Abstract: A film bulk acoustic resonator (FBAR) chip and package structure with improved power tolerance includes: a first substrate having a plurality of FBARs each having a bottom electrode, a piezoelectric material, and a top electrode, and first bonding pads connected to the bottom electrodes or the top electrodes of the FBARs; and a second substrate having a plurality of vias passing therethrough, second bonding pads located on one end surface of the vias facing the first substrate, and external connection pads located on the other end surface of the vias which does not face the first substrate, wherein the first substrate and the second substrate are bonded by means of bonding of the first bonding pads and the second bonding pads.

Abstract: A surface acoustic wave (SAW) device according to the present invention includes: a substrate; an intermediate layer formed on an upper surface of the substrate; a piezoelectric layer formed on an upper surface of the intermediate layer; and an inter-digital transducer (IDT) electrode formed on an upper surface of the piezoelectric layer to generate a SAW, wherein an upper portion of the substrate is deformed by a predetermined thickness by ion implantation to form an ion trap layer and the intermediate layer is formed on an upper surface of the ion trap layer.

Abstract: Provided is an acoustic resonator including: a substrate including a first cavity; a first electrode formed above the substrate; a piezoelectric layer formed on one surface of the first electrode; and a second electrode formed on one surface of the piezoelectric layer, wherein the first electrode and the piezoelectric layer include an overlapping area that corresponds to a first end and a second end of the first cavity, the first electrode has a termination surface formed as an inclined surface of a first acute angle ?1 outside the overlapping area with respect to the second end of the first cavity, the piezoelectric layer is formed to include a first air bridge area that has a second cavity and is formed between the piezoelectric layer and the first electrode in a vertical direction and between the second end of the first cavity and the termination surface in a horizontal direction.

Abstract: Disclosed is a film bulk acoustic resonator (FBAR) including a substrate, a lower electrode formed above the substrate, a piezoelectric layer formed above the lower electrode, an upper electrode formed above the piezoelectric layer, and a first protection layer formed above the upper electrode. Here, the first protection layer covers the upper electrode while extending downward along a side surface of one end of the upper electrode to cover a certain area of the piezoelectric layer.

Abstract: An air-gap type film bulk acoustic resonator (FBAR) according to the present invention may include: a substrate comprising an air gap portion on an upper surface thereof; a lower electrode formed on the substrate; a piezoelectric layer formed on the lower electrode; an upper electrode formed on the piezoelectric layer; a protective layer formed on the upper electrode; and a beam structure extended in a dome shape from one side of the upper electrode to define a space portion between the upper electrode and the piezoelectric layer, wherein one end of the beam structure is in contact with the piezoelectric layer.

Abstract: Disclosed is an air-gap type film bulk acoustic resonator (FBAR) including a substrate including an air-gap portion on a top surface, a lower electrode having a polygonal plate shape above the substrate and configured to surround a top of the air-gap portion, a piezoelectric layer formed above the lower electrode, and an upper electrode formed above the piezoelectric layer. Here, the lower electrode includes an electrode non-deposited area formed between one side plate boundary surface of the polygonal plate and one side air-gap boundary surface of the air-gap portion to expose one part of a top of the air-gap portion.

Abstract: A resonator includes: interdigital transducer (IDT) including first electrode including first base on piezoelectric substrate and extended in reference direction, and first protrusions connected to the first base and extended in direction intersecting with the reference direction, and second electrode including second base on the piezoelectric substrate and extended in the reference direction, and second protrusions connected to the second base and extended in direction intersecting with the reference direction, each of the second protrusions extended to have one of the first protrusions inserted between the second protrusion and another second protrusion adjacent to the second protrusion, wherein a width of each of first specific protrusions included between one end of the IDT and first position at first distance from the one end, among the first protrusions and the second protrusions, decreases from first specific protrusion closest to the first position toward first specific protrusion closest to the one e

Abstract: A double mode SAW (DMS) filter includes: a plurality of interdigital transducers (IDTs), each having a plurality of Type 1 electrode fingers and a plurality of Type 2 electrode fingers formed on a piezoelectric substrate, wherein one Type 2 electrode finger among the plurality of Type 2 electrode fingers is disposed between two adjacent Type 1 electrode fingers among the plurality of Type 1 electrode fingers, and in a first IDT and a second IDT included in the plurality of IDTs to be adjacent to each other, one Type 1 electrode finger of the second IDT is disposed between two Type 1 electrode fingers of the first IDT. Accordingly, it is possible to provide a DMS filter capable of improving the amount of attenuation in an attenuation band adjacent to the wide band side for the passband and miniaturizing a product by saving space.

Abstract: A method for manufacturing a film bulk acoustic resonator (FBAR) package with a thin film sealing structure includes: forming an FBAR having a bottom electrode, a piezoelectric layer, and a top electrode on a substrate; forming a plurality of inner pad electrodes electrically connected to the top electrode and the bottom electrode of the FBAR; attaching a PR (photo-resist) film to tops of the inner pad electrodes; etching the PR film to expose the inner pad electrodes to the outside; and forming a sealing layer on top of the PR film and tops of the exposed inner pad electrodes.

