Abstract: A halotrisilane preparation method may include providing a reactant that contains halotrisilane including M halogen atoms (where, M may be a natural number from 2 to 8), reducing the halotrisilane in the reactant by using a mixed reducing agent that includes a first reducing agent represented by Formula 1-1 and a second reducing agent represented by Formula 2-1, and obtaining a product that contains the reduced halotrisilane that includes N halogen atoms, where N may be a natural number from 1 to 7 and where N<M. ( R A ) a - Al - H b [ Formula ? 1 - 1 ] In Formula 1-1 above, RA may represent an alkyl group, a and b each may be either 1 or 2, and a+b=3. ( R S ) p - Sn - H q [ Formula ? 2 - 1 ] In Formula 2-1 above, RS may represent an alkyl group or an aryl group, p and q each independently may be a natural number from 1 to 3, and p+q=4.

Abstract: An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C?C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.

Abstract: An etching gas composition includes a first organofluorine compound having 3 to 6 carbon atoms, and an organosulfur compound having 1 to 4 sulfur atoms. The organosulfur compound may include a carbon-fluorine (C—F) bond, a carbon-sulfur (C—S) bond, at least one carbon-carbon double (—C?C—) bond. When the etching gas composition is used, excellent etch selectivity may be obtained, and the linearity and verticality of a pattern may be greatly increased by improving line edge roughness (LER) and line width roughness (LWR) due to an improvement in the roughness of an etched surface.

Abstract: An etching gas mixture, a method of forming a pattern using the etching gas mixture, and a method of manufacturing an integrated circuit device using the etching gas mixture, the etching gas mixture including a C1-C3 perfluorinated alkyl hypofluorite; and a C1-C10 organosulfur compound that includes a C—S bond in the compound.

Abstract: An etching gas mixture, a method of forming a pattern using the etching gas mixture, and a method of manufacturing an integrated circuit device using the etching gas mixture, the etching gas mixture including a C1-C3 perfluorinated alkyl hypofluorite; and a C1-C10 organosulfur compound that includes a C—S bond in the compound.