Abstract: In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber 107 from which the atmosphere inside is evacuated. Etching gas is input into the main chamber 107 for a first period of time. Thereafter, the etching gas is evacuated from the main chamber 107 and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber 107. Desirably, the steps of inputting the etching gas into the main chamber 107 for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber 107 for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.

Abstract: In a method and system for vapor etching, a material to be etched and an etch resistant material are placed into an etching chamber. Thereafter, a pressure in the etching chamber is adjusted to a desired pressure and the substrate is exposed to an etching gas and a gas that comprises oxygen. The exposure substantially selectively etches the material to be etched while substantially avoiding the etching of the etch resistant material.

Abstract: In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.

Abstract: In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched.

Abstract: In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.

Abstract: In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber 107 from which the atmosphere inside is evacuated. Etching gas is input into the main chamber 107 for a first period of time. Thereafter, the etching gas is evacuated from the main chamber 107 and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber 107. Desirably, the steps of inputting the etching gas into the main chamber 107 for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber 107 for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.

Abstract: In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber (107) from which the atmosphere inside is evacuated. Etching gas is input into the main chamber (107) for a first period of time. Thereafter, the etching gas is evacuated from the main chamber (107) and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber (107). Desirably, the steps of inputting the etching gas into the main chamber (107) for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber (107) for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.

Abstract: In an apparatus for etching a semiconductor wafer or sample (101), the semiconductor wafer or sample is placed on a sample holder (104) disposed in a first chamber (103). The combination of the semiconductor wafer or sample and the sample holder is enclosed within a second chamber (130) inside the first chamber. Gas is evacuated from the second chamber and an etching gas is introduced into the second chamber, but not into the first chamber, to etch the semiconductor wafer or sample.

Abstract: In a system and method of etching a sample disposed in an etching chamber, a plurality of separately stored charges of an etching gas is discharged, one at a time, into a sample etching chamber. The discharge of each charge of etching gas occurs such that a momentary overlap exists in the end discharge of one charge of etching gas with the beginning discharge of another charge of etching gas, whereupon the desired flow of etching gas into the etching chamber is maintained. During discharge of one charge of etching gas, a previously discharged charge of etching gas is recharged. The process of discharging a plurality of separately stored charges of an etching gas, one at a time, and recharging at least one previously discharged charges of etching gas during the discharge of at least one charge of etching gas continues until the sample is etched to a desired extent.

Abstract: In an apparatus and method of vapor etching, a sample (S) to be etched is located in a main chamber (107) from which the atmosphere inside is evacuated. Etching gas is input into the main chamber (107) for a first period of time. Thereafter, the etching gas is evacuated from the main chamber (107) and cooling/purging gas is input into the main chamber for a second interval of time. Thereafter, the cooling/purging gas is evacuated from the main chamber (107). Desirably, the steps of inputting the etching gas into the main chamber (107) for the first period of time, evacuating the etching gas from the main chamber, inputting the cooling/purging gas into the main chamber (107) for the second period of time, and evacuating the cooling/purging gas from the main chamber are repeated until samples have been etched to a desired extent.

Abstract: An etching apparatus for etching semi combustion samples may include one or more variable volume expansion chambers, two or more fixed volume expansion chambers, or combinations thereof in fluid communication with an etching chamber and a source of etching gas, such as xenon difluoride. The apparatus may further include a source of a mixing gas. An etching apparatus may also include a source of etching gas, an etching chamber in fluid communication with the source of etching gas, a flow controller connected between the source of etching gas and the etching chamber, and a vacuum pump in fluid communication with the etching chamber. A source for providing a gas by sublimation from a solid material is also provided, including a vacuum tight container and a mesh mounted in the interior of the vacuum tight container, wherein the mesh is adapted to receive and restrain the solid material.

Abstract: This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.

Abstract: This invention relates to the construction of microfabricated devices and, in particular, to types of microfabricated devices requiring thermal isolation from the substrates upon which they are built. This invention discloses vertical thermal isolators and methods of fabricating the vertical thermal isolators. Vertical thermal isolators offer an advantage over thermal isolators of the prior art, which were substantially horizontal in nature, in that less wafer real estate is required for the use of the vertical thermal isolators, thereby allowing a greater density per unit area of the microfabricated devices.