Patents Assigned to XIAMEN FARATRONIC CO., LTD.
  • Patent number: 9281122
    Abstract: An electrode structure of a laminated metallization film capacitor includes at least two laminated metallization films. Each metallization film is further disposed with a plurality of metal-uncoated curved gap strips with a certain width on the plane of section of the laminated metallization film capacitor core to separate two adjacent metal coating units partially or totally. A center of the curved gas strip is concaved with a notch. Both sides of the notch form like misaligned shoulders. A projection forms opposite to the open of the notch; in two adjacent curve gap strips. An extreme point of the projection of one curve gap strip is disposed inside the notch of the other one in any event.
    Type: Grant
    Filed: August 15, 2012
    Date of Patent: March 8, 2016
    Assignee: XIAMEN FARATRONIC CO., LTD.
    Inventors: Jian Zhu, Jintao Lin, Guobin Chen
  • Publication number: 20140301019
    Abstract: An electrode structure of a laminated metallization film capacitor includes at least two laminated metallization films. Each metallization film is further disposed with a plurality of metal-uncoated curved gap strips with a certain width on the plane of section of the laminated metallization film capacitor core to separate two adjacent metal coating units partially or totally. A center of the curved gas strip is concaved with a notch. Both sides of the notch form like misaligned shoulders. A projection forms opposite to the open of the notch; in two adjacent curve gap strips. An extreme point of the projection of one curve gap strip is disposed inside the notch of the other one in any event.
    Type: Application
    Filed: December 7, 2012
    Publication date: October 9, 2014
    Applicant: XIAMEN FARATRONIC CO., LTD.
    Inventors: Jian Zhu, Jintao Lin, Guobin Chen