Abstract: A substrate supporting assembly includes a susceptor plate including at least one substrate seat, and a plurality of gas flow lines for supplying a lifting gas, an acceleration gas, and a deceleration gas to the substrate seat, and at least one satellite on the at least one substrate seat and including an upper surface, and a lower surface where a rotation pattern for receiving a rotational force and a braking force from the acceleration gas and the deceleration gas is provided. The at least one satellite is lifted from the at least one substrate seat by the lifting gas supplied from the at least one substrate seat, is rotated relative to the susceptor plate by the acceleration gas supplied in a forward direction of rotation, to rotate the substrate, and is decelerated or stopped by the deceleration gas supplied in a reverse direction of rotation.

Abstract: A gas supply block may include a first block, a second block and a third block. The first block may include a first gas inlet passage configured to supply a first process gas. The second block may include a second gas inlet passage configured to supply a second process gas. The third block may be combined with the first block and the second block. The third block may be configured to diffuse and supply the first process gas and the second process gas into gas supply lines connected to the processing spaces.

Abstract: Disclosed herein is a substrate processing apparatus including a process chamber having a processing space defined therein to process a plurality of substrates, a gas injector provided on a upper side of the process chamber to inject a processing gas into the processing space, a plurality of substrate supports arranged inside the process chamber, the substrates being seated on the substrate supports, a substrate conveyor disposed in the process chamber to convey the plurality of substrates to different substrate supports among the substrate supports, and a substrate rotating part arranged to allow each of the plurality of substrates to be seated between neighboring ones of the plurality of substrate supports, and to rotate the substrates, wherein the substrate rotating part may include a tension adjuster disposed on at least a portion of the power transmitter to adjust a tension in the power transmitter.

Abstract: Disclosed herein is a substrate processing apparatus including a process chamber having a reaction space formed therein, a substrate support installed in the reaction space to support a plurality of substrates, the substrate support comprising a susceptor plate, a plurality of vacuum holes formed in a top surface of the susceptor plate, and a vacuum line connecting the plurality of vacuum holes to an external pump, a gas injector comprising a plurality of gas injection units disposed radially to face the substrate support to inject process gas into the reaction space, and a controller configured to adjust a chucking force on the substrates according to a type of gas supplied through the gas injector.

Abstract: A method of forming a thin film using a substrate processing apparatus includes placing the substrate on the electrostatic chuck, depositing the thin film on the substrate, transferring the substrate, and performing a hardening process. The depositing the thin film on the substrate applies a first DC power source to chuck the substrate, supplies a process gas and applies a first RF power source to form a first plasma to deposit the thin film on the substrate. The transferring the substrate transfers the substrate on which the thin film has been deposited outside the process chamber. The performing a hardening process applies a second DC power source, supplies a purge gas, and applies a second RF power source to form the plasma to harden a deposition film formed in an interior of the process chamber.

Abstract: Disclosed herein is a method of assembling a substrate supporting apparatus, including coupling a conductive rod to an electrode installed in a substrate support provided to support a substrate, forming a sacrificial layer on the rod, bonding the rod and the electrode by melting and infiltrating a filler into a coupling area between the rod and the electrode, while forming a protective layer between the rod and the sacrificial layer by infiltrating the filler into a gap between the rod and the sacrificial layer, and coupling a shaft to the substrate support, the rod extending through the shaft.

Abstract: Disclosed is a substrate processing method including: a pressurizing operation of raising a process pressure from a first pressure (P1) to a second pressure (P2) that is greater than the atmospheric pressure; a depressurizing operation of lowering the process pressure from a sixth pressure (P6), which is greater than the atmospheric pressure, to a seventh pressure (P7); and an annealing operation of changing the process pressure into a preset pressure change pattern between the pressurizing operation and the depressurizing operation, under a temperature atmosphere of a second temperature (T2) higher than the room temperature. A temperature raising operation of raising a temperature atmosphere from a first temperature (T1) to the second temperature (T2) is performed from a preset temperature raising start point (t1) to a preset temperature raising end point (t2) while the pressurizing operation is performed or after the pressurizing operation is performed.

Abstract: The present disclosure relates to a substrate processing method, and more particularly, to a substrate processing method for improving the physical properties of a thin film formed on a substrate.

Abstract: An apparatus for processing substrates may include a process chamber, a substrate supporter and an impedance matcher. The process chamber may process a plurality of the substrates using plasma. The process chamber may include a plurality of processing spaces configured to simultaneously process the substrates. The substrate supporter may be arranged in each of the processing spaces. The substrate supporter may include a plurality of stages configured to support the substrates. The impedance matcher may be provided to the process chamber. The impedance matcher may calculate impedances under the substrate supporter in regions with where the stages in simultaneously processing the substrates. The impedance matcher may compare the calculated impedances with a reference impedance to obtain an impedance compensation value. The impedance matcher may identically match the impedances in the regions with the stages with each other using the impedance compensation value.

