Abstract: The present invention disclosed herein relates to a substrate processing method, and more particularly, to: a substrate processing method in which a flow rate of a process gas in a depressurizing operation is regulated in a pressure changing process for improving properties of a thin film; a substrate processing apparatus using the substrate processing method; and a semiconductor manufacturing method.

Abstract: Provided are a method of depositing a thin film and a method of manufacturing a semiconductor device using the same, and the method of depositing a thin film uses a substrate processing apparatus including a chamber, a substrate support on which a substrate is mounted, a gas supply unit, and a power supply unit that supplies high-frequency and low-frequency power to the chamber, and includes: a step of mounting, on the substrate support, the substrate including a lower thin film deposited under the condition of a process temperature in a low temperature range; a step of depositing an upper thin film on the lower thin film under the condition of the process temperature in the low temperature range; and a step of treating a surface of the upper thin film under the condition of the process temperature in the low temperature range.

Abstract: Provided is a feeding block for transferring a process gas to a process chamber, the feeding block including a body, a first annular channel provided in the body, at least one first supply channel extending from an outer surface of the body to the first annular channel to supply a first process gas to the first annular channel, and at least one first discharge channel extending from the first annular channel to an outer surface of the body to discharge the first process gas in the first annular channel to an outside, wherein the body is provided as a single member such that the first supply channel, the first annular channel, and the first discharge channel have continuous inner surfaces.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.

Abstract: The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of processing a substrate using plasma. A substrate processing apparatus includes: a process chamber having an opening in an upper portion thereof; a gas injection part coupled to the opening to define a processing space for substrate processing together with the process chamber and inject a process gas into the processing space; and a plurality of plasma generation parts disposed above the gas injection part to generate plasma and configured to radicalize the process gas so as to supply the radicalized process gas into the gas injection part, wherein one and the other of the plurality of plasma generation parts are disposed at heights different from each other from a bottom surface of the gas injection part.

Abstract: The present invention disclosed herein relates to a substrate processing apparatus and a substrate processing system having the same, and more particularly, to a substrate processing apparatus capable of simultaneously processing a large amount of substrates and a substrate processing system having the same. The present invention discloses a substrate processing apparatus including a first processing module in which substrate processing is performed on a plurality of substrates, a second processing module disposed adjacent to the first processing module to perform the substrate processing on the plurality of substrates, a first utility part disposed adjacent to a rear surface of the first processing module, a second utility part disposed adjacent to a rear surface of the second processing module, and an upper support part provided between the first utility part and the second utility part to divide the maintenance space into an upper area and a lower area.

Abstract: The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of performing substrate processing such as deposition, etching, and heat processing on a plurality of substrates. The present invention discloses a substrate processing apparatus including a reaction tube having a processing space, in which a plurality of substrates are accommodated to perform substrate processing, a nozzle installation part protruding outward from a portion of a side surface of the reaction tube to provide a portion of an outer surface of the reaction tube, and a plurality of gas injection nozzles disposed along a circumference of each of the substrate in a direction perpendicular to the nozzle installation part to inject a process gas into the reaction tube, wherein the nozzle installation part comprises a plurality of insertion parts corresponding to the gas injection nozzles.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: A substrate processing method using a substrate processing apparatus which comprises a process chamber in which a reaction space is formed to process a substrate in which a composite layer pattern having a plurality of first insulating layers and a plurality of second insulating layers alternately stacked thereon is formed, a substrate support unit, a gas distribution unit, and a plasma reactor, the method comprising the steps of: heating the substrate support unit and the gas distribution unit such that a temperature of the gas distribution unit is maintained equal to or lower than a temperature of the substrate support unit; supplying a reactive gas including a halogen-containing gas to the plasma reactor; generating radicals by applying power to the plasma reactor to activate the halogen-containing gas; and at least partially etching the plurality of first insulating layers in a lateral direction selectively with respect to the plurality of second insulating layers by supplying the radicals onto the substr

Abstract: A method for atomic layer etching may include a step of providing a substrate on which a material to be etched is formed, a modifying step of controlling the substrate at a first temperature and modifying a surface layer of the material to be removed by supplying a modifying gas to the substrate, and an etching step of controlling the substrate at a second temperature different from the first temperature and removing the modified surface layer by supplying an etching gas to the substrate.

