Abstract: A filtration apparatus is provided. The filtration apparatus includes a housing and a plurality of filtering sheets. The housing is enclosed by a first end cap and a second end cap. The first end cap includes a liquid inlet, and the second end cap includes a liquid outlet. The plurality of filtering sheets is disposed on an internal sidewall of the housing. A portion of the filtering sheets interlaces with another portion of the filtering sheets to form a winding flow path in the housing.

Abstract: The present disclosure provides an exhaust module for exhausting an exhaust from at least one wafer baking apparatus having an exhaust port. The exhaust module includes at least one pipeline, a heating unit, a solvent dispensing unit, and a filtering unit. The at least one pipeline is connected to the exhaust port of the wafer baking apparatus and configured to exhaust the exhaust gas from the wafer baking apparatus. The heating unit is connected to the pipeline and configured to heat the exhaust gas. The solvent dispensing unit is connected to the heating unit and configured to dispense a solvent to cool and dissolve the exhaust gas. The filtering unit is connected to the solvent dispensing unit and configured to filter the solvent.

Abstract: A method for fabricating a semiconductor device, including the steps of: providing a substrate having an etch stop layer formed thereon; forming a preliminary stacked structure on the etch stop layer, the preliminary stacked structure including a lower sacrifice layer contacting the etch stop layer, a support layer, and an upper sacrifice layer; forming a hole penetrating the preliminary stacked structure and the etch stop layer; forming a conductive pattern in the hole; removing the upper sacrifice layer and a portion of the support layer; removing the lower sacrifice layer; forming a first conductive layer covering the conductive pattern; and forming a dielectric layer covering the first conductive layer, a remaining portion of the support layer, and the etch stop layer.

Abstract: A fluid preparation system includes a tank, a chemical supply line, a mixer, and a deionized (DI) water supply line. The tank contains a first chemical solution. The chemical supply line is coupled to the tank and configured to supply the first chemical solution. The mixer is coupled to the tank. The DI water supply line is coupled to the mixer and configured to supply DI water. The first chemicals solution and the DI water are mixed at the mixer to generate a second chemical solution.

Abstract: The present disclosure provides a retaining ring for polishing a wafer by a slurry. The retaining ring includes a ring-shaped main body and a plurality of guiding elements. The main body has an outer surface, an inner surface, and an inner space for accommodating the wafer. The main body includes a plurality of channels configured to allow the slurry to flow into the inner space from the outer surface. The plurality of guiding elements is disposed at the outer surface of the main body with respect to the plurality of channels. Each of the guiding elements forms a slurry capture area with the main body to guide the slurry towards each of the respective channels.

Abstract: The present disclosure provides a composition for manufacturing a polyurethane polishing pad. The composition includes 15 to 25 wt % of MBCA, 25 to 45 wt % of isocyanates, 15 to 45 wt % of polyols, 5 to 35 wt % of EOPO, and 1 to 5 wt % of additives. The polyurethane polishing pad made from the composition of the present disclosure has a hardness within a range of 40 to 70 shore D, an elongation within a range of 200 to 400%, a density within a range of 0.7 to 0.9 g/cc, a modulus within a range of 25000 to 40000 kg/cm2, and a tensile stress within a range of 120 to 320 kg/cm2.

Abstract: A device for maintaining cleanliness in a vacuum environment during semiconductor manufacture in a device storing and transferring wafers into etching and other manufacturing processes includes a transferring chamber storing wafers, a vacuum system to extract particles from the transferring chamber, and a thermoelectric device for temperature control. The vacuum system includes an extracting pipe, the thermoelectric device includes a cooling apparatus to cool the transferring chamber, and a monitoring device to detect particle concentrations in the transferring chamber. The cooling apparatus includes Peltier elements arranged on the extracting pipe to cool and thus cause the descent of fumes and particles towards a low-set extraction area.

Abstract: A stocker for holding a plurality of reticle pods is provided. Each of the reticle pods is configured to accommodate a reticle assembly. The reticle assembly includes a reticle and a pellicle covering the reticle. The stocker includes a main frame and an electrostatic generator. The main frame has an inner space and at least one pod support disposed in the inner space. The pod support divides the inner space into a plurality of chambers configured to respectively accommodate the plurality of reticle pods. The electrostatic generator is coupled to the reticle assembly and configured to generate static electricity to the reticle assembly. The static electricity alternates between positive electricity and negative electricity.

Abstract: A semiconductor structure and a method of fabricating the same is disclosed. The semiconductor device includes a conductive structure that comprises: an upper conductive line arranged above and in electrical connection with a circuit component in a lower device layer through a via plug, wherein the upper conductive line extends laterally over the via plug; an interposing layer having a substantially uniform thickness arranged between the via plug and the upper conductive line, and extending laterally beyond a planar projection of the via plug, wherein the upper conductive line is in electrical connection with the via plug through the interposing layer; and an overlayer is disposed over the upper conductive line.

