Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

Abstract: In some embodiments, a phased antenna array system includes antenna sub-arrays spaced apart from one another about a mobile device chassis, with each of the antenna sub-arrays including one or more antenna element. One or more of the antenna sub-arrays are selectively addressable to generate an aggregate response among a combination of the plurality of antenna sub-arrays to steer one or more signal beam in a desired direction.

Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are disclosed. The method includes forming at least one Micro-Electro-Mechanical System (MEMS) cavity. The method for forming the cavity further includes forming at least one first vent hole of a first dimension which is sized to avoid or minimize material deposition on a beam structure during sealing processes. The method for forming the cavity further includes forming at least one second vent hole of a second dimension, larger than the first dimension.

Abstract: The present subject matter relates to the use of current splitting and routing techniques to distribute current uniformly among the various layers of a device to achieve a high Q-factor. Such current splitting can allow the use of relatively narrow interconnects and feeds while maintaining a high Q. Specifically, for example a micro-electromechanical systems (MEMS) device can comprise a metal layer comprising a first portion and a second portion that is electrically separated from the first portion. A first terminus can be independently connected to each of the first portion and the second portion of the metal layer, wherein the first portion defines a first path between the metal layer and the first terminus, and the second portion defines a second path between the metal layer and the first terminus.

Abstract: Tunable duplexers and related methods are disclosed for use in communications networks. A tunable radiating duplexer can include a first antenna comprising a first variable capacitor and a second antenna comprising a second variable capacitor.

Abstract: Micro-electro-mechanical system (MEMS) variable capacitors and actuation components and related methods are provided. A MEMS variable capacitor can include first and second feed lines extending substantially parallel to one another. Further, MEMS variable capacitors can include first and second capacitive plates being spaced apart from the first and second feed lines. The first and second capacitive plates can be separately movable with respect to at least one of the first and second feed lines for varying the capacitance between the first and second feed lines over a predetermined capacitance range.

Abstract: Tunable notch filters and control loop systems and methods can include a tunable notch filter providing a stop band, a sensing circuit in communication with the tunable notch filter and adapted to determine a phase change between a reference signal and a signal reflected from the tunable notch filter, and a control loop in communication with the tunable notch filter and the sensing circuit, the control loop being operable to adjust the tunable notch filter to modify the phase change.

Abstract: Methods for tuning a tunable matching network can involve comparing a source impedance of a source to a real part of a load impedance of a load. Depending on characteristics of the network, capacitances of one or more tunable capacitors can be set to correspond to device boundary parameters, and capacitances of remaining tunable capacitors can be set based on a predetermined relationship between the parameters of the capacitors, the source, the load, and other components. From these initially determined values, the capacitance value of one or more of the capacitors can be adjusted to fall within device boundary conditions and achieve a perfect or at least best match tuning configuration.

Abstract: The present subject matter relates to methods, devices, and systems for switched array control. For an array of two-state elements that can be independently positioned in either an active state or an inactive state, the methods, devices, and systems can determine a linear number D of elements in the active state needed to achieve a total combined activity corresponding to a desired behavior, compare a number A of elements in an active state to the linear number D of elements needed to achieve the desired behavior, activate a first number n of inactive elements, and deactivate a second number m of active elements, wherein the difference between the first number n and the second number m is equal to the difference between the linear number D of elements needed to achieve the desired behavior and the present number A of elements in an active state.

Abstract: Tunable radio front end systems and methods are disclosed in which the tunable radio front end includes a first tunable impedance matching network, a second tunable impedance matching network, a transmission signal path, and a reception signal path. The transmission signal path can include a first tunable filter in communication with the first tunable impedance matching network, a tunable power amplifier connected to the first tunable filter, and a radio transmitter connected to the tunable power amplifier. The reception signal path can include a second tunable filter in communication with the second tunable impedance matching network, a tunable low-noise amplifier connected to the second tunable filter, and a radio receiver connected to the tunable low-noise amplifier.

Abstract: Methods and devices for modifying a tunable matching network are disclosed. In one aspect, a method of modifying a tunable matching network can include connecting one or more shunt inductors to a tunable matching network exhibiting parasitic capacitance to ground, whereby high-frequency performance of the tunable matching network is improved.

Abstract: Methods and devices for fabricating tri-layer beams are provided. In particular, disclosed are methods and structures that can be used for fabricating multilayer structures through the deposition and patterning of at least an insulation layer, a first metal layer, a beam oxide layer, a second metal layer, and an insulation balance layer.

