Abstract: A microelectronic device comprises: a first electrode; a second electrode located vertically below said first electrode and separated by a dielectric material; and a connection wire electrically connected to said second electrode; wherein said first electrode comprises a notch located vertically above said connection wire.
Abstract: We disclose herein a high voltage device comprising: a first electrode; a second electrode disposed underneath and spaced from the first electrode; and a dielectric layer disposed between the first and second electrodes, wherein the first electrode extends further in at least one lateral direction in respect of the second electrode.