Patents Assigned to X-FAB DRESDENT GMBH & CO. KG
  • Patent number: 11923445
    Abstract: A semiconductor contact structure including a two-dimensional electron gas (2DEG) between a first and a second semiconductor layer and a silicon implant extending into at least a part of the first semiconductor layer and into at least a part of the second semiconductor layer and connected to the 2DEG along an interface between the 2DEG and the silicon implant, wherein the interface has a nonlinear shape. The structure further includes a contact connected to the 2DEG via the silicon implant.
    Type: Grant
    Filed: April 22, 2021
    Date of Patent: March 5, 2024
    Assignee: X-FAB DRESDENT GMBH & CO. KG
    Inventor: Victor Sizov