Abstract: Systems and methods for calibrating antenna tuner device parameters can involve measuring a first signal level of an antenna tuner device, adjusting a tuning setting of the antenna tuner device, measuring one or more adjusted signal levels of the antenna tuner device, determining a level change between the first signal level and the one or more adjusted signal levels, comparing the level change to a predefined reference level change, and adjusting a device setting of the antenna tuner device to compensate for a difference between the level change and the predefined reference level change.

Abstract: The present subject matter relates to MEMS tunable capacitors and methods for operating such capacitors. The tunable capacitor can feature a primary stationary actuator electrode on a substrate, a secondary stationary actuator electrode on the substrate, a stationary RF signal capacitor plate electrode on the substrate, a sprung cantilever disposed over the substrate, a beam anchor connecting a first end of the sprung cantilever to the substrate, and one or more elastic springs or other biasing members connecting a second end of the sprung cantilever to the substrate, the second end being located distally from the first end. The spring cantilever can be movable between an OFF state defined by the potential difference between the stationary and moveable actuator electrodes being zero, and an ON state defined by a non-zero potential difference between the stationary and moveable actuator electrodes.

Abstract: Methods for Implementation of a Switching Function in a Microscale Device and for Fabrication of a Microscale Switch. According to one embodiment, a method is provided for implementing a switching function in a microscale device. The method can include providing a stationary electrode and a stationary contact formed on a substrate. Further, a movable microcomponent suspended above the substrate can be provided. A voltage can be applied between the between a movable electrode of the microcomponent and the stationary electrode to electrostatically couple the movable electrode with the stationary electrode, whereby the movable component is deflected toward the substrate and a movable contact moves into contact with the stationary contact to permit an electrical signal to pass through the movable and stationary contacts. A current can be applied through the first electrothermal component to produce heating for generating force for moving the microcomponent.

Abstract: Methods and structures for fabricating MEMS devices on compliant layers are provided. In particular, disclosed are methods and structures that can include the use of a sacrificial layer composed of a material having material properties relative to one or more other layers. These methods and structures can reduce final device shape sensitivity to process parameters, deposition temperature differences, specific material, time, and/or geometry. Further, such methods and structures can improve the final as-built shape of released devices, reduce variability in the as-built shape, eliminate decoupling of the deposited layers from the substrate, and reduce variability across a product array, die, or wafer.

Abstract: Methods and devices for fabricating tri-layer beams are provided. In particular, disclosed are methods and structures that can be used for fabricating multilayer structures through the deposition and patterning of at least an insulation layer, a first metal layer, a beam oxide layer, a second metal layer, and an insulation balance layer.

Abstract: Cantilever beam electrostatic actuators are disclosed. A cantilever beam electrostatic actuator in accordance with the present invention comprises an actuator beam having a first width at a support anchor point and a second width at a distal end of the actuator, wherein the first width is narrower than the second width. Another actuator in accordance with the present invention comprises an actuator region, having a first width, a beam, having a second width, coupled between an edge of the actuator region and a pivot point, the beam being approximately centered on the actuator region, wherein the second width is narrower than the first width, and at least one auxiliary actuator flap, coupled to the actuator region, the at least one auxiliary actuator flap coupled to the actuator region along the edge of the actuator region, the at least one auxiliary actuator flap being farther away from a centerline of the actuator than the beam.

Abstract: MEMS Device having Electrothermal Actuation and Release and Method for Fabricating. According to one embodiment, a microscale switch is provided and can include a substrate and a stationary electrode and stationary contact formed on the substrate. The switch can further include a movable microcomponent suspended above the substrate. The microcomponent can include a structural layer including at least one end fixed with respect to the substrate. The microcomponent can further include a movable electrode spaced from the stationary electrode and a movable contact spaced from the stationary electrode. The microcomponent can include an electrothermal component attached to the structural layer and operable to produce heating for generating force for moving the structural layer.

Abstract: Thin film encapsulation devices and methods for MEMS devices and packaging are provided. For a MEMS device encapsulated by a sacrificial layer, a lid layer can be deposited over the MEMS device without touching the MEMS device. The lid layer can be patterned and etched with a distribution of release etch holes, which provide access to the sacrificial layer encapsulating the MEMS device. The sacrificial material can be removed through the release etch holes, and the release etch holes can be filled with a seal layer. The seal layer can be removed from the substrate except where it seals the etch holes, leaving a series of plugs that can prevent other materials from entering the MEMS device cavity. In addition, a seal metal layer can be deposited and patterned so that it covers and encloses the plugged etch holes, and a barrier layer can cover the entire encapsulation structure.