherein one end of the beam structure is in contact with the piezoelectric layer.

Abstract: Disclosed is an air-gap type film bulk acoustic resonator (FBAR) including a substrate including an air-gap portion on a top surface, a lower electrode having a polygonal plate shape above the substrate and configured to surround a top of the air-gap portion, a piezoelectric layer formed above the lower electrode, and an upper electrode formed above the piezoelectric layer. Here, the lower electrode includes an electrode non-deposited area formed between one side plate boundary surface of the polygonal plate and one side air-gap boundary surface of the air-gap portion to expose one part of a top of the air-gap portion.

Abstract: A resonator includes: interdigital transducer (IDT) including first electrode including first base on piezoelectric substrate and extended in reference direction, and first protrusions connected to the first base and extended in direction intersecting with the reference direction, and second electrode including second base on the piezoelectric substrate and extended in the reference direction, and second protrusions connected to the second base and extended in direction intersecting with the reference direction, each of the second protrusions extended to have one of the first protrusions inserted between the second protrusion and another second protrusion adjacent to the second protrusion, wherein a width of each of first specific protrusions included between one end of the IDT and first position at first distance from the one end, among the first protrusions and the second protrusions, decreases from first specific protrusion closest to the first position toward first specific protrusion closest to the one e

Abstract: A double mode SAW (DMS) filter includes: a plurality of interdigital transducers (IDTs), each having a plurality of Type 1 electrode fingers and a plurality of Type 2 electrode fingers formed on a piezoelectric substrate, wherein one Type 2 electrode finger among the plurality of Type 2 electrode fingers is disposed between two adjacent Type 1 electrode fingers among the plurality of Type 1 electrode fingers, and in a first IDT and a second IDT included in the plurality of IDTs to be adjacent to each other, one Type 1 electrode finger of the second IDT is disposed between two Type 1 electrode fingers of the first IDT. Accordingly, it is possible to provide a DMS filter capable of improving the amount of attenuation in an attenuation band adjacent to the wide band side for the passband and miniaturizing a product by saving space.

Abstract: A method for manufacturing a film bulk acoustic resonator (FBAR) package with a thin film sealing structure includes: forming an FBAR having a bottom electrode, a piezoelectric layer, and a top electrode on a substrate; forming a plurality of inner pad electrodes electrically connected to the top electrode and the bottom electrode of the FBAR; attaching a PR (photo-resist) film to tops of the inner pad electrodes; etching the PR film to expose the inner pad electrodes to the outside; and forming a sealing layer on top of the PR film and tops of the exposed inner pad electrodes.