Abstract: A memory and an electronic device are provided in the present application. The memory includes a bank. The bank includes two planes. Each of the two planes includes a plurality of memory resources and a plurality of redundant replacement resources. A bad memory resource of one of the two planes is capable of being replaced by the redundant replacement resource of an other of the two planes for performing a normal Read/Write operation. A first priority level of replacing the bad memory resource in the one of the two planes by the redundant replacement resource in a same plane is greater than a second priority level of replacing the bad memory resource by the redundant replacement resource in a different plane of the two planes.

Abstract: A memory and an electronic device are provided in the present application. The memory includes a bank. The bank includes two planes. Each of the two planes includes a plurality of memory resources and a plurality of redundant replacement resources. A bad memory resource of one of the two planes is capable of being replaced by the redundant replacement resource of the other of the two planes for performing a normal Read/Write operation. By the above-mentioned way, the redundant replacement resources in different planes are capable of being shared, thereby improving the flexibility of redundancy and the yield of the memory.