Abstract: A substrate processing method using a substrate processing apparatus including a process chamber having a reaction space for processing a substrate including an underlayer and a multilayer pattern provided on the underlayer and formed by alternately stacking at least a plurality of first insulating layers and a plurality of second insulating layers on one another, a substrate supporter, a gas ejector, and a plasma reactor, includes a pretreatment step for forming a passivation layer by supplying, onto the substrate through the gas ejector, a pretreatment gas, and an etching step for selectively and at least partially etching the plurality of second insulating layers in a lateral direction relative to the plurality of first insulating layers by supplying, onto the substrate through the gas ejector, an etchant.

Abstract: The present invention relates to a substrate processing apparatus, and more particularly, the substrate processing apparatus includes a gas utility exhausting each of the reaction space and the protective space so that a pressure change process including a high-pressure process, which is in a state of a pressure higher than atmospheric pressure, and a low-pressure process that is in a state of a pressure lower than the atmospheric pressure, is performed on a plurality of substrates introduced into the reaction space.

Abstract: Provided is a substrate processing apparatus, and more particularly, to a substrate processing apparatus that performs substrate processing on a plurality of substrates in a process chamber defining a plurality of processing spaces. The substrate processing apparatus includes a process chamber in which N processing spaces are defined to process substrates, N gas injection units installed above the process chamber to respectively correspond to the N processing spaces, N substrate supports that face the gas injection units and support the substrates, a transfer support installed in the process chamber to support the substrates, a rotation support which is installed between the adjacent substrate supports that are substrate transfer paths according to rotation driving of the transfer support and on which the substrates are seated to be rotated about a vertical second rotation axis passing through the substrates.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: A substrate processing method using a substrate processing apparatus which comprises a process chamber in which a reaction space is formed to process a substrate in which a composite layer pattern having a plurality of first insulating layers and a plurality of second insulating layers alternately stacked thereon is formed, a substrate support unit, a gas distribution unit, and a plasma reactor, the method comprising the steps of: heating the substrate support unit and the gas distribution unit such that a temperature of the gas distribution unit is maintained equal to or lower than a temperature of the substrate support unit; supplying a reactive gas including a halogen-containing gas to the plasma reactor; generating radicals by applying power to the plasma reactor to activate the halogen-containing gas; and at least partially etching the plurality of first insulating layers in a lateral direction selectively with respect to the plurality of second insulating layers by supplying the radicals onto the substr

Abstract: Disclosed herein is a substrate processing apparatus including a process chamber having a processing space defined therein to process a plurality of substrates, a gas injector provided on a upper side of the process chamber to inject a processing gas into the processing space, a plurality of substrate supports arranged inside the process chamber, the substrates being seated on the substrate supports, a substrate conveyor disposed in the process chamber to convey the plurality of substrates to different substrate supports among the substrate supports, and a substrate rotating part arranged to allow each of the plurality of substrates to be seated between neighboring ones of the plurality of substrate supports, and to rotate the substrates, wherein the substrate rotating part may include a tension adjuster disposed on at least a portion of the power transmitter to adjust a tension in the power transmitter.

Abstract: The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus in which a substrate is processed at a high pressure and a low pressure. The substrate processing apparatus of the present invention includes: a process chamber (100) including a chamber body (110) which has an opened upper portion and in which an installation groove (130) is defined at a central side of a bottom surface (120) thereof, and a gate (111) configured to load/unload a substrate (1) is disposed at one side thereof, and a top lid (140) coupled to the upper portion of the chamber body (110) to define an inner space (S1); a substrate support (200) installed to be inserted into the installation groove (130) of the chamber body (110) and having a top surface on which the substrate (1) is seated.

Abstract: Disclosed herein is a method of assembling a substrate supporting apparatus, including coupling a conductive rod to an electrode installed in a substrate support provided to support a substrate, forming a sacrificial layer on the rod, bonding the rod and the electrode by melting and infiltrating a filler into a coupling area between the rod and the electrode, while forming a protective layer between the rod and the sacrificial layer by infiltrating the filler into a gap between the rod and the sacrificial layer, and coupling a shaft to the substrate support, the rod extending through the shaft.

Abstract: The present invention relates to an internal chamber processing method, and more particularly, to an internal chamber processing method for performing processing on a chamber and a component inside the chamber. Disclosed is an internal chamber processing method for processing the inside of a chamber in which substrate processing is performed, the method including a pressurizing operation (S100) of raising a pressure inside a chamber to a first pressure (P1) higher than the atmospheric pressure by using a pressurized gas and a depressurizing operation of lowering the pressure inside the chamber from the first pressure (P1) to a second pressure (P2) after the pressurizing operation (S100). The pressurizing operation (S100) and the depressurizing operation (S200) are performed in a state in which a substrate to be processed is removed from the inside of the chamber.

Abstract: A gap-filling method for a semiconductor device and method of manufacturing the semiconductor device using the same, are provided. The gap-filling method may include: preparing a substrate with a hole pattern; supplying a process gas to the substrate and applying a first VHF power source to form a pulse wave plasma to form a first silicon nitride layer in the hole pattern; and supplying the process gas to the substrate and applying a second VHF power source to form a continuous wave plasma to form a second silicon nitride layer on the first silicon nitride layer.