Abstract: A method for fabricating a semiconductor device, including the steps of: providing a substrate having an etch stop layer formed thereon; forming a preliminary stacked structure on the etch stop layer, the preliminary stacked structure including a lower sacrifice layer contacting the etch stop layer, a support layer, and an upper sacrifice layer; forming a hole penetrating the preliminary stacked structure and the etch stop layer; forming a conductive pattern in the hole; removing the upper sacrifice layer and a portion of the support layer; removing the lower sacrifice layer; forming a first conductive layer covering the conductive pattern; and forming a dielectric layer covering the first conductive layer, a remaining portion of the support layer, and the etch stop layer.

Abstract: A method for fabricating a semiconductor device, including the steps of: providing a substrate comprising a preliminary pattern formed thereon; forming an opening through the preliminary pattern to expose a conductive portion in the substrate; forming a spacer on a sidewall of the opening; performing a wet etching process to form a hole in the conductive portion; removing the spacer; and depositing a conductive pattern over the sidewall of the opening and a surface of the hole.

Abstract: The present disclosure is directed to a polishing head for polishing a wafer by a slurry. The polishing head includes a main body and at least two air modules. The main body has a cavity for accommodating the wafer, a main channel, and at least two sub-channels connected to the main channel. The at least two air modules are disposed at an outer surface of the main body. Each of the air modules is respectively connected to one of the sub-channels of the main body and configured to generate an air stream. When the polishing head rotates, the air stream forms an air curtain around the outer surface of the main body.

Abstract: The instant disclosure includes an alignment system. The alignment system includes a first set of alignment marks, a second set of alignment marks, and a third set of alignment marks. The first, second and third alignment marks correspondingly includes a plurality of segments separated into groups. Each of the group being symmetric to a respective other group. The third set of alignment marks are diagonal to the first set of alignment marks and the second set of alignment marks.

Abstract: The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is heated by a heating unit disposed in the bake plate. In action S403, the wafer is placed on the bake plate of the heating apparatus. In action S404, the electromagnetic wave generator generates an electromagnetic wave to heat the SOC film. The electromagnetic wave generated by the electromagnetic wave generator has a frequency within a range of 1 THz to 100 THz. In action S405, the wafer is removed from the bake plate of the heating apparatus.

Abstract: An apparatus for processing a substrate is provided. The apparatus comprises a processing chamber and a showerhead. The showerhead is in the processing chamber and has a plurality of first holes with a first size in a first zone of the showerhead, a plurality of second holes with a second hole size in a second zone of the showerhead, and a plurality of third holes with a third hole size in a third zone of the showerhead. The first hole size is different from the second hole size. The first zone is surrounded by the second zone. An area of the first zone is larger than an area of the second zone. The first hole size is different from the third hole size. The first zone is surrounded by the third zone, and an area of the first zone is larger than an area of the third zone.

Abstract: A vertical wafer boat for a diffusion process is provided. The vertical wafer boat includes a plurality of wafer racks. Each of the plurality of wafer racks includes a vertical support member and a plurality of wafer support arms. The plurality of wafer support arms extends from a sidewall of the vertical support member. Each of the wafer support arms includes a support body and a ledge. The support body is located between the vertical support member and the ledge. Centers of the support body and the ledge are horizontally aligned. A vertical thickness of the ledge is smaller than a vertical thickness of the support body.

Abstract: The present disclosure provides a roller for cleaning a backside of a wafer. The backside of the wafer has a central region and a periphery region surrounding the central region. The roller includes an upper element, a bottom element, and an axis element for connecting the upper element and the bottom element. The upper element of the roller is configured to contact with a frontside of the wafer. The bottom element is configured to contact with the backside of the wafer and remove particles from the periphery region of the backside of the wafer. The bottom element is made of materials selected from a group comprising abrasive pads, sand papers, and asbestos.

Abstract: The present disclosure provides a method of heating a spin on coating (SOC) film on a wafer. The method includes actions S401 to S405. In action S401, a heating apparatus is provided. The heating apparatus includes a bake plate and an electromagnetic wave generator. In action S402, the bake plate is heated by a heating unit disposed in the bake plate. In action S403, the wafer is placed on the bake plate of the heating apparatus. In action S404, the electromagnetic wave generator generates an electromagnetic wave to heat the SOC film. The electromagnetic wave generated by the electromagnetic wave generator has a frequency within a range of 1 THz to 100 THz. In action S405, the wafer is removed from the bake plate of the heating apparatus.

Abstract: A chamber apparatus comprises a lower and an upper chamber body, and a gasket member. The lower chamber body defines a receiving region and a first receiving groove. The upper chamber body disposed above the lower chamber body and defines a second receiving groove projectively align to the first receiving groove. The second receiving groove is configured to establish sealing coupling with the lower chamber body so as to form a chamber enclosure region. The gasket member includes a conductive member and an elastomeric member. The conductive member configured to laterally surround the receiving region and respectively fit into the lower chamber body and the upper chamber body. The elastomeric member is protruded from the conductive member and extended toward the receiving region, configured to be compressed by the upper and the lower chamber body so as to seal the chamber enclosure region.

Abstract: A semiconductor structure and a method of fabricating the same are disclosed. The semiconductor device comprises: a first active region over a substrate; and a first bit line structure intercepting the first active region at a level that is lower than a top-most surface thereof, the first bit line structure including a barrier liner having a U-profile in a width direction thereof in electrical contact with the first active region.