Patents Assigned to Wuxi China Resources Huajing Microelectronic Co., Ltd.
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Publication number: 20240088273Abstract: A vertical semiconductor structure with an integrated sampling structure and a method for manufacturing the same; the vertical semiconductor structure includes a vertical-semiconductor-structure unit cell, a sampling unit cell, a control electrode, a first electrode, a second electrode, and a sampling electrode. The sampling electrode performs real-time sampling of a voltage difference between the first electrode and the second electrode; a PN junction is formed between a first/second P-type diffusion region and a second N-type base region, which forms a potential barrier blocking electron emission from the sampling electrode. Therefore, a voltage signal of the sampling electrode is input into a protection circuit, which detects whether the vertical-semiconductor-structure unit cell is desaturated when it determines that the unit cell is in the open state. Second, a sampling resistor is connected between the sampling electrode and the first electrode to ensure the stable operation of the sampling unit cell.Type: ApplicationFiled: May 20, 2022Publication date: March 14, 2024Applicant: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.Inventors: PENGFEI JIA, QIANG RUI, WEI LI
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Patent number: 11437510Abstract: The present disclosure discloses a trench MOSFET and a method of manufacturing trench MOSFET. The trench MOSFET includes a substrate, an epitaxial layer, a plurality of trenches, and body region; the substrate has a first conductivity type; the epitaxial layer has the first conductivity type; the plurality of trenches are formed in the epitaxial layer, and at least two of the plurality of trenches are communicated with each other a gate structure is provided in the trench; the body region has a second conductivity type and has a second conductivity type and is disposed among the plurality of trenches.Type: GrantFiled: December 27, 2019Date of Patent: September 6, 2022Assignee: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.Inventors: Xuan Xiao, Jun Ye, Jie Li
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Patent number: 9391182Abstract: A Trench Insulated Gate Bipolar Transistor (IGBT) and a manufacture method thereof are provided by the present invention, which belongs to the field of IGBT technical field. The manufacture method includes following steps: (1) preparing a semiconductor substrate; (2) forming an epitaxial layer grow on a first side of the semiconductor substrate by epitaxial growth; (3) preparing and forming a gate and an emitter of the Trench Insulated Gate Bipolar Transistor on a second side of the semiconductor substrate; (4) thinning the epitaxial layer to form a collector region; (5) metalizing the collector region to form a collector. The cost of the manufacture method is low and the performance of the Trench IGBT formed by the manufacture method is good.Type: GrantFiled: December 3, 2012Date of Patent: July 12, 2016Assignee: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.Inventors: Hongxiang Tang, Yongsheng Sun, Jianxin Ji, Weiqing Ma
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Patent number: 9356213Abstract: A manufacturing method of a light-emitting diode device. The light-emitting diode device comprises: a substrate (1); an epitaxial layer at one side of the substrate (1) and comprising an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further comprises an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.Type: GrantFiled: September 23, 2015Date of Patent: May 31, 2016Assignee: WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.Inventors: Lei Wang, Guoqi Li, Zhiyan Yu, Rongsheng Pu
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Patent number: 9172002Abstract: A light-emitting diode device and a manufacturing method thereof. The light-emitting diode device includes: a substrate (1); an epitaxial layer at one side of the substrate (1) and including an N-type layer (2), a P-type layer (4), and an active layer (3) between the N-type layer (2) and the P-type layer (4); an N-type electrode (5); a P-type electrode (7); an adhesive layer (8); and a patterned substrate (9). The light-emitting diode device further includes an insulating layer (6) between the N-type electrode (5) and the P-type electrode (7), the insulating layer (6) electrically insulating the N-type electrode (5) and the P-type electrode (7). In the light-emitting diode device and the manufacturing method thereof, light-emitting efficiency and luminous efficiency of the light-emitting diode device can be improved, wiring is easier as compared with conventional chips, and the manufacturing process can be optimized.Type: GrantFiled: December 3, 2012Date of Patent: October 27, 2015Assignee: Wuxi China Resources Huajing Microelectronic Co., Ltd.Inventors: Lei Wang, Guoqi Li, Zhiyan Yu, Rongsheng Pu
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Publication number: 20140322900Abstract: A low-pressure chemical vapor deposition (LPCVD) apparatus and a thin-film deposition method thereof The apparatus comprises a reaction furnace, having reaction gas input pipelines respectively arranged at a furnace opening part and a furnace tail part. During thin film deposition, each reaction gas is synchronously introduced into the reaction furnace through the input pipeline at the furnace opening part and the input pipeline at the furnace tail part.Type: ApplicationFiled: December 3, 2012Publication date: October 30, 2014Applicant: Wuxi China Resources Huajing Microelectronics Co., LtdInventors: Xunhui Wang, Xiao Wu, Qijun Guo, Jianchao Fan