Abstract: The present invention disclosed herein relates to a transfer robot and a substrate processing apparatus having the same, and more particularly, to a transfer robot for transferring a substrate through a transfer module and a substrate processing apparatus having the same.

Abstract: Provided is a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing on a plurality of substrates in a process chamber defining a plurality of processing spaces. The substrate processing apparatus includes a process chamber in which N processing spaces are defined to process substrates, N gas injection units installed above the process chamber to respectively correspond to the N processing spaces, N substrate supports that face the gas injection units and support the substrates, a transfer support installed in the process chamber to support the substrates, a rotation support which is installed between the adjacent substrate supports that are substrate transfer paths according to rotation driving of the transfer support and on which the substrates are seated to be rotated about a vertical second rotation axis passing through the substrates.

Abstract: The present invention relates to a method for forming an amorphous silicon thin film, a method for manufacturing a semiconductor device including the same, and a semiconductor device manufactured thereby. The present invention discloses a method for forming an amorphous silicon thin film, wherein the method includes a first step (S10) of providing a first gas containing silicon and a second gas containing nitrogen on a substrate (100) to form a first amorphous silicon layer (310b), and a second step (S20) of providing a first gas containing silicon on the substrate (100) having the first amorphous silicon layer (310b) formed thereon to form a second amorphous silicon layer (300a).

Abstract: Various embodiments generally relate to a method for forming a graphene barrier layer for a semiconductor device, and more particularly, to a method of forming a barrier thin film including a graphene layer capable of reducing the contact resistance of a metal interconnect. A method for forming a graphene barrier layer according to an embodiment includes: loading a substrate, which has a titanium-containing layer formed thereon, in a chamber of a substrate processing system, the chamber having a processing space formed therein; inducing nucleation on the titanium-containing layer by supplying a first reactant gas including a unsaturated hydrocarbon into the chamber; and forming a graphene layer on the titanium-containing layer by supplying a second reactant gas including a saturated hydrocarbon into the chamber.

Abstract: The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing through a pressure change between a high pressure and a low pressure. The substrate processing apparatus includes: a process chamber (100) comprising a chamber body (110) which has an opened upper portion and in which a through-hole (150) is defined in a bottom surface thereof, and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space (S1); a substrate support (200) comprising a substrate support plate (210) which is installed in the process chamber (100) and on which a substrate (1) is seated on a top surface thereof, and a substrate support shaft (220) installed to pass through the through-hole (150) so as to support the substrate support plate (210).

Abstract: The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including: a process chamber having an inner space; a substrate support on which a substrate is seated on a top surface thereof; an inner lid part which is installed to be vertically movable in the inner space and of which a portion is in close contact with the bottom surface of the process chamber to define a sealed processing space in which the substrate support is disposed; a gas supply part configured to supply a process gas to the processing space; and an inner lid driving part configured to drive the vertical movement of the inner lid part.

Abstract: The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The present invention discloses a substrate processing apparatus including: a process chamber (100) which has an inner space and in which an installation groove (130) is defined at a central side on a bottom surface (120); a substrate support (200) installed to be inserted into the installation groove (130) and having a top surface on which the substrate is seated; an inner lid part (300) which is installed to be movable vertically in the inner space and descends so that a portion thereof is in close contact with the bottom surface (120) adjacent to the installation groove (130) to define a sealed processing space (S2) in which the substrate support (200) is disposed therein.

Abstract: The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The substrate processing apparatus of the present invention includes: a process chamber (100) including a chamber body (110) which has an opened upper portion and in which an installation groove (130) is defined at a central side of a bottom surface (120) thereof, and a gate (111) configured to load/unload a substrate (1) is disposed at one side thereof, and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space (S1); a substrate support (200) installed to be inserted into the installation groove (130) of the chamber body (110) and having a top surface on which the substrate (1) is seated.