Patents Assigned to Worldwide Semiconductor Corp.
  • Method for programming and erasing a triple-poly split-gate flash
    Patent number: 6111788
    Abstract: A method of programming and erasing a triple-poly split-gate flash memory. The memory cell is programmed by substrate hot-electron injection and erased by the tunneling effect and an inversion layer near the drain region. Such programming/erasing procedures can achieve uniform injection with low programming current and high injection efficiency.
    Type: Grant
    Filed: August 24, 1999
    Date of Patent: August 29, 2000
    Assignee: Worldwide Semiconductor Corp.
    Inventors: Chih-Ming Chen, Min-Hwa Chi