Abstract: A substrate processing method using a substrate processing apparatus including a process chamber having a reaction space for processing a substrate including an underlayer and a multilayer pattern provided on the underlayer and formed by alternately stacking at least a plurality of first insulating layers and a plurality of second insulating layers on one another, a substrate supporter, a gas ejector, and a plasma reactor, includes a pretreatment step for forming a passivation layer by supplying, onto the substrate through the gas ejector, a pretreatment gas, and an etching step for selectively and at least partially etching the plurality of second insulating layers in a lateral direction relative to the plurality of first insulating layers by supplying, onto the substrate through the gas ejector, an etchant.

Abstract: Provided are a method of depositing a thin film and a method of manufacturing a semiconductor device using the same, and the method of depositing a thin film uses a substrate processing apparatus including a chamber, a substrate support on which a substrate is mounted, a gas supply unit, and a power supply unit that supplies high-frequency and low-frequency power to the chamber, and includes: a step of mounting, on the substrate support, the substrate including a lower thin film deposited under the condition of a process temperature in a low temperature range; a step of depositing an upper thin film on the lower thin film under the condition of the process temperature in the low temperature range; and a step of treating a surface of the upper thin film under the condition of the process temperature in the low temperature range.

Abstract: The present invention disclosed herein relates to a substrate processing method, and more particularly, to: a substrate processing method in which a flow rate of a process gas in a depressurizing operation is regulated in a pressure changing process for improving properties of a thin film; a substrate processing apparatus using the substrate processing method; and a semiconductor manufacturing method.

Abstract: Provided is a feeding block for transferring a process gas to a process chamber, the feeding block including a body, a first annular channel provided in the body, at least one first supply channel extending from an outer surface of the body to the first annular channel to supply a first process gas to the first annular channel, and at least one first discharge channel extending from the first annular channel to an outer surface of the body to discharge the first process gas in the first annular channel to an outside, wherein the body is provided as a single member such that the first supply channel, the first annular channel, and the first discharge channel have continuous inner surfaces.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.

Abstract: A substrate processing method uses a substrate processing apparatus including a process chamber defining a processing space in the process chamber, a substrate support mounted in the process chamber to place a substrate on the substrate support, a gas sprayer for supplying a process gas onto the substrate support in the processing space, and a remote plasma generator connected to the process chamber. The method includes placing the substrate on the substrate support, continuously supplying a surface processing gas through the remote plasma generator onto the substrate, continuously supplying a purge gas onto the substrate, supplying plasma power to the remote plasma generator to activate the surface processing gas and supply the activated surface processing gas onto the substrate, and cutting off the plasma power supplied to the remote plasma generator and supplying an etching gas onto the substrate.

Abstract: The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of processing a substrate using plasma. A substrate processing apparatus includes: a process chamber having an opening in an upper portion thereof; a gas injection part coupled to the opening to define a processing space for substrate processing together with the process chamber and inject a process gas into the processing space; and a plurality of plasma generation parts disposed above the gas injection part to generate plasma and configured to radicalize the process gas so as to supply the radicalized process gas into the gas injection part, wherein one and the other of the plurality of plasma generation parts are disposed at heights different from each other from a bottom surface of the gas injection part.

Abstract: The present invention disclosed herein relates to a substrate processing apparatus and a substrate processing system having the same, and more particularly, to a substrate processing apparatus capable of simultaneously processing a large amount of substrates and a substrate processing system having the same. The present invention discloses a substrate processing apparatus including a first processing module in which substrate processing is performed on a plurality of substrates, a second processing module disposed adjacent to the first processing module to perform the substrate processing on the plurality of substrates, a first utility part disposed adjacent to a rear surface of the first processing module, a second utility part disposed adjacent to a rear surface of the second processing module, and an upper support part provided between the first utility part and the second utility part to divide the maintenance space into an upper area and a lower area.

Abstract: The present invention disclosed herein relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of performing substrate processing such as deposition, etching, and heat processing on a plurality of substrates. The present invention discloses a substrate processing apparatus including a reaction tube having a processing space, in which a plurality of substrates are accommodated to perform substrate processing, a nozzle installation part protruding outward from a portion of a side surface of the reaction tube to provide a portion of an outer surface of the reaction tube, and a plurality of gas injection nozzles disposed along a circumference of each of the substrate in a direction perpendicular to the nozzle installation part to inject a process gas into the reaction tube, wherein the nozzle installation part comprises a plurality of insertion parts corresponding to the gas injection nozzles.

Abstract: The present invention relates to a substrate processing method, and more particularly, to a processing method for substrate for removing impurities from inside a thin film of a substrate and improving characteristics of the thin film.