Abstract: A film bulk acoustic resonator (FBAR) chip and package structure with an improved temperature coefficient that is capable of being more stable with respect to surrounding temperature changes, without any decrease in performance of Q factor or k2e. The FBAR chip and package structure includes a plurality of FBARs located on a central area of one surface of a substrate and each having a bottom electrode, a piezoelectric material, and a top electrode; and a temperature compensation layer formed around the central area of one surface of the substrate.

Abstract: A resonator includes an interdigital transducer provided with a main electrode area formed to a shape of a comb on a piezoelectric substrate by a reference pitch in such a manner as to have a unit length along a longitudinal direction thereof and one pair of first electrode areas constituted of one side first electrode area formed to a shape of a comb on the piezoelectric substrate by a first increment pitch obtained by increasing the reference pitch by a first value in such a manner as to have the unit length along the longitudinal direction and the other side first electrode area formed to a shape of a comb on the piezoelectric substrate by a first decrement pitch obtained by decreasing the reference pitch by almost the same value as the first value.

Abstract: An air-gap type film bulk acoustic resonator (FBAR) is provided. The air-gap type FBAR includes a substrate which comprises an air gap portion having a substrate cavity formed in a top surface, a lower electrode formed on the substrate, a piezoelectric layer which is formed on the lower electrode and has one side forming an edge portion in the vicinity of a virtual edge according to vertical projection of the air gap portion, an upper electrode formed on the piezoelectric layer, a first electrode frame which comprises an open ring structure in plane, the open ring structure surrounding a part of a periphery of the piezoelectric layer on the lower electrode, and a second electrode frame positioned on the upper electrode and adjacent to an open portion of the open ring structure.

Abstract: The present invention relates to a surface acoustic wave device package and a method of manufacturing the same, and more specifically, to a method of manufacturing a miniaturized surface acoustic wave device package.

Abstract: Disclosed is an air-gap type film bulk acoustic resonator (FBAR) including a substrate including an air-gap portion with a top surface in which a substrate cavity is formed, a lower electrode formed above the substrate while surrounding the air-gap portion, a piezoelectric layer formed above the lower electrode, and an upper electrode formed above the piezoelectric layer corresponding to a virtual area formed according to a vertical projection of the air-gap portion. Here, the piezoelectric layer includes a void portion having a piezoelectric cavity between the lower electrode and the upper electrode, and the void portion is formed below an edge portion corresponding to an end part of the upper electrode.

Abstract: A SAW filter is a high-frequency filter including a common terminal, a transmission terminal and a reception terminal through which high-frequency signals are inputted and outputted. The SAW filter includes: a first filter circuit having a first frequency band as a pass band, and connected to the common terminal and the transmission terminal; a second filter circuit having a second frequency band different from the first frequency band as a pass band, and connected to the common terminal and the reception terminal; an antenna connected to the common terminal; and at least one inductor connected in series between the common terminal and the first filter circuit or the second filter circuit.

Abstract: A surface acoustic wave device includes a substrate, a first electrode and a second electrode formed on the substrate to extend along a first direction, wherein the first electrode and the second electrode are alternately disposed along the second direction, one end of the first electrode on one side of the first direction is aligned along the second direction, and one end of the second electrode on the other side of the first direction is aligned along the second direction, a temperature compensation film which covers the first electrode and the second electrode, a first additional film formed on the temperature compensation film to vertically overlap a partial region from the one end of the first electrode on the one side of the first direction, and a second additional film formed on the temperature compensation film to vertically overlap a partial region from the one end of the second electrode.

Abstract: Disclosed is an air gap type film bulk acoustic resonator (FBAR). The air gap type FBAR includes a substrate which includes an air gap portion in a top surface thereof, a lower electrode formed on the substrate, a piezoelectric layer formed on the lower electrode, and an upper electrode formed on the piezoelectric layer. Here, the lower electrode includes a first lower electrode formed spaced apart from the air gap portion in the substrate and a second lower electrode formed on the substrate to be separated from the first lower electrode by being stacked to surround only a part of a top of the air gap portion in order to form a non-deposition area of the air gap portion.

Abstract: A piezoelectric vibration module includes a vibration plate adapted to have one end fixed and the other end not fixed and driven in a vertical direction based on the fixed first end, a first piezoelectric element attached to the top or bottom of the vibration plate and adapted to generate a vibration power when power is applied, and a weight formed in the other end of the top or bottom of the vibration plate and adapted to control the vibration frequency of the piezoelectric vibration module. The first piezoelectric element is attached to the top or bottom of the vibration plate with a predetermined interval from a fixed point at the one end of the vibration plate.

Abstract: The present invention relates to a stacked piezoelectric ceramic element and can provide a stacked piezoelectric ceramic element produced by stacking two or more ceramic green sheets, the stacked piezoelectric ceramic element having a structure in which a ceramic porous or defective part constituting the stacked piezoelectric ceramic element is impregnated with an organic resin, thereby improving waterproof performance capable of preventing the deterioration of insulation resistance in a highly humid environment.

Abstract: A flip chip includes a substrate, an electrode pad layer stacked over the substrate, a passivation layer stacked at both ends of the electrode pad layer, an under bump metallurgy (UBM) layer stacked over the electrode pad layer and the passivation layer, and a bump formed over the UBM layer. The width of an opening on which the passivation layer is not formed over the electrode pad layer is greater than the width of the bump. The flip chip can prevent a crack from being generated in the pad upon ultrasonic bonding.