Patents Assigned to Xenergic AB
  • SRAM architecture
    Patent number: 10304525
    Abstract: The present invention relates generally to the field of semiconductor memories and in particular to memory cells comprising a static random access memory (SRAM) bitcell (100). Leakage current in the read path is reduced by connecting a read access transistor terminal either to GND or VDD during read access or write access and idle state. The SKAM cell inverters may be asymmetrical in size. The memory may comp rise various boost circuits to allow low voltage operation or application of distinguished supply voltages.
    Type: Grant
    Filed: September 17, 2015
    Date of Patent: May 28, 2019
    Assignee: Xenergic AB
    Inventors: Babak Mohammadi, Joachim Neves Rodrigues
  • NEW SRAM ARCHITECTURE
    Publication number: 20180254081
    Abstract: The present invention relates generally to the field of semiconductor memories and in particular to memory cells comprising a static random access memory (SRAM) bitcell (100). Leakage current in the read path is reduced by connecting a read access transistor terminal either to GND or VDD during read access or write access and idle state. The SKAM cell inverters may be asymmetrical in size. The memory may comp rise various boost circuits to allow low voltage operation or application of distinguished supply voltages.
    Type: Application
    Filed: September 17, 2015
    Publication date: September 6, 2018
    Applicant: Xenergic AB
    Inventors: Babak MOHAMMADI, Joachim NEVES RODRIGUES