Abstract: A method for fabricating trihalodisilane, the method includes providing a halodisilane including at least four halogen atoms; reducing the halodisilane, using a mixed reducing agent including a first reducing agent represented by following Chemical Formula 1-1, in which RA is an alkyl group, and m and n are each independently 1 or 2, and m+n=3, and a second reducing agent represented by following Chemical Formula 2-1, in which RS is an alkyl group or an aryl group, p and q are each independently 1, 2, or 3, and p+q=4; and obtaining a product including a 1,1,1-trihalodisilane, (RA)m—Al—Hn??[Chemical Formula 1-1] (RS)p—Sn—Hq.

Abstract: The present invention relates to a ruthenium precursor compound, and more particularly, to a ruthenium precursor compound which is for providing ruthenium to an ammonia decomposition reaction catalyst and is represented by Formula CxHyOzNmRun, wherein x is an integer of 3 to 20, y is an integer of 0 to 32, z is an integer of 0 to 20, m is an integer of 0 to 10, and n is an integer of 1 to 3. In addition, the present invention relates to an ammonia reaction catalyst using the ruthenium precursor, and to a method for preparing the ammonia reaction catalyst, and provides an ammonia reaction catalyst having an excellent ammonia conversion rate at low temperatures, thereby being capable of efficient hydrogen production.

Abstract: An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C?C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.

Abstract: An etching gas mixture, a method of forming a pattern using the etching gas mixture, and a method of manufacturing an integrated circuit device using the etching gas mixture, the etching gas mixture including a C1-C3 perfluorinated alkyl hypofluorite; and a C1-C10 organosulfur compound that includes a C—S bond in the compound.

Abstract: An etching gas mixture, a method of forming a pattern using the etching gas mixture, and a method of manufacturing an integrated circuit device using the etching gas mixture, the etching gas mixture including a C1-C3 perfluorinated alkyl hypofluorite; and a C1-C10 organosulfur compound that includes a C—S bond in the compound.