Abstract: A semiconductor contact structure including a two-dimensional electron gas (2DEG) between a first and a second semiconductor layer and a silicon implant extending into at least a part of the first semiconductor layer and into at least a part of the second semiconductor layer and connected to the 2DEG along an interface between the 2DEG and the silicon implant, wherein the interface has a nonlinear shape. The structure further includes a contact connected to the 2DEG via the silicon implant.