Abstract: A substrate supporting assembly includes a susceptor plate including at least one substrate seat, and a plurality of gas flow lines for supplying a lifting gas, an acceleration gas, and a deceleration gas to the substrate seat, and at least one satellite on the at least one substrate seat and including an upper surface, and a lower surface where a rotation pattern for receiving a rotational force and a braking force from the acceleration gas and the deceleration gas is provided. The at least one satellite is lifted from the at least one substrate seat by the lifting gas supplied from the at least one substrate seat, is rotated relative to the susceptor plate by the acceleration gas supplied in a forward direction of rotation, to rotate the substrate, and is decelerated or stopped by the deceleration gas supplied in a reverse direction of rotation.

Abstract: Disclosed herein is a substrate processing apparatus including a process chamber having a processing space defined therein to process a plurality of substrates, a gas injector provided on a upper side of the process chamber to inject a processing gas into the processing space, a plurality of substrate supports arranged inside the process chamber, the substrates being seated on the substrate supports, a substrate conveyor disposed in the process chamber to convey the plurality of substrates to different substrate supports among the substrate supports, and a substrate rotating part arranged to allow each of the plurality of substrates to be seated between neighboring ones of the plurality of substrate supports, and to rotate the substrates, wherein the substrate rotating part may include a tension adjuster disposed on at least a portion of the power transmitter to adjust a tension in the power transmitter.

Abstract: Disclosed herein is a substrate processing apparatus including a process chamber having a reaction space formed therein, a substrate support installed in the reaction space to support a plurality of substrates, the substrate support comprising a susceptor plate, a plurality of vacuum holes formed in a top surface of the susceptor plate, and a vacuum line connecting the plurality of vacuum holes to an external pump, a gas injector comprising a plurality of gas injection units disposed radially to face the substrate support to inject process gas into the reaction space, and a controller configured to adjust a chucking force on the substrates according to a type of gas supplied through the gas injector.

Abstract: A method of forming a thin film using a substrate processing apparatus includes placing the substrate on the electrostatic chuck, depositing the thin film on the substrate, transferring the substrate, and performing a hardening process. The depositing the thin film on the substrate applies a first DC power source to chuck the substrate, supplies a process gas and applies a first RF power source to form a first plasma to deposit the thin film on the substrate. The transferring the substrate transfers the substrate on which the thin film has been deposited outside the process chamber. The performing a hardening process applies a second DC power source, supplies a purge gas, and applies a second RF power source to form the plasma to harden a deposition film formed in an interior of the process chamber.

Abstract: Disclosed herein is a method of assembling a substrate supporting apparatus, including coupling a conductive rod to an electrode installed in a substrate support provided to support a substrate, forming a sacrificial layer on the rod, bonding the rod and the electrode by melting and infiltrating a filler into a coupling area between the rod and the electrode, while forming a protective layer between the rod and the sacrificial layer by infiltrating the filler into a gap between the rod and the sacrificial layer, and coupling a shaft to the substrate support, the rod extending through the shaft.

Abstract: Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P1) to a second pressure (P2) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P6), which is greater than the atmospheric pressure, to a seventh pressure (P7); and an annealing operation of changing the process pressure into a preset pressure change pattern between the pressurizing operation and the depressurizing operation, under a temperature atmosphere of a second temperature (T2) higher than the room temperature. A temperature raising operation of raising a temperature atmosphere from a first temperature (T1) to the second temperature (T2) is performed from a preset temperature raising start point (t1) to a preset temperature raising end point (t2) while the pressurizing operation is performed or after the pressurizing operation is performed.

Abstract: An apparatus for processing substrates may include a process chamber, a substrate supporter and an impedance matcher. The process chamber may process a plurality of the substrates using plasma. The process chamber may include a plurality of processing spaces configured to simultaneously process the substrates. The substrate supporter may be arranged in each of the processing spaces. The substrate supporter may include a plurality of stages configured to support the substrates. The impedance matcher may be provided to the process chamber. The impedance matcher may calculate impedances under the substrate supporter in regions with where the stages in simultaneously processing the substrates. The impedance matcher may compare the calculated impedances with a reference impedance to obtain an impedance compensation value. The impedance matcher may identically match the impedances in the regions with the stages with each other using the impedance compensation value.

Abstract: A substrate processing method using a substrate processing apparatus including a process chamber having a reaction space for processing a substrate including an underlayer and a multilayer pattern provided on the underlayer and formed by alternately stacking at least a plurality of first insulating layers and a plurality of second insulating layers on one another, a substrate supporter, a gas ejector, and a plasma reactor, includes a pretreatment step for forming a passivation layer by supplying, onto the substrate through the gas ejector, a pretreatment gas, and an etching step for selectively and at least partially etching the plurality of second insulating layers in a lateral direction relative to the plurality of first insulating layers by supplying, onto the substrate through the gas ejector, an etchant.

Abstract: Provided are a method of depositing a thin film and a method of manufacturing a semiconductor device using the same, and the method of depositing a thin film uses a substrate processing apparatus including a chamber, a substrate support on which a substrate is mounted, a gas supply unit, and a power supply unit that supplies high-frequency and low-frequency power to the chamber, and includes: a step of mounting, on the substrate support, the substrate including a lower thin film deposited under the condition of a process temperature in a low temperature range; a step of depositing an upper thin film on the lower thin film under the condition of the process temperature in the low temperature range; and a step of treating a surface of the upper thin film under the condition of the process temperature in the low temperature range.