Abstract: A method of forming a mesh plate and a display device containing the mesh plate are provided. The mesh plate includes a plurality of first portions extend in a horizontal direction and parallel to each other and a plurality of second portions extend in a vertical direction and parallel to each other. Material of each of the first portions and the second portions is independently selected from one of magnet and magnetically conductive material. The positions of the first portions and the second portions is adjusted to cross each other and thus form a plurality of open areas according to preset positions for the open areas.

Abstract: A positive-intrinsic-negative (PIN) photosensitive device is provided. A p-type semiconductor layer composed of molybdenum oxide and having valence band energy between valence band energy of an intrinsic semiconductor layer and an upper electrode is used to replace a p-type semiconductor layer used in a conventional PIN photodiode, so that the PIN photodiode may be prepared without using borane gas. More, a difference between valence band energy of the p-type semiconductor layer and the intrinsic semiconductor layer is used to transport holes located in a valence band, so that it is unnecessary to use an active layer of a thin film transistor, so that the PIN photosensitive device may be stacked on the thin film transistor to reduce aperture ratio loss of a display panel.

Abstract: A gate driver of array (GOA) circuit includes a plurality of cascaded GOA units, wherein an N-th GOA unit includes a scan control circuit, a reverse circuit, a gate signal output circuit, and a potential holding circuit. The reverse circuit is coupled to the scan control circuit. The gate signal output circuit is coupled to an Nth clock signal, the scan control circuit, and the reverse circuit. The potential holding circuit is coupled to the scan control circuit, the reverse circuit, and the gate signal